DMG3413L_15 [DIODES]
20V P-CHANNEL ENHANCEMENT MODE MOSFET;型号: | DMG3413L_15 |
厂家: | DIODES INCORPORATED |
描述: | 20V P-CHANNEL ENHANCEMENT MODE MOSFET |
文件: | 总6页 (文件大小:184K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
DMG3413L
20V P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features and Benefits
Low On-Resistance
ID
V(BR)DSS
RDS(on) max
TA = +25°C
Low Input Capacitance
Fast Switching Speed
3.0A
2.5A
95mΩ @ VGS = -4.5V
130mΩ @ VGS = -2.5V
-20V
Low Input/Output Leakage
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 standards for High Reliability
Description
This new generation MOSFET has been designed to minimize the on-
state resistance (RDS(ON) and yet maintain superior switching
)
Mechanical Data
performance, making it ideal for high efficiency power management
applications.
Case: SOT23
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram
Applications
DC-DC Converters
Power Management Functions
Analog Switch
Terminals: Finish – Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.0072 grams (approximate)
Drain
SOT23
D
Gate
S
G
Source
Top View
Pin Configuration
Internal Schematic
Ordering Information (Note 4)
Part Number
Case
Packaging
DMG3413L-7
SOT23
3,000/Tape & Reel
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
G33 = Marking Code
YM = Date Code Marking for SAT (Shanghai Assembly/ Test site)
G33
G33
= Date Code Marking for CAT (Chengdu Assembly/ Test site)
YM
Y or = Year (ex: A = 2013)
Y
M = Month (ex: 9 = September)
Chengdu A/T Site
Shanghai A/T Site
Date Code Key
Year
2010
2011
2012
2013
2014
2015
2016
2017
2018
Code
X
Y
Z
A
B
C
D
E
F
Month
Code
Jan
1
Feb
2
Mar
3
Apr
4
May
5
Jun
6
Jul
7
Aug
8
Sep
9
Oct
O
Nov
N
Dec
D
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September 2013
© Diodes Incorporated
DMG3413L
Document number: DS35051 Rev. 4 - 2
DMG3413L
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Units
Total Power Dissipation (Note 5)
0.7
184
115
W
PD
Steady State
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
°C/W
W
RθJA
PD
t<10s
1.3
Steady State
t<10s
94
61
25
Thermal Resistance, Junction to Ambient (Note 6)
RθJA
°C/W
°C
Thermal Resistance, Junction to Case
RθJC
Operating and Storage Temperature Range
-55 to +150
T
J, TSTG
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Symbol
VDSS
Value
-20
Units
V
V
Gate-Source Voltage
VGSS
8
T
T
A = +25°C
A = +70°C
Steady
State
3.0
2.4
A
A
A
A
ID
ID
ID
ID
Continuous Drain Current (Note 6) VGS = -4.5V
Continuous Drain Current (Note 6) VGS = -2.5V
TA = +25°C
TA = +70°C
3.7
2.9
t<10s
T
T
A = +25°C
A = +70°C
Steady
State
2.5
2.0
TA = +25°C
TA = +70°C
3.2
2.5
t<10s
Maximum Continuous Body Diode Forward Current (Note 6)
Pulsed Drain Current (10µs pulse, duty cycle = 1%)
1.9
20
A
A
IS
IDM
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
Symbol
Min
Typ
Max
Unit
Test Condition
—
—
—
-20
—
—
V
BVDSS
IDSS
VGS = 0V, ID = -250µA
VDS = -16V, VGS = 0V
VGS = 8V, VDS = 0V
-1.0
±100
µA
nA
—
IGSS
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
-0.6
—
-0.55
73
-1.3
95
V
VGS(th)
VDS = VGS, ID = -250µA
V
GS = -4.5V, ID = -3.0A
Static Drain-Source On-Resistance
95
130
190
-
mΩ
RDS(ON)
VGS = -2.5V, ID = -2.6A
VGS = -1.8V, ID = -1A
VDS = -5V, ID = -3A
VGS = 0V, IS = -1A
146
8
—
—
Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
S
V
|Yfs|
VSD
-0.8
-1.25
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
857
54
pF
pF
pF
Ω
Ciss
Coss
Crss
Rg
VDS = -10V, VGS = 0V
f = 1.0MHz
Output Capacitance
Reverse Transfer Capacitance
Gate Resistnace
49
12.3
9.0
VDS = 0V, VGS = 0V, f = 1.0MHz
VGS = -4.5V, VDS = -15V, ID = -4A
Total Gate Charge
nC
nC
nC
ns
ns
ns
ns
Qg
Gate-Source Charge
Gate-Drain Charge
1.6
Qgs
Qgd
tD(on)
tr
1.1
Turn-On Delay Time
9.7
Turn-On Rise Time
17.7
268.8
64.2
VDS = -15V, VGS = -10V,
RL = 15, RG = 6.0ID = -1A
Turn-Off Delay Time
tD(off)
tf
Turn-Off Fall Time
Notes:
5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1inch square copper plate
7 .Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.
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© Diodes Incorporated
DMG3413L
Document number: DS35051 Rev. 4 - 2
DMG3413L
8
6
12
10
-V
= 10V
GS
-V
= 4.5V
GS
V
= -5.0V
DS
-V = 4.0V
GS
-V = 3.5V
GS
-V = 3.0V
GS
8
6
4
-V = 2.5V
GS
-V = 2.0V
GS
4
2
0
T
= 150C
A
T
= 85C
A
2
0
T
= 125
C
A
T
= 25C
A
-V = 1.5V
GS
T
= -55C
A
0
0.5
1.0
1.5
2.0
2.5
3.0
0
1
2
3
4
5
-VDS, DRAIN -SOURCE VOLTAGE(V)
-VGS, GATE-SOURCE VOLTAGE (V)
Fig. 1 Typical Output Characteristics
Fig. 2 Typical Transfer Characteristics
0.20
0.16
0.14
0.12
V
= -4.5V
GS
0.10
0.08
0.06
0.04
T
= 150C
A
0.12
0.08
0.04
T
= 125C
A
T
= 85C
A
T
= 25C
A
T
= -55C
A
0.02
0
0
0
2
4
6
8
10
0
2
4
6
8
10
12
-ID, DRAIN SOURCE CURRENT
-ID, DRAIN SOURCE CURRENT (A)
Fig. 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
Fig. 4 Typical On-Resistance vs.
Drain Current and Temperature
1.6
1.4
1.2
0.20
0.16
-V
= 2.5V
GS
-I = 3.0A
D
0.12
0.08
-V
= 4.5V
GS
1.0
0.8
0.6
-I = 5A
D
0.04
0
-50 -25
TJ, JUNCTION TEMPERATURE (
Fig. 6 On-Resistance Variation with Temperature
0
25
50
75 100 125 150
-50 -25
TJ, JUNCTION TEMPERATURE (
Fig. 5 On-Resistance Variation with Temperature
0
25
50
75 100 125 150
C)
C)
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DMG3413L
Document number: DS35051 Rev. 4 - 2
DMG3413L
1.6
1.2
12
10
8
6
4
0.8
0.4
0
2
0
-50 -25
0
25
TA, AMBIENT TEMPERATURE (°C)
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
50
75 100 125 150
0
0.2
0.4
0.6
0.8
1
1.2
1.4
-VSD, SOURCE-DRAIN VOLTAGE (V)
Fig. 8 Diode Forward Voltage vs. Current
10,000
10
8
f = 1MHz
1,000
C
iss
6
4
2
0
100
10
C
oss
C
rss
0
5
10
15
20
0
5
10
15
20
25
30
Qg, TOTAL GATE CHARGE (nC)
-VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 10 Gate-Charge Characteristics
Fig. 9 Typical Junction Capacitance
100
10
400
350
Single Pulse
R
R
T
= 176
= R
C/W
JA
P
= 10µs
W
* r
R
JA(t)
JA
(t)
DS(on)
-T = P * R
J
A
JA(t)
Limited
300
250
200
1
DC
P
= 10s
W
P
= 1s
150
100
W
P
= 100ms
W
P
= 10ms
W
0.1
TJ(max) = 150°C
TA = 25°C
P
= 1ms
W
P
= 100µs
W
VGS = -8V
Single Pulse
DUT on 1 * MRP Board
50
0
0.01
0.00001
0.001
0.1
10
1,000
0.1
1
10
100
t1, PULSE DURATION TIME (sec)
-VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 11 Single Pulse Maximum Power Dissipation
Fig. 12 SOA, Safe Operation Area
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DMG3413L
Document number: DS35051 Rev. 4 - 2
DMG3413L
1
D = 0.9
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.1
D = 0.05
D = 0.02
D = 0.01
D = 0.005
0.01
R
R
(t)=r(t) * R
JA
=176°C/W
JA
JA
Duty Cycle, D=t1/ t2
Single Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1,000
t1, PULSE DURATION TIMES (sec)
Fig. 13 Transient Thermal Resistance
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version.
SOT23
A
Dim
Min
Max
0.51
1.40
2.50
1.03 0.915
0.60 0.535
Typ
0.40
1.30
2.40
A
B
C
D
F
G
H
J
K
K1
L
M
0.37
1.20
2.30
0.89
0.45
1.78
2.80
0.013 0.10
0.903 1.10
-
C
B
2.05
3.00
1.83
2.90
0.05
1.00
0.400
0.55
0.11
-
H
G
M
K
J
K1
-
D
F
0.45
0.085 0.18
0° 8°
0.61
L
All Dimensions in mm
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
Dimensions Value (in mm)
Y
Z
X
Y
C
E
2.9
0.8
0.9
2.0
1.35
Z
C
E
X
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DMG3413L
Document number: DS35051 Rev. 4 - 2
DMG3413L
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
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final and determinative format released by Diodes Incorporated.
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Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
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use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
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Copyright © 2013, Diodes Incorporated
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© Diodes Incorporated
DMG3413L
Document number: DS35051 Rev. 4 - 2
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