DMG4406LSS [DIODES]
This MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.; 该MOSFET的设计，以最大限度地减少通态电阻（ RDS （ ON） ），并同时保持出色的开关性能，使其成为理想的高效率电源管理应用。
| 型号： | DMG4406LSS |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | This MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. |
| 文件： | 总6页 (文件大小：232K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DMG4406LSS
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features and Benefits
•
100% Unclamped Inductive Switch (UIS) test in production
ID max
V(BR)DSS
RDS(ON) max
•
•
•
•
•
•
Low On-Resistance
Low Input Capacitance
Fast Switching Speed
Lead Free By Design/RoHS Compliant (Note 1)
"Green" Device, Halogan and Antimony Free (Note 2)
Qualified to AEC-Q101 standards for High Reliability
TA = 25°C
11mΩ @ VGS = 10V
15mΩ @ VGS = 4.5V
10.3A
9.3A
30V
Description and Applications
This MOSFET has been designed to minimize the on-state resistance
(RDS(on)) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
Mechanical Data
•
•
Case: SO-8
Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
•
•
•
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections Indicator: See diagram
Terminals: Finish ⎯ Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
•
•
•
Backlighting
Power Management Functions
DC-DC Converters
•
Weight: 0.008 grams (approximate)
SO-8
S
D
S
S
G
D
D
D
Top View
Top View
Internal Schematic
Ordering Information (Note 3)
Part Number
Case
Packaging
DMG4406LSS-13
SO-8
2500/Tape & Reel
Notes:
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. No purposely added lead. Halogen and Antimony free.
2. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com.
3. For packaging details, go to our website at http://www.diodes.com.
Marking Information
Top View
8
5
Logo
G4406LS
YY WW
Part no.
Xth week: 01 ~ 53
Year: “11” = 2011
1
4
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© Diodes Incorporated
DMG4406LSS
Document number: DS35539 Rev. 7 - 2
DMG4406LSS
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Drain-Source Voltage
Symbol
VDSS
Value
30
Units
V
V
Gate-Source Voltage
±20
VGSS
T
A = 25°C
Steady
State
10.3
8.3
A
A
A
A
ID
ID
ID
ID
TA = 70°C
Continuous Drain Current (Note 5) VGS = 10V
Continuous Drain Current (Note 5) VGS = 4.5V
TA = 25°C
TA = 70°C
TA = 25°C
TA = 70°C
13.4
10.6
t<10s
Steady
State
9.3
7.3
TA = 25°C
TA = 70°C
12.0
9.5
t<10s
Maximum Continuous Body Diode Forward Current (Note 5)
Pulsed Drain Current (10μs pulse, duty cycle = 1%)
Avalanche Current (Note 6) L = 0.1mH
2.5
90
22
24
A
A
IS
IDM
IAR
EAR
A
Repetitive Avalanche Energy (Note 6) L = 0.1mH
mJ
Thermal Characteristics @TA = 25°C unless otherwise specified
Characteristic
Symbol
PD
Value
1.5
80
48
2.0
61
Units
W
°C/W
°C/W
W
°C/W
°C/W
°C/W
Total Power Dissipation (Note 4)
Steady State
Thermal Resistance, Junction to Ambient (Note 4)
t<10s
Rθ
JA
Total Power Dissipation (Note 5)
PD
Steady State
Thermal Resistance, Junction to Ambient (Note 5)
t<10s
Thermal Resistance, Junction to Case
Rθ
JA
37
6.4
Rθ
JC
Operating and Storage Temperature Range
-55 to 150
°C
TJ, TSTG
Electrical Characteristics TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
Symbol
Min
Typ
Max
Unit
Test Condition
30
-
-
-
-
-
1
V
BVDSS
IDSS
VGS = 0V, ID = 250μA
μA
nA
VDS = 30V, VGS = 0V
VGS = ±20V, VDS = 0V
-
±100
IGSS
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
1.4
-
8
2.0
11
15
-
V
VGS(th)
VDS = VGS, ID = 250μA
-
-
-
-
VGS = 10V, ID = 12A
mΩ
Static Drain-Source On-Resistance
RDS (ON)
12
32
0.70
V
GS = 4.5V, ID = 10A
Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
S
V
|Yfs|
VSD
VDS = 5V, ID = 12A
VGS = 0V, IS = 1A
1.0
-
-
-
-
-
-
-
-
-
-
-
-
-
-
1281
145
125
1.2
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Ciss
Coss
Crss
Rg
V
DS = 15V, VGS = 0V,
Output Capacitance
pF
f = 1.0MHz
Reverse Transfer Capacitance
Gate resistance
Ω
VDS = 0V, VGS = 0V, f = 1.0MHz
12.5
26.7
3.6
Total Gate Charge (VGS = 4.5V)
Total Gate Charge (VGS = 10V)
Gate-Source Charge
Qg
Qg
nC
ns
V
V
DS = 15V, ID = 12A
Qgs
Qgd
tD(on)
tr
Gate-Drain Charge
4.4
Turn-On Delay Time
5.2
Turn-On Rise Time
21.2
22.3
5.1
DD = 15V, VGS = 10V,
Turn-Off Delay Time
RL = 1.25ꢀ, RG = 3ꢀ,
tD(off)
tf
Turn-Off Fall Time
Reverse Recovery Time
Reverse Recovery Charge
8.5
ns
trr
IF=12A, di/dt=500A/us
7.0
nC
Qrr
Notes:
4. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
6. IAR and EAR rating are based on low frequency and duty cycles to keep TJ = 25°C
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
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© Diodes Incorporated
DMG4406LSS
Document number: DS35539 Rev. 7 - 2
DMG4406LSS
30
25
30
25
V
= 10V
GS
V
= 5.0V
DS
V
= 4.5V
GS
V
= 4.0V
GS
20
15
10
20
15
10
V
= 3.5V
GS
V
= 3.0V
GS
T
= 150°C
A
T
= 125°C
A
T
= 85°C
A
5
0
5
0
V
= 2.5V
GS
T
= 25°C
A
T
= -55°C
A
0
1
2
3
4
0
0.5
1.0
1.5
2.0
VGS, GATE-SOURCE VOLTAGE (V)
VDS, DRAIN -SOURCE VOLTAGE(V)
Fig. 1 Typical Output Characteristics
Fig. 2 Typical Transfer Characteristics
0.04
0.03
0.04
0.03
V
= 4.5V
GS
T
= 125°C
T
= 150°C
A
0.02
0.01
0
0.02
0.01
0
A
T
= 85
°
C
A
T
= 25°
C
A
T
= -55°C
A
0
5
10
15
20
25
30
0
5
10
15
20
25
30
ID, DRAIN SOURCE CURRENT (A)
ID, DRAIN SOURCE CURRENT (A)
Fig. 4 Typical On-Resistance vs.
Drain Current and Temperature
Fig. 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
V
I
= 4.5V
GS
= 5A
D
V
I
= 10V
GS
= 10A
D
-50 -25
TJ, JUNCTION TEMPERATURE (
Fig. 6 On-Resistance Variation with Temperature
0
25
50
75 100 125 150
-50 -25
TJ, JUNCTION TEMPERATURE (
Fig. 5 On-Resistance Variation with Temperature
0
25
50
75 100 125 150
°
C)
°C)
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© Diodes Incorporated
DMG4406LSS
Document number: DS35539 Rev. 7 - 2
DMG4406LSS
30
25
20
15
10
5
0
-50 -25
0
25
50
75 100 125 150
0
0.2
0.4
0.6
0.8
1.0
1.2
VSD, SOURCE-DRAIN VOLTAGE (V)
TA, AMBIENT TEMPERATURE (°C)
Fig. 8 Diode Forward Voltage vs. Current
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
2,000
10,000
1,000
f = 1MHz
1,800
T
T
= 150°C
= 125°C
A
1,600
1,400
A
C
1,200
iss
1,000
800
100
T
= 85°C
= 25°C
A
600
10
1
400
C
oss
200
T
A
C
rss
0
0
5
10
15
20
25
30
0
10
VDS, DRAIN-SOURCE VOLTAGE(V)
Fig. 10 Typical Drain-Source Leakage Current vs. Voltage
20
30
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 9 Typical Junction Capacitance
10
9
1,000
f = 1MHz
8
7
6
5
4
3
2
100
10
1
R
DS(on)
Limited
DC
P
= 10s
W
P
= 1s
W
P
= 100ms
W
P
= 10ms
W
P
= 1ms
W
P
= 100µs
0.1
W
P
= 10µs
W
1
0
0.01
0.01
0.1
1
10
100
0
5
10
Qg, TOTAL GATE CHARGE (nC)
Fig. 11 Gate-Charge Characteristics
15
20
25
30
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 12 SOA, Safe Operation Area
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© Diodes Incorporated
DMG4406LSS
Document number: DS35539 Rev. 7 - 2
DMG4406LSS
1
D = 0.7
D = 0.5
D = 0.3
D = 0.9
0.1
D = 0.1
D = 0.05
D = 0.02
D = 0.01
D = 0.005
0.01
R
R
(t) = r(t) * R
= 60°C/W
θ
JA
JA
θJA
θ
Duty Cycle, D = t1/ t2
Single Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1,000
t1, PULSE DURATION TIMES (sec)
Fig. 13 Transient Thermal Resistance
Package Outline Dimensions
SO-8
Dim
Min
-
0.10
1.30
0.15
0.3
Max
1.75
0.20
1.50
0.25
0.5
A
A1
A2
A3
b
E1
E
Gauge Plane
Seating Plane
A1
L
Detail ‘A’
D
E
E1
e
4.85
5.90
3.85
4.95
6.10
3.95
7°~9°
h
°
45
1.27 Typ
h
L
θ
-
0.35
0.82
8°
Detail ‘A’
A2
A3
A
0.62
0°
b
e
All Dimensions in mm
D
Suggested Pad Layout
X
Dimensions Value (in mm)
X
Y
C1
C2
0.60
1.55
5.4
C1
1.27
C2
Y
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DMG4406LSS
Document number: DS35539 Rev. 7 - 2
DMG4406LSS
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
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Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
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Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2012, Diodes Incorporated
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© Diodes Incorporated
DMG4406LSS
Document number: DS35539 Rev. 7 - 2
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