DMG4822SSD_15 [DIODES]
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET;
| 型号： | DMG4822SSD_15 |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | DUAL N-CHANNEL ENHANCEMENT MODE MOSFET |
| 文件： | 总7页 (文件大小：267K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DMG4822SSD
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features and Benefits
Low On-Resistance
Low Input Capacitance
Low Input/Output leakage
Low Gate Resistance
Fast Switching Speed
ID max
TA = +25°C
V(BR)DSS
RDS(ON) max
20mΩ @ VGS = 10V
30V
10A
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Description
This MOSFET has been designed to minimize the on-state resistance
(RDS(on)) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
Mechanical Data
Case: SO-8
Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
Applications
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections Indicator: See diagram
Terminals: Finish NiPdAu over Copper leadframe. Solderable
per MIL-STD-202, Method 208
General Purpose Interfacing Switch
Power Management Functions
DC-DC Converters
Analog Switch
Weight: 0.072 grams (approximate)
D2
D1
S1
D1
G1
S2
G2
D1
D2
D2
G2
G1
S2
S1
TOP VIEW
N-Channel MOSFET
N-Channel MOSFET
Internal Schematic
Ordering Information (Note 4)
Part Number
Case
Packaging
DMG4822SSD-13
SO-8
2,500/Tape & Reel
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
8
5
8
5
= Manufacturer’s Marking
G4822SD = Product Type Marking Code
YYWW = Date Code Marking
YY or YY = Year (ex: 13 = 2013)
G4822SD
YY WW
G4822SD
YY WW
WW = Week (01 - 53)
YY = Date Code Marking for SAT (Shanghai Assembly/ Test site)
YY = Date Code Marking for CAT (Chengdu Assembly/ Test site)
1
4
1
4
Shanghai A/T Site
Chengdu A/T Site
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© Diodes Incorporated
DMG4822SSD
Document number: DS35403 Rev. 2 - 2
DMG4822SSD
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Drain-Source Voltage
Symbol
VDSS
Value
30
Units
V
V
Gate-Source Voltage
±25
VGSS
T
T
= +25°C
= +85°C
Steady
State
10
6.6
A
A
Continuous Drain Current (Note 5) VGS = 10V
ID
A
Pulsed Drain Current (Note 6)
60
A
A
IDM
IAR
Avalanche Current (Note 7 & 8)
1.68
12.8
Repetitive Avalanche Energy L= 0.3mH (Note 7 & 8)
mJ
EAR
Thermal Characteristics @TA = 25°C unless otherwise specified
Characteristic
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Operating and Storage Temperature Range
Symbol
PD
RθJA
Value
1.42
88.4
Units
W
°C/W
°C
-55 to +150
TJ, TSTG
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 9)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
Symbol
Min
Typ
Max
Unit
Test Condition
30
-
-
-
-
-
1
V
BVDSS
IDSS
VGS = 0V, ID = 250μA
μA
nA
VDS = 30V, VGS = 0V
VGS = ±25V, VDS = 0V
-
±100
IGSS
ON CHARACTERISTICS (Note 9)
Gate Threshold Voltage
1
-
-
3
20
31
-
V
VGS(th)
VDS = VGS, ID = 250μA
13.4
19.5
20
V
V
GS = 10V, ID = 8.5A
GS = 4.5V, ID = 6A
Static Drain-Source On-Resistance
mΩ
RDS (ON)
-
Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 10)
Input Capacitance
-
mS
V
|Yfs|
VSD
VDS = 5V, ID = 8.5A
VGS = 0V, IS = 1A
-
0.4
1.0
-
-
-
478.9
96.7
61.4
1.1
-
-
-
pF
pF
pF
Ω
Ciss
Coss
Crss
Rg
VDS = 16V, VGS = 0V,
f = 1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
VDS = 0V, VGS = 0V,f = 1MHz
5
-
-
-
-
-
-
-
-
nC
nC
nC
nC
ns
ns
ns
ns
Total Gate Charge (VGS = 4.5V)
Total Gate Charge (VGS = 10V)
Gate-Source Charge
Qg
VGS = 10V, VDS = 15V,
ID =8.5A
-
-
-
-
-
-
-
10.5
1.8
Qg
Qgs
Qgd
tD(on)
tr
Gate-Drain Charge
1.6
Turn-On Delay Time
2.9
Turn-On Rise Time
7.9
V
DS= 15V, VGS = 10V,
Turn-Off Delay Time
14.6
3.1
RL = 1.8ꢀ, RG = 3ꢀ,
tD(off)
tf
Turn-Off Fall Time
Notes:
5. Device mounted on FR-4 PCB, with minimum recommended pad layout.
6. Device mounted on minimum recommended pad layout test board, 10μs pulse duty cycle = 1%
7. Repetitive rating, pulse width limited by junction temperature.
8. IAR and EAR rating are based on low frequency and duty cycles to keep Tj=+25°C
9. Short duration pulse test used to minimize self-heating effect.
10. Guaranteed by design. Not subject to product testing.
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DMG4822SSD
Document number: DS35403 Rev. 2 - 2
DMG4822SSD
30
25
20
15
20
15
V
= 5.0V
DS
Ave V (V) @ 150°C
GS
10
5
Ave V (V) @ 125°C
GS
Ave V (V) @ 85°C
GS
10
Ave V (V) @ 25°C
GS
5
0
Ave V (V) @ 55°C
GS
0
0
0.5
1
1.5
VGS, GATE-SOURCE VOLTAGE
Fig.2 Typical Transfer Characteristics
2
2.5
3
3.5
4
0.5
1
1.5
2
2.5
3
3.5
4
4.5 5
0
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig.1 Typical Output Characteristic
0.05
0.04
0.03
0.04
0.03
0.02
V
= 10V
R
() Ave @ V =3.5V
DS(ON) GS
GS
Ave R
() @ 150°C
DS(ON)
Ave R
(
) @ 125°C
() @ 85°C
DS(ON)
DS(ON)
Ave R
R
() Ave @ V =4.5V
DS(ON) GS
Ave R
() @ 25°C
DS(ON)
0.02
0.01
0
R
() Ave @ V =10V
DS(ON) GS
Ave R
() @ -55°C
DS(ON)
0.01
0
0
5
10
15
20
25
30
0
5
10
15
20
25
30
ID, DRAIN-SOURCE CURRENT
ID, DRAIN CURRENT
Fig. 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
Fig. 4 Typical On-Resistance vs.
Drain Current and Temperature
1.7
0.06
0.05
R
()
DS(ON)
@ V =10V, I =10A
GS
D
1.5
1.3
1.1
R
()
DS(ON)
0.04
0.03
0.02
@ V =4.5V, I =5A
GS
D
R
()
DS(ON)
@ V =4.5V, I =5A
GS
D
0.9
R
()
DS(ON)
@ V =10V, I =10A
GS
D
0.01
0
0.7
0.5
- 50 -25
TJ, JUNCTION TEMPERATURE (
Fig. 6 On-Resistance Variation with Temperature
0
25
50
75 100 125 150
- 50 -25
TJ, JUNCTION TEMPERATURE (
Fig. 5 On-Resistance Variation with Temperature
0
25
50
75 100 125 150
C)
C)
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DMG4822SSD
Document number: DS35403 Rev. 2 - 2
DMG4822SSD
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DMG4822SSD
Document number: DS35403 Rev. 2 - 2
DMG4822SSD
2
20
18
16
1.8
1.6
1.4
14
12
Vth (V) @ I =1mA
D
10
8
Vth (V) @ I =250µA
D
1.2
V
(V)@T =25°C
A
SD
6
1
0.8
0.6
4
2
0
0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
VSD, SOURCE-DRAIN VOLTAGE (V)
Fig.8 Diode Forward Voltage vs. Current
1
1.1 1.2
-50 -25
0
25
50 75 100 125 150
TJ, JUNCTION TEMPERATURE (
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
C)
10000
1000
Ciss Ave(pF)
I
(nA) Ave @ 150°C
(nA) Ave @ 125°C
DSS
1000
100
I
DSS
Coss Ave(pF)
Crss Ave(pF)
100
I
(nA) Ave @ 85°C
DSS
10
1
I
(nA) Ave @ 25°C
DSS
f=1MHz
10
0
5
10
15
20
25
30
0
4
8
12
16
20
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 9 Typical Drain-Source Leakage Current vs. Voltage
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 10 Typical Junction Capacitance
10
V
=15V, I =10A
D
DS
8
6
4
2
0
0
2
4
6
8
10
12
QG - (nC)
Fig. 11 Gate Charge
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DMG4822SSD
Document number: DS35403 Rev. 2 - 2
DMG4822SSD
1
r(t) @ D=0.5
r(t) @ D=0.3
r(t) @ D=0.9
r(t) @ D=0.7
0.1
r(t) @ D=0.1
r(t) @ D=0.05
r(t) @ D=0.02
r(t) @ D=0.01
r(t) @ D=0.005
0.01
Rthja(t)=r(t) * Rthja
Rthja=90 C/W
Duty Cycle, D=t1 / t2
r(t) @ D=Single Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
t1, PULSE DURATION TIME (sec)
Fig. 12 Transient Thermal Resistance
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
SO-8
Dim
Min
-
0.10
1.30
0.15
0.3
Max
1.75
0.20
1.50
0.25
0.5
A
A1
A2
A3
b
E1
E
Gauge Plane
Seating Plane
A1
L
D
E
E1
e
h
L
4.85
5.90
3.85
1.27 Typ
-
0.62
0
4.95
6.10
3.95
Detail ‘A’
7°~9°
h
°
45
0.35
0.82
8
Detail ‘A’
A2
A3
A
b
All Dimensions in mm
e
D
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
X
Dimensions Value (in mm)
X
Y
C1
C2
0.60
1.55
5.4
C1
1.27
C2
Y
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DMG4822SSD
Document number: DS35403 Rev. 2 - 2
DMG4822SSD
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
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indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2014, Diodes Incorporated
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