DMG6602SVT [DIODES]
COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET; 互补对增强型MOSFET
| 型号： | DMG6602SVT |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET |
| 文件： | 总10页 (文件大小：272K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DMG6602SVT
COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET
Product Summary
Features and Benefits
•
•
•
•
•
•
•
Low On-Resistance
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Totally Lead-Free Finish; RoHS compliant (Note 1)
Halogen and Antimony Free. “Green” Device (Note 2)
Qualified to AEC-Q101 Standards for High Reliability
ID
Device
V(BR)DSS
RDS(on)
TA = 25°C
3.4A
2.7A
60mΩ @ VGS = 10V
100mΩ @ VGS = 4.5V
95mΩ @ VGS = -10V
140mΩ @ VGS = -4.5V
Q1
30V
-2.8A
-2.3A
Q2
-30V
Mechanical Data
•
•
Case: TSOT26
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals Connections: See Diagram
Terminals: Finish – Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
Description and Applications
This new generation MOSFET has been designed to minimize the on-
state resistance (RDS(on)) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
•
•
•
•
•
•
Backlighting
DC-DC Converters
Power management functions
•
Weight: 0.013 grams (approximate)
Q1
D1
Q2
D2
TSOT26
G1
S2
G2
1
2
3
6
5
4
D1
S1
D2
G1
G2
S1
S2
Top View
Top View
N-Channel
P-Channel
Ordering Information (Note 3)
Part Number
DMG6602SVT-7
Case
TSOT26
Packaging
3000 / Tape & Reel
Notes:
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. Halogen and Antimony free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
3. For packaging details, go to our website at http://www.diodes.com.
Marking Information
66C = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: X = 2010)
66C
M = Month (ex: 9 = September)
Date Code Key
Year
2010
2011
2012
2013
2014
2015
2016
2017
Code
X
Y
Z
A
B
C
D
E
Month
Code
Jan
1
Feb
2
Mar
3
Apr
4
May
5
Jun
6
Jul
7
Aug
8
Sep
9
Oct
O
Nov
N
Dec
D
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© Diodes Incorporated
DMG6602SVT
Document number: DS35106 Rev. 6 - 2
DMG6602SVT
Maximum Ratings – Q1 @TA = 25°C unless otherwise specified
Characteristic
Drain-Source Voltage
Symbol
VDSS
Value
30
Unit
V
Gate-Source Voltage
±20
V
VGSS
TA = 25°C
TA = 70°C
TA = 25°C
TA = 70°C
Steady
Continuous Drain Current (Note 5) VGS = 10V
State
3.4
2.7
A
A
ID
ID
Steady
Continuous Drain Current (Note 5) VGS = 4.5V
State
2.7
2.2
Maximum Continuous Body Diode Forward Current (Note 5)
Pulsed Drain Current (Note 5)
IS
1.5
25
A
A
IDM
Maximum Ratings – Q2 @TA = 25°C unless otherwise specified
Characteristic
Drain-Source Voltage
Symbol
VDSS
Value
-30
Unit
V
Gate-Source Voltage
±20
V
VGSS
TA = 25°C
TA = 70°C
TA = 25°C
TA = 70°C
Steady
Continuous Drain Current (Note 5) VGS = -10V
State
-2.8
-2.4
A
A
ID
ID
Steady
Continuous Drain Current (Note 5) VGS = -4.5V
State
-2.3
-2.1
Maximum Continuous Body Diode Forward Current (Note 5)
Pulsed Drain Current (Note 5)
IS
ID
-1.5
-20
A
A
Thermal Characteristics
Characteristic
Symbol
Value
0.84
0.52
155
109
1.27
0.8
102
71
34
Units
T
A = 25°C
Total Power Dissipation (Note 4)
W
PD
TA = 70°C
Steady state
t<10s
Thermal Resistance, Junction to Ambient (Note 4)
Total Power Dissipation (Note 5)
°C/W
W
Rθ
JA
TA = 25°C
PD
TA = 70°C
Steady state
t<10s
Thermal Resistance, Junction to Ambient (Note 5)
Rθ
Rθ
JA
°C/W
°C
Thermal Resistance, Junction to Case (Note 5)
Operating and Storage Temperature Range
JC
-55 to +150
TJ, TSTG
Notes:
4. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
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© Diodes Incorporated
DMG6602SVT
Document number: DS35106 Rev. 6 - 2
DMG6602SVT
Electrical Characteristics – Q1 NMOS@ T = 25°C unless otherwise stated
A
Characteristic
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
Symbol
Min
Typ
Max
Unit
Test Condition
30
-
-
-
-
-
V
BVDSS
IDSS
VGS = 0V, ID = 250μA
VDS = 24V, VGS = 0V
VGS = ±20V, VDS = 0V
1.0
µA
nA
-
±100
IGSS
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
1.0
-
-
2.3
V
VGS(th)
VDS = VGS, ID = 250μA
V
GS = 10V, ID = 3.1A
38
55
60
100
Static Drain-Source On-Resistance
mΩ
RDS (ON)
VGS = 4.5V, ID = 2A
VDS = 5V, ID = 3.1A
VGS = 0V, IS = 1A
Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
-
-
4
-
S
V
|Yfs|
VSD
0.8
1
-
-
-
-
-
-
-
-
-
-
-
-
290
40
40
1.4
4
400
Ciss
Coss
Crss
Rg
V
DS = 15V, VGS = 0V,
80
80
-
Output Capacitance
pF
f = 1.2MHz
Reverse Transfer Capacitance
Gate Resistance
Ω
VDS = 0V, VGS = 0V, f = 1MHz
6
13
-
Total Gate Charge (VGS = 4.5V)
Total Gate Charge (VGS = 10V)
Gate-Source Charge
Qg
VDS = 15V, VGS = 4.5V, ID = 3.1A
9
Qg
nC
ns
1.2
1.5
3
Qgs
Qgd
tD(on)
tr
VDS = 15V, VGS = 10V, ID = 3A
-
Gate-Drain Charge
-
Turn-On Delay Time
5
-
Turn-On Rise Time
VGS = 10V, VDS = 15V,
RG = 3Ω, RL = 4.7Ω
13
3
-
Turn-Off Delay Time
tD(off)
tf
-
Turn-Off Fall Time
Notes:
6. Short duration pulse test used to minimize self-heating effect.
7. Guaranteed by design. Not subject to product testing.
10.0
10
8
V
= 5.0V
DS
8.0
6.0
4.0
2.0
0.0
6
4
2
0
0
1
2
3
4
5
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
VGS, GATE SOURCE VOLTAGE(V)
Fig. 2 Typical Transfer Characteristics
VDS, DRAIN -SOURCE VOLTAGE(V)
Fig. 1 Typical Output Characteristics
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DMG6602SVT
Document number: DS35106 Rev. 6 - 2
DMG6602SVT
0.16
0.12
1
V
= 4.5V
GS
Ave R
(Ω) @ 150°C
DS(ON)
Ave R
(Ω) @ 125°C
DS(ON)
0.1
0.08
R
(Ω
) Ave @ V =4.5V
G
DS(ON)
Ave R
Ave R
(
Ω
) @ 85°C
DS(ON)
(
Ω) @ 25°C
DS(ON)
R
(
Ω
) Ave @ V =10V
DS(ON)
G
0.04
0
Ave R
(Ω) @ -55°C
DS(ON)
0.01
0
4
8
12
16
20
0
2
4
6
8
10
ID, DRAIN SOURCE CURRENT
ID, DRAIN SOURCE CURRENT (A)
Fig. 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
Fig. 4 Typical On-Resistance vs.
Drain Current and Temperature
1.6
1.4
1.2
0.1
0.08
0.06
0.04
0.02
0
1
0.8
0.6
-50 -25
TJ, JUNCTION TEMPERATURE (
Fig. 6 On-Resistance Variation with Temperature
0
25
50
75 100 125 150
-50 -25
TJ, JUNCTION TEMPERATURE (
Fig. 5 On-Resistance Variation with Temperature
0
25
50
75 100 125 150
°C)
°
C)
10
2.4
2.0
1.6
8
I
= 250μA
D
V
(V) @ V =0V T = 25°C
DS A
SD
6
4
I
= 1mA
D
1.2
0.8
2
0
0.4
0
-50 -25
TJ, JUNCTION TEMPERATURE (
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
0
25
50
75 100 125 150
0
0.2
0.4
0.6
0.8
1.0
1.2
VSD, SOURCE-DRAIN VOLTAGE (V)
°
C)
Fig. 8 Diode Forward Voltage vs. Current
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© Diodes Incorporated
DMG6602SVT
Document number: DS35106 Rev. 6 - 2
DMG6602SVT
1000
10
8
f = 1MHz
Ave (pF)
C
ISS
V
I
= 10V
DS
= 3.0A
D
C
Ave (pF)
6
4
2
0
OSS
100
C
Ave (pF)
RSS
10
0
5
10
15
20
25
30
0
2
4
6
8
10
Qg, TOTAL GATE CHARGE (nC)
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 9 Typical Junction Capacitance
Fig. 10 Gate Charge
100
10
R
DS(on)
P
= 100µs
W
Limited
DC
1
P
= 10s
W
P
= 1s
W
P
= 100ms
W
P
= 10ms
W
0.1
P
= 1ms
TJ(max) = 150°C
TA = 25°C
W
VGS = 10V
Single Pulse
DUT on 1 * MRP Board
0.01
0.1
1
10
100
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 11 SOA, Safe Operation Area
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© Diodes Incorporated
DMG6602SVT
Document number: DS35106 Rev. 6 - 2
DMG6602SVT
Electrical Characteristics – Q2 PMOS@ T = 25°C unless otherwise stated
A
Characteristic
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
Symbol
Min
Typ
Max
Unit
Test Condition
-30
-
-
-
-
V
BVDSS
IDSS
VGS = 0V, ID = -250μA
VDS = -24V, VGS = 0V
VGS = ±20V, VDS = 0V
Zero Gate Voltage Drain Current
Gate-Source Leakage
-
-
-1.0
±100
µA
nA
IGSS
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
-1.0
-
-
-2.3
V
VGS(th)
VDS = VGS, ID = -250μA
V
GS = -10V, ID = -2.7A
73
99
95
140
Static Drain-Source On-Resistance
mΩ
RDS (ON)
VGS = -4.5V, ID = -2A
VDS = -5V, ID = -2.7A
VGS = 0V, IS = -1A
Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
-
-
6
-
S
V
|Yfs|
VSD
-0.8
-1.0
-
-
-
-
-
-
-
-
-
-
-
-
350
50
420
Ciss
Coss
Crss
Rg
VDS = -15V, VGS = 0V,
f = 1.2MHz
100
Output Capacitance
pF
45
80
-
Reverse Transfer Capacitance
Gate Resistance
17.1
4
Ω
VDS = 0V, VGS = 0V, f = 1MHz
6
9
-
Total Gate Charge (VGS = -4.5V)
Total Gate Charge (VGS = -10V)
Gate-Source Charge
Qg
VDS = -15V, VGS = -4.5V, ID = -3A
7
Qg
nC
ns
0.9
1.2
4.8
7.3
20
Qgs
Qgd
tD(on)
tr
VDS = -15V, VGS = -10V, ID = -3A
-
Gate-Drain Charge
-
Turn-On Delay Time
-
Turn-On Rise Time
VGS = -10V, VDS = -15V,
RG = 6Ω, RL = 15Ω
-
Turn-Off Delay Time
tD(off)
tf
13
-
Turn-Off Fall Time
Notes:
6. Short duration pulse test used to minimize self-heating effect.
7. Guaranteed by design. Not subject to production testing.
8.0
8
6
4
2
6.0
4.0
2.0
0.0
0
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
0
0.5
VDS, DRAIN -SOURCE VOLTAGE(V)
Fig. 12 Typical Output Characteristics
1
1.5
2
2.5
3
3.5
4
4.5
5
VGS, GATE SOURCE VOLTAGE(V)
Fig. 13 Typical Transfer Characteristics
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© Diodes Incorporated
DMG6602SVT
Document number: DS35106 Rev. 6 - 2
DMG6602SVT
0.4
0.35
0.3
0.2
V
= 4.5V
GS
R
(Ω) Ave @ V =2.5V
DS(ON) G
Ave R
(Ω) @ 125°C
DS(ON)
Ave R
(Ω) @ 150°C
DS(ON)
0.16
0.12
0.08
0.04
0
0.25
0.2
Ave R
(Ω) @ 85°C
DS(ON)
Ave R
(Ω
) @ 25°C
DS(ON)
0.15
0.1
R
(Ω
) Ave @ V =4.5V
G
DS(ON)
Ave R
(Ω
) @ -55°C
DS(ON)
0.05
0
R
(Ω
) Ave @ V =10V
G
DS(ON)
0
2
4
6
8
0
2
4
6
8
ID, DRAIN SOURCE CURRENT
ID, DRAIN SOURCE CURRENT (A)
Fig. 14 Typical On-Resistance vs.
Drain Current and Gate Voltage
Fig. 15 Typical On-Resistance vs.
Drain Current and Temperature
1.6
1.4
1.2
0.2
0.16
0.12
0.08
0.04
0
1
0.8
0.6
-50 -25
TJ, JUNCTION TEMPERATURE (
Fig. 17 On-Resistance Variation with Temperature
0
25
50
75 100 125 150
-50 -25
TJ, JUNCTION TEMPERATURE (
Fig. 16 On-Resistance Variation with Temperature
0
25
50
75 100 125 150
°
C)
°
C)
2
8
6
4
2
0
1.6
1.2
0.8
0.4
0
0
0.2
0.4
0.6
0.8
1
1.2 1.4
-50 -25
0
25
TJ, JUNCTION TEMPERATURE (
Fig. 18 Gate Threshold Variation vs. Ambient Temperature
50
75 100 125 150
°C)
VSD, SOURCE -DRAIN VOLTAGE (V)
Fig. 19 Diode Forward Voltage vs. Current
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DMG6602SVT
Document number: DS35106 Rev. 6 - 2
DMG6602SVT
1000
10
8
f = 1MHz
C
Ave(pF)
ISS
V
I
= -15
DS
= -3A
D
6
4
100
C
Ave(pF)
OSS
C
Ave(pF)
RSS
2
0
10
0
2
4
6
8
10
0
5
10
15
20
25
30
Qg, TOTAL GATE CHARGE (nC)
-VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 20 Typical Junction Capacitance
Fig. 21 Gate Charge
100
10
R
DS(on)
P
= 100µs
Limited
W
1
0.1
DC
P
= 10s
W
P
= 1s
W
P
= 100ms
W
P
= 10ms
W
TJ(max) = 150°C
TA = 25°C
P
= 1ms
W
VGS = -10V
Single Pulse
DUT on 1 * MRP Board
0.01
0.1
1
10
100
-VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 22 SOA, Safe Operation Area
1
D = 0.7
D = 0.5
D = 0.3
D = 0.9
0.1
D = 0.1
D = 0.05
D = 0.02
0.01
D = 0.01
D = 0.005
R
R
(t) = r(t) * R
= 164C/W
θ
JA
JA
θJA
θ
Duty Cycle, D = t1/ t2
Single Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
t1, PULSE DURATION TIME (sec)
Fig. 23 Transient Thermal Resistance
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DMG6602SVT
Document number: DS35106 Rev. 6 - 2
DMG6602SVT
Package Outline Dimensions
TSOT26
Dim Min Max Typ
D
e1
A
A1
A2
D
E
E1
b
1.00
0.01 0.10
0.84 0.90
−
−
−
−
2.90
2.80
1.60
−
−
−
−
−
−
−
E
E1
L2
c
0.30 0.45
c
e
e1
L
0.12 0.20
θ
−
0.95
1.90
L
−
−
−
−
4x θ1
e
6x b
0.30 0.50
L2
θ
θ1
0.25
4°
−
−
0°
4°
−
8°
12°
A2
A1
A
All Dimensions in mm
Suggested Pad Layout
C
C
Dimensions Value (in mm)
C
X
Y
0.950
0.700
1.000
3.199
Y1
Y1
Y (6x)
X (6x)
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© Diodes Incorporated
DMG6602SVT
Document number: DS35106 Rev. 6 - 2
DMG6602SVT
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2012, Diodes Incorporated
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© Diodes Incorporated
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Document number: DS35106 Rev. 6 - 2
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