DMG7430LFG [DIODES]
This MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.; 该MOSFET的设计，以最大限度地减少通态电阻（ RDS （ ON） ），并同时保持出色的开关性能，使其成为理想的高效率电源管理应用。
| 型号： | DMG7430LFG |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | This MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. |
| 文件： | 总7页 (文件大小：223K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DMG7430LFG
Green
N-CHANNEL ENHANCEMENT MODE MOSFET
POWERDI®
Product Summary
Features and Benefits
•
•
Low RDS(ON) – ensures on state losses are minimized
ID max
V(BR)DSS
RDS(ON) max
Small form factor thermally efficient package enables higher
density end products
TA = 25°C
11mΩ @ VGS = 10V
15mΩ @ VGS = 4.5V
10.5A
9.2A
•
Occupies just 33% of the board area occupied by SO-8 enabling
smaller end product
30V
•
•
" Green” component and RoHS compliant (Note 1)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Description and Applications
This MOSFET has been designed to minimize the on-state resistance
(RDS(on)) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
•
•
Case: POWERDI®3333-8
Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
•
•
•
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections Indicator: See diagram
Terminals: Finish ⎯ NiPdAu over Copper leadframe. Solderable
per MIL-STD-202, Method 208
•
•
•
Backlighting
Power Management Functions
DC-DC Converters
•
Weight: 0.072 grams (approximate)
POWERDI®3333-8
8
7
6
5
1
2
3
4
Pin 1
S
S
S
G
D
D
D
D
Top View
Internal Schematic
Bottom View
Top View
Ordering Information (Note 2)
Part Number
DMG7430LFG-7
DMG7430LFG-13
Case
Packaging
2000/Tape & Reel
3000/Tape & Reel
POWERDI®3333-8
POWERDI®3333-8
Notes:
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2). All applicable RoHS exemptions applied.
2. For packaging details, go to our website at http://www.diodes.com.
Marking Information
G73 = Product Type Marking Code
YYWW = Date Code Marking
YY = Last digit of year (ex: 11 = 2011)
WW = Week code (01 ~ 53)
G73
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DMG7430LFG
Document number: DS35497 Rev. 5 - 2
DMG7430LFG
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Drain-Source Voltage
Symbol
VDSS
Value
30
Units
V
V
Gate-Source Voltage
±20
VGSS
T
T
A = 25°C
A = 70°C
Steady
State
10.5
8.5
A
A
ID
Continuous Drain Current (Note 4) VGS = 10V
TA = 25°C
TA = 70°C
14
11
t<10s
ID
IDM
IS
90
3.0
22
24
A
A
Pulsed Drain Current (10μs pulse, duty cycle = 1%)
Maximum Continuous Body Diode Forward Current (Note 4)
Avalanche Current (Note 5) L = 0.1mH
A
IAR
EAR
Repetitive Avalanche Energy (Note 5) L = 0.1mH
mJ
Thermal Characteristics @TA = 25°C unless otherwise specified
Characteristic
Symbol
PD
Value
0.9
1.5
142
78
2.2
3.5
59
Units
Steady state
Total Power Dissipation (Note 3)
W
t<10s
Steady state
t<10s
Steady state
t<10s
Thermal Resistance, Junction to Ambient (Note 3)
Total Power Dissipation (Note 4)
°C/W
W
Rθ
JA
PD
Steady state
t<10s
Thermal Resistance, Junction to Ambient (Note 4)
Rθ
JA
33
11
°C/W
°C
Thermal Resistance, Junction to Case (Note 4)
Operating and Storage Temperature Range
Rθ
JC
-55 to +150
TJ, TSTG
100
10
100
P
= 10µs
W
Single Pulse
90
80
70
60
50
40
30
20
10
R
R
T
= 140
°
C/W
= r * R
θJA
R
θ
JA
DS(on)
Limited
θ
JA(t)
(t)
- T = P * R
J
A
θJA(t)
DC
P
= 10s
W
P
P
= 1s
1
W
= 100ms
W
P
= 10ms
W
P
= 1ms
W
P
= 100µs
W
0.1
0.01
0.01
0
0.1
1
10
100
0.0001 0.001 0.01
0.1
1
10
100 1,000
VDS, DRAIN-SOURCE VOLTAGE (V)
t1, PULSE DURATION TIME (sec)
Fig. 1 Single Pulse Maximum Power Dissipation
Fig. 2 SOA, Safe Operation Area
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DMG7430LFG
Document number: DS35497 Rev. 5 - 2
DMG7430LFG
1
D = 0.9
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.1
D = 0.05
D = 0.02
D = 0.01
D = 0.005
0.01
R
R
= r * R
(t) θJA
= 140°C/W
θ
JA(t)
θJA
Duty Cycle, D = t1/t2
D = Single Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1,000
t1, PULSE DURATION TIME (sec)
Fig. 3 Transient Thermal Resistance
Electrical Characteristics TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
Symbol
Min
Typ
Max
Unit
Test Condition
30
-
-
-
-
-
V
BVDSS
IDSS
VGS = 0V, ID = 250μA
1
μA
nA
VDS = 30V, VGS = 0V
VGS = ±20V, VDS = 0V
-
±100
IGSS
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
1.4
-
7
2.5
11
15
-
V
VGS(th)
VDS = VGS, ID = 250μA
-
-
-
-
VGS = 10V, ID = 20A
mΩ
Static Drain-Source On-Resistance
RDS (ON)
11
74
0.75
V
GS = 4.5V, ID = 20A
Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
S
V
|Yfs|
VSD
VDS = 5V, ID = 20A
VGS = 0V, IS = 1A
1.0
-
-
-
-
-
-
-
-
-
-
-
-
-
-
1281
145
125
1.2
-
-
-
-
-
-
-
-
-
-
-
-
-
-
pF
pF
pF
Ω
Ciss
Coss
Crss
Rg
V
DS = 15V, VGS = 0V,
Output Capacitance
f = 1.0MHz
Reverse Transfer Capacitance
Gate resistance
VDS = 0V, VGS = 0V, f = 1.0MHz
12.5
26.7
3.6
nC
nC
nC
nC
ns
ns
ns
ns
ns
nC
Total Gate Charge (VGS = 4.5V)
Total Gate Charge (VGS = 10V)
Gate-Source Charge
Qg
Qg
V
DS = 15V, ID = 12A
Qgs
Qgd
tD(on)
tr
Gate-Drain Charge
4.4
Turn-On Delay Time
5.2
Turn-On Rise Time
21.2
22.3
5.1
V
DD = 15V, VGS = 10V,
Turn-Off Delay Time
RL = 1.25ꢀ, RG = 3ꢀ,
tD(off)
tf
Turn-Off Fall Time
Reverse Recovery Time
Reverse Recovery Charge
8.5
Trr
IF = 12A, di/dt = 500A/μs
IF = 12A, di/dt = 500A/μs
7.0
Qrr
Notes:
3. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
4. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
5. IAR and EAR rating are based on low frequency and duty cycles to keep TJ = 25°C
6. Short duration pulse test used to minimize self-heating effect.
7. Guaranteed by design. Not subject to product testing.
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DMG7430LFG
Document number: DS35497 Rev. 5 - 2
DMG7430LFG
30
25
20
30
25
V
= 5.0V
DS
V
= 5.0V
DS
20
15
10
T
= 125°C
A
15
10
T
= 150°C
A
T
= 85°C
A
5
0
5
0
T
= 25°C
A
T
= -55°C
A
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0
0.5
1.0
1.5
2.0
VDS, DRAIN-SOURCE VOLTAGE (V)
VGS, GATE-SOURCE VOLTAGE
Fig.4 Typical Output Characteristic
Fig. 5 Typical Transfer Characteristics
0.04
0.03
0.04
0.03
I
= 20A
0.02
0.02
D
V
V
= 4.5V
= 10V
GS
I
= 10A
0.01
0
D
0.01
0
GS
0
5
10
15
20
25
30
3
4
5
6
7
8
9
10
ID, DRAIN-SOURCE CURRENT
VGS, GATE VOLTAGE (V)
Fig. 6 Typical On-Resistance vs.
Drain Current and Gate Voltage
Fig. 7 Typical On-Resistance vs. Gate Voltage
0.03
0.02
1.8
1.6
V
= 4.5V
GS
V
= 10V
GS
I
= 20A
D
1.4
1.2
1.0
T
= 150°C
= 125°C
= 85°C
A
T
A
T
A
V
= 4.5V
GS
I
= 10A
D
T
= 25°C
A
0.01
T
= -55°C
A
0.8
0.6
0
0
5
10
15
20
25
30
50 -25
TJ, JUNCTION TEMPERATURE (
Fig. 9 On-Resistance Variation with Temperature
0
25
50
75 100 125 150
ID, DRAIN CURRENT
Fig. 8 Typical On-Resistance vs.
Drain Current and Temperature
°
C)
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DMG7430LFG
Document number: DS35497 Rev. 5 - 2
DMG7430LFG
0.03
0.02
2.5
2.0
I = 1mA
D
V
= 4.5V
GS
I
= 10A
D
1.5
1.0
I
= 250µA
D
0.01
V
= 10V
GS
I
= 20A
D
0.5
0
0
-50 -25
TJ, JUNCTION TEMPERATURE (
-50 -25
0
25
50 75 100 125 150
C)
0
25
50
75 100 125 150
C)
Fig. 10 On-Resistance Variation with Temperature
TJ, JUNCTION TEMPERATURE (
°
°
Fig. 11 Gate Threshold Variation vs. Ambient Temperature
2,000
30
25
20
15
f = 1MHz
1,800
1,600
1,400
C
1,200
iss
T
= 25°C
1,000
800
A
10
600
400
5
0
C
oss
200
C
rss
0
0
5
10
15
20
25
30
0
0.2
0.4
0.6
0.8
1.0
1.2
VDS, DRAIN-SOURCE VOLTAGE (V)
VSD, SOURCE-DRAIN VOLTAGE (V)
Fig. 13 Typical Junction Capacitance
Fig.12 Diode Forward Voltage vs. Current
10,000
1,000
10
9
8
7
6
5
4
3
2
1
0
V
I
= 15V
DS
T
T
= 150°C
= 125°C
A
= 12A
D
A
100
T
= 85°C
= 25°C
A
10
1
T
A
0
5
10
15
20
25
30
0
10 20 30 40 50 60 70 80 90 100
VDS, DRAIN-SOURCE VOLTAGE (V)
Qg, TOTAL GATE CHARGE (nC)
Fig. 15 Gate Charge
Fig. 14 Typical Drain-Source Leakage Current vs. Voltage
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DMG7430LFG
Document number: DS35497 Rev. 5 - 2
DMG7430LFG
Package Outline Dimensions
POWERDI®3333-8
Dim Min Max Typ
A
A3
A1
D
E
3.25 3.35 3.30
3.25 3.35 3.30
D
D2 2.22 2.32 2.27
E2 1.56 1.66 1.61
D2
L
(4x)
A
A1
A3
b
b2
L
0.75 0.85 0.80
1
4
5
0
−
0.05 0.02
0.203
Pin 1 ID
−
0.27 0.37 0.32
0.20
0.35 0.45 0.40
b2
(4x)
E
−
−
E2
L1
e
Z
0.39
0.65
0.515
−
−
−
−
−
−
8
L1
(3x)
All Dimensions in mm
Z (4x)
e
b (8x)
Suggested Pad Layout
X
G
Dimensions
Value (in mm)
0.650
C
G
G1
Y
Y1
Y2
Y3
X
0.230
0.420
3.700
2.250
1.850
0.700
2.370
8
5
4
Y2
G1
Y1
Y
1
Y3
X2
0.420
X2
C
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DMG7430LFG
Document number: DS35497 Rev. 5 - 2
DMG7430LFG
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2012, Diodes Incorporated
www.diodes.com
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February 2012
© Diodes Incorporated
DMG7430LFG
Document number: DS35497 Rev. 5 - 2
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