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DMMT3906W_2 [DIODES]

MATCHED PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR; MATCHED PNP小信号表面贴装晶体管
DMMT3906W_2
型号： DMMT3906W_2
厂家： DIODES INCORPORATED    DIODES INCORPORATED
描述：

MATCHED PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
MATCHED PNP小信号表面贴装晶体管

晶体 晶体管
文件： 总4页 (文件大小：171K)
中文：  中文翻译
下载：  下载PDF数据表文档文件
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DMMT3906W  
MATCHED PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR  
Features  
•
•
•
•
•
•
•
Epitaxial Planar Die Construction  
Intrinsically Matched PNP Pair (Note 1)  
Small Surface Mount Package  
SOT-363  
Min  
A
Dim  
A
B
C
D
F
Max  
0.30  
1.35  
2.20  
C2  
E2  
E1  
0.10  
2% Matched Tolerance, hFE, VCE(SAT), VBE(SAT)  
Lead Free/RoHS Compliant (Note 2)  
Qualified to AEC-Q101 Standards for High Reliability  
"Green" Device (Note 4 and 5)  
C
B
1.15  
2.00  
B2  
B1  
C1  
0.65 Nominal  
0.30  
1.80  
—
0.40  
2.20  
0.10  
1.00  
0.40  
0.25  
8°  
H
H
J
Mechanical Data  
•
•
K
J
M
Case: SOT-363  
Case Material: Molded Plastic. UL Flammability  
Classification Rating 94V-0  
Moisture Sensitivity: Level 1 per J-STD-020C  
Terminals: Solderable per MIL-STD-202, Method 208  
K
L
0.90  
0.25  
0.10  
0°  
L
D
F
•
•
•
M
α
Lead Free Plating (Matte Tin Finish annealed over Alloy 42  
leadframe).  
All Dimensions in mm  
•
•
•
•
Terminal Connections: See Diagram  
Marking Information: K4B, See Page 4  
Ordering & Date Code Information: See Page 4  
Weight: 0.015 grams (approximate)  
Maximum Ratings @TA = 25°C unless otherwise specified  
Characteristic  
Collector-Base Voltage  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Value  
Unit  
V
-40  
-40  
Collector-Emitter Voltage  
V
Emitter-Base Voltage  
-5.0  
V
Collector Current - Continuous  
-200  
mA  
mW  
°C/W  
°C  
Power Dissipation  
(Note 3)  
(Note 3)  
200  
Pd  
Thermal Resistance, Junction to Ambient  
Operating and Storage Temperature Range  
625  
Rθ  
JA  
-55 to +150  
Tj, TSTG  
Notes:  
1. Built with adjacent die from a single wafer.  
2. No purposefully added lead.  
3. Device mounted on FR5 PCB: 1.0 x 0.75 x 0.62 in.; pad layout as shown on suggested pad layout document AP02001, which can be found on our  
website at http://www.diodes.com/datasheets/ap02001.pdf.  
4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.  
5. Product manufactured with Date Code UO (week 40, 2007) and newer are built with Green Molding Compound. Product manufactured prior to Date  
Code UO are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.  
DMMT3906W  
© Diodes Incorporated  
DS30312 Rev. 11 - 2  
1 of 4  
www.diodes.com  
Electrical Characteristics @TA = 25°C unless otherwise specified  
Characteristic  
OFF CHARACTERISTICS (Note 6)  
Symbol  
Min  
Max  
Unit  
Test Condition  
IC = -10μA, IE = 0  
Collector-Base Breakdown Voltage  
Collector-Emitter Breakdown Voltage  
Emitter-Base Breakdown Voltage  
Collector Cutoff Current  
-40  
-40  
-5.0  
⎯
V
V
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
ICEX  
⎯
⎯
IC = -1.0mA, IB = 0  
V
⎯
-50  
-50  
IE = -10μA, IC = 0  
nA  
nA  
VCE = -30V, VEB(OFF) = -3.0V  
VCE = -30V, VEB(OFF) = -3.0V  
Base Cutoff Current  
IBL  
⎯
ON CHARACTERISTICS (Note 6)  
IC = -100µA, VCE = -1.0V  
IC = -1.0mA, VCE = -1.0V  
IC = -10mA, VCE = -1.0V  
⎯
⎯
60  
80  
100  
60  
DC Current Gain  
(Note 7)  
300  
hFE  
⎯
⎯
⎯
IC  
= -50mA, VCE = -1.0V  
30  
IC = -100mA, VCE = -1.0V  
IC = -10mA, IB = -1.0mA  
IC = -50mA, IB = -5.0mA  
IC = -10mA, IB = -1.0mA  
IC = -50mA, IB = -5.0mA  
VCE = -5V, IC = -2mA  
-0.25  
-0.40  
Collector-Emitter Saturation Voltage  
Base-Emitter Saturation Voltage  
(Note 7)  
(Note 7)  
V
VCE(SAT)  
⎯
-0.65  
⎯
⎯
-0.85  
-0.95  
V
VBE(SAT)  
Base-Emitter Voltage Matching  
SMALL SIGNAL CHARACTERISTICS  
Output Capacitance  
-1  
mV  
ΔVBE  
4.5  
10  
pF  
pF  
Cobo  
Cibo  
hie  
⎯
⎯
2.0  
0.1  
100  
3.0  
VCB = -5.0V, f = 1.0MHz, IE = 0  
VEB = -0.5V, f = 1.0MHz, IC = 0  
Input Capacitance  
Input Impedance  
12  
kΩ  
Voltage Feedback Ratio  
Small Signal Current Gain  
Output Admittance  
10  
x 10-4  
⎯
hre  
VCE = 10V, IC = 1.0mA,  
f = 1.0kHz  
400  
60  
hfe  
hoe  
μS  
VCE = -20V, IC = -10mA,  
f = 100MHz  
VCE = -5.0V, IC = -100μA,  
RS = 1.0kΩ, f = 1.0kHz  
Current Gain-Bandwidth Product  
Noise Figure  
250  
MHz  
dB  
fT  
⎯
NF  
4.0  
⎯
SWITCHING CHARACTERISTICS  
Delay Time  
35  
35  
ns  
ns  
ns  
ns  
td  
tr  
⎯
⎯
⎯
⎯
VCC = -3.0V, IC = -10mA,  
VBE(off) = 0.5V, IB1 = -1.0mA  
Rise Time  
Storage Time  
225  
75  
ts  
tf  
VCC = -3.0V, IC = -10mA,  
IB1 = IB2 = -1.0mA  
Fall Time  
Notes:  
6. Short duration pulse test used to minimize self-heating effect.  
7. The DC current gain, hFE, (matched at IC = -10mA and VCE = -1.0V) Collector Emitter Saturation Voltage, VCE(SAT)  
and Base Emitter Saturation Voltage, VBE(SAT) are matched with typical matched tolerances of 1% and maximum of 2%.  
,
DMMT3906W  
© Diodes Incorporated  
DS30312 Rev. 11 - 2  
2 of 4  
www.diodes.com  
200  
150  
100  
100  
10  
50  
0
1
0.1  
0
175  
25  
50  
150  
200  
100 125  
75  
1
100  
10  
TA, AMBIENT TEMPERATURE (°C)  
VCB, COLLECTOR-BASE VOLTAGE (V)  
Fig. 1, Max Power Dissipation vs.  
Ambient Temperature  
Fig. 2, Input and Output Capacitance vs.  
Collector-Base Voltage  
1,000  
10  
1
100  
0.1  
10  
1
0.1  
0.01  
10  
1
100  
1,000  
1
100  
1,000  
10  
IC, COLLECTOR CURRENT (mA)  
IC, COLLECTOR CURRENT (mA)  
Fig. 4, Typical Collector-Emitter Saturation Voltage  
vs. Collector Current  
Fig. 3, Typical DC Current Gain vs.  
Collector Current  
1.0  
0.9  
0.8  
0.7  
0.6  
0.5  
I
C
= 10  
I
B
1
10  
100  
IC, COLLECTOR CURRENT (mA)  
Fig. 5, Typical Base-Emitter  
Saturation Voltage vs. Collector Current  
DMMT3906W  
© Diodes Incorporated  
DS30312 Rev. 11 - 2  
3 of 4  
www.diodes.com  
Ordering Information (Note 8)  
Packaging  
Shipping  
Device  
DMMT3906W-7-F  
SOT-363  
3000/Tape & Reel  
Notes:  
8. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.  
Marking Information  
K4B = Product Type Marking Code  
YM = Date Code Marking  
Y = Year ex: T = 2006  
M = Month ex: 9 = September  
K4B  
Date Code Key  
Year  
2002  
2003  
2004  
2005  
2006  
2007  
2008  
2009  
2010  
2011  
2012  
Code  
N
P
R
S
T
U
V
W
X
Y
Z
Month  
Code  
Jan  
Feb  
Mar  
Apr  
May  
Jun  
Jul  
Aug  
Sep  
Oct  
Nov  
Dec  
1
2
3
4
5
6
7
8
9
O
N
D
IMPORTANT NOTICE  
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes  
without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product  
described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall  
assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website,  
harmless against all damages.  
LIFE SUPPORT  
Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written  
approval of the President of Diodes Incorporated.  
DMMT3906W  
© Diodes Incorporated  
DS30312 Rev. 11 - 2  
4 of 4  
www.diodes.com  

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