DMN10H099SK3-13 [DIODES]
Power Field-Effect Transistor, 17A I(D), 100V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3/2;
| 型号： | DMN10H099SK3-13 |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | Power Field-Effect Transistor, 17A I(D), 100V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3/2 开关 脉冲 晶体管 |
| 文件： | 总6页 (文件大小：350K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DMN10H099SK3
Green
100V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features
Low RDS(ON) – ensures on state losses are minimized
ID
TC = +25°C
17A
V(BR)DSS
RDS(on) max
Small form factor thermally efficient package enables higher
density end products
80mΩ @ VGS = 10V
99mΩ @ VGS = 6V
100V
15A
Lead-Free Finish; RoHS compliant (Note 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Description
This new generation complementary MOSFET features low
on-resistance and fast switching, making it ideal for high efficiency
power management applications.
Mechanical Data
Case: TO252 (DPAK)
Case Material: Molded Plastic, “Green” Molding Compound
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram
Applications
Power Management Functions
Terminals: Finish – Matte Tin annealed over Copper leadframe
Solderable per MIL-STD-202, Method 208
Weight: 0.33 grams (approximate)
DC-DC Converters
D
D
TO252
G
S
Top View
Top View
Internal Schematic
Ordering Information (Note 4)
Part Number
Case
Packaging
DMN10H099SK3-13
TO252
2,500/Tape & Reel
Notes:
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
=Manufacturer’s Marking
N099SK= Product Type Marking Code
YYWW =DateCodeMarking
YY= Last Digit of Year (ex: 14 = 2014)
WW =Week Code (01 to 53)
N099SK
YYWW
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July 2014
© Diodes Incorporated
DMN10H099SK3
Document number: DS37263 Rev. 2 - 2
DMN10H099SK3
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Symbol
VDSS
Value
Units
100
±20
V
V
Gate-Source Voltage
VGSS
T
C = +25°C
17
13
A
Continuous Drain Current (Note 5) VGS = 10V
ID
TC = +70°C
Pulsed Drain Current (10μs pulse, duty cycle = 1%)
Avalanche Current, L = 1mH
20
7.5
A
A
IDM
IAS
Avalanche Energy, L = 1mH
28.5
mJ
EAS
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Units
34
TC = +25°C
TC = +70°C
Total Power Dissipation (Note 5)
W
PD
22
51
Thermal Resistance, Junction to Ambient (Note 5)
Thermal Resistance, Junction to Case (Note 5)
Operating and Storage Temperature Range
RθJA
°C/W
°C
3.6
RθJC
-55 to +150
T
J, TSTG
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
Symbol
Min
Typ
Max
Unit
Test Condition
100
V
BVDSS
IDSS
1
VGS = 0V, ID = 250µA
VDS = 80V, VGS = 0V
VGS = ±20V, VDS = 0V
µA
nA
±100
IGSS
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
1.5
2
67
3
V
mΩ
V
VGS(th)
RDS (ON)
VSD
VDS = VGS, ID = 250µA
80
99
V
V
GS = 10V, ID = 3.3A
GS = 6V, ID = 3A
Static Drain-Source On-Resistance
69
Diode Forward Voltage
0.77
VGS = 0V, IS = 3.2A
DYNAMIC CHARACTERISTICS (Note 6)
Input Capacitance
1172
40.8
31.3
1.6
Ciss
Coss
Crss
RG
Qg
Output Capacitance
pF
VDS = 50V, VGS = 0V, f = 1MHz
VDS = 0V, VGS = 0V, f = 1MHz
Reverse Transfer Capacitance
Gate Resistance
Ω
25.2
12.2
5.3
Total Gate Charge (VGS = 10V)
Total Gate Charge (VGS = 4.5V)
Gate-Source Charge
Qg
nC
VDS = 50V, ID = 3.3A
Qgs
Qgd
tD(on)
tr
Gate-Drain Charge
5.9
Turn-On Delay Time
5.4
Turn-On Rise Time
5.9
ns
V
DD = 50V, RG = 6.0Ω, ID = 3.3A
Turn-Off Delay Time
20
tD(off)
tf
Turn-Off Fall Time
7.3
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
19.7
15.9
ns
trr
IF = 3.3A, dI/dt = 100A/μs
nC
Qrr
Notes:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
6. Guaranteed by design. Not subject to product testing.
7. Short duration pulse test used to minimize self-heating effect.
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© Diodes Incorporated
DMN10H099SK3
Document number: DS37263 Rev. 2 - 2
DMN10H099SK3
20.0
16.0
12.0
8.0
10
9
8
7
6
5
4
3
2
1
0
V
= 10V
V
= 10V
GS
DS
V
= 5.0V
GS
V
= 6.0V
GS
V
= 4.5V
GS
T
= 150°C
A
T
= 125°C
A
V
= 4.0V
GS
4.0
T
= 25°C
A
T
= 85°C
A
T
= -55°C
A
V
= 3.5V
GS
0.0
0
1
2
3
4
5
1
2
3
4
5
VDS, DRAIN-SOURCE VOLTAGE (V)
VGS, GATE-SOURCE VOLTAGE (V)
Figure 1 Typical Output Characteristics
Figure 2 Typical Transfer Characteristics
0.1
0.08
0.06
0.04
0.02
0
0.5
0.4
0.3
0.2
0.1
0
I
= 3.0A
= 3.3A
D
I
D
V
V
= 6.0V
= 10V
GS
GS
2
4
6
8
10 12 14 16 18 20
0
2
4
6
8
10 12 14 16 18 20
VGS, GATE-SOURCE VOLTAGE (V)
Figure 4 Typical Transfer Characteristics
ID, DRAIN-SOURCE CURRENT (A)
Figure 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
0.16
0.14
0.12
0.10
0.08
0.06
0.04
0.02
0.00
3
V
= 10V
GS
T
= 150°C
A
2.5
2
T
= 125°C
A
V
= 5V
GS
I
= 1A
D
T
= 85°C
A
1.5
1
T
= 25°C
A
T
= -55°C
A
0.5
0
-50 -25
TJ, JUNCTION TEMPERATURE (
Figure 6 On-Resistance Variation with Temperature
0
25
50
75 100 125 150
0
1
2
3
4
5
6
7
8
9
10
C)
ID, DRAIN CURRENT (A)
Figure 5 Typical On-Resistance vs.
Drain Current and Temperature
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© Diodes Incorporated
DMN10H099SK3
Document number: DS37263 Rev. 2 - 2
DMN10H099SK3
0.15
0.12
0.09
0.06
0.03
0
2.5
2.2
1.9
1.6
1.3
1
V
= 5V
GS
I
= 1mA
D
I
= 1A
D
I
= 250µA
D
-50 -25
0
25
50
75 100 125 150
-50 -25
0
25
50
75 100 125 150
C)
TJ, JUNCTION TEMPERATURE (
Figure 7 On-Resistance Variation with Temperature
C)
TJ, JUNCTION TEMPERATURE (
Figure 8 Gate Threshold Variation vs. Ambient Temperature
10
9
10000
f = 1MHz
8
C
iss
7
1000
100
6
5
T
= 150°C
A
4
T
= 125°C
= 85°C
3
C
A
oss
T
= 25°C
A
2
C
rss
T
A
T
= -55°C
1
A
10
0
0
0.3
0.6
0.9
1.2
1.5
0
5
10
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 10 Typical Junction Capacitance
15
20
25
30
35
40
VSD, SOURCE-DRAIN VOLTAGE (V)
Figure 9 Diode Forward Voltage vs. Current
10
8
100
10
1
R
DS(on)
Limited
P
= 1µs
W
V
I
= 50V
DS
P
= 1s
W
= 3.3A
D
P
= 100ms
W
6
P
= 10ms
P
W
= 1ms
W
P
= 100µs
W
4
P
= 10µs
W
0.1
T
= 150°C
J(max)
2
T
V
= 25°C
A
= 10V
GS
Single Pulse
DUT on 1 * MRP Board
0.01
0
0
5
10
15
20
25
1
10
100
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 12 SOA, Safe Operation Area
Qg, TOTAL GATE CHARGE (nC)
Figure 11 Gate Charge
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© Diodes Incorporated
DMN10H099SK3
Document number: DS37263 Rev. 2 - 2
DMN10H099SK3
1
D = 0.9
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.1
D = 0.05
D = 0.02
D = 0.01
0.01
0.001
D = 0.005
RJA(t) = r(t) * R
RJA = 3.6°C/W
JA
D = Single Pulse
Duty Cycle, D = t1/ t2
0.000001
0.00001
0.0001
0.001
t1, PULSE DURATION TIME (sec)
Figure 13 Transient Thermal Resistance
0.01
0.1
1
10
Package Outline Dimensions
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for latest version.
E
A
b3
7° ±1°
c2
L3
TO252 (DPAK)
Dim Min Max Typ
A
2.19 2.39 2.29
D
A1 0.00 0.13 0.08
A2 0.97 1.17 1.07
A2
H
L4
b
0.64 0.88 0.783
b2 0.76 1.14 0.95
b3 5.21 5.46 5.33
c2 0.45 0.58 0.531
e
D
6.00 6.20 6.10
b
3x
D1 5.21
-
-
-
b2 2x
e
-
2.286
E
6.45 6.70 6.58
E1 4.32
-
-
Gauge Pl ane
D1
H
L
9.40 10.41 9.91
1.40 1.78 1.59
Seati ng Pl ane
E1
L
L3 0.88 1.27 1.08
L4 0.64 1.02 0.83
2. 74REF
a
0°
10°
-
All Dimensions in mm
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July 2014
© Diodes Incorporated
DMN10H099SK3
Document number: DS37263 Rev. 2 - 2
DMN10H099SK3
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
X1
Y1
Dimensions Value (in mm)
C
X
X1
Y
Y1
Y2
4.572
1.060
5.632
2.600
5.700
10.700
Y2
C
Y
X
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Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
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Copyright © 2014, Diodes Incorporated
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© Diodes Incorporated
DMN10H099SK3
Document number: DS37263 Rev. 2 - 2
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