DMN10H220LQ-7 [DIODES]
100V N-CHANNEL ENHANCEMENT MODE MOSFET;
| 型号： | DMN10H220LQ-7 |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | 100V N-CHANNEL ENHANCEMENT MODE MOSFET |
| 文件： | 总7页 (文件大小：401K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DMN10H220LQ
100V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features and Benefits
Low On-Resistance
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
PPAP Capable (Note 4)
ID max
BVDSS
RDS(ON) max
TA = +25°C
1.6A
1.3A
220mΩ @ VGS = 10V
250mΩ @ VGS = 4.5V
100V
Description and Applications
This MOSFET is designed to meet the stringent requirements of
Automotive applications. It is qualified to AEC-Q101, supported by a
PPAP and is ideal for use in:
Mechanical Data
Case: SOT23
Case Material: Molded Plastic, ―Green‖ Molding Compound,
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram
Load Switch
Terminals: Finish – Matte Tin Annealed over Copper Leadframe.
e3
Solderable per MIL-STD-202, Method 208
Weight: 0.009 grams (Approximate)
SOT23
D
D
G
S
G
S
Top View
Pin Configuration
Equivalent Circuit
Ordering Information (Note 5)
Part Number
DMN10H220LQ-7
DMN10H220LQ-13
Case
SOT23
SOT23
Packaging
3,000/Tape & Reel
10,000/Tape & Reel
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green‖ products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Refer to http://www.diodes.com/product_compliance_definitions.html.
5. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
N1H = Marking Code
YM = Date Code Marking
Y or Y = Year (ex: D = 2016)
M = Month (ex: 9 = September)
Date Code Key
Year
2016
2017
2018
2019
2020
2021
2022
Code
D
E
F
G
H
I
J
Month
Code
Jan
1
Feb
2
Mar
3
Apr
4
May
5
Jun
6
Jul
7
Aug
8
Sep
9
Oct
O
Nov
N
Dec
D
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November 2016
© Diodes Incorporated
DMN10H220LQ
Document number: DS39122 Rev. 2 - 2
DMN10H220LQ
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Symbol
VDSS
Value
100
Units
V
V
Gate-Source Voltage
±16
VGSS
TA = +25C
TA = +70C
TA = +25C
TA = +70C
1.6
1.3
(Note 7)
A
A
ID
ID
Continuous Drain Current (Note 6) VGS = 10V
1.4
1.1
(Note 6)
Maximum Continuous Body Diode Forward Current (Note 7)
0.6
8
A
A
IS
Pulsed Drain Current (10μs pulse, duty cycle = 1%)
IDM
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
1.3
Units
TA = +25°C
Total Power Dissipation (Note 7)
TA = +70°C
W
PD
0.8
(Note 6)
94
177
-55 to +150
Thermal Resistance, Junction to Ambient
(Note 7)
Operating and Storage Temperature Range
°C/W
°C
RθJA
TJ, TSTG
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
Symbol
Min
Typ
Max
Unit
Test Condition
100
—
—
—
—
—
1
V
BVDSS
IDSS
VGS = 0V, ID = 250μA
μA
nA
VDS = 100V, VGS = 0V
VGS = ±16V, VDS = 0V
—
±100
IGSS
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
1
—
—
2.5
220
250
1.2
V
mΩ
V
VGS(TH)
RDS(ON)
VSD
VDS = VGS, ID = 250μA
VGS = 10V, ID = 1.6A
VGS = 4.5V, ID = 1.3A
VGS = 0V, IS = 1.1A
Static Drain-Source On-Resistance
—
—
—
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
0.7
—
—
—
—
—
—
—
—
—
—
—
—
—
—
401
22
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Ciss
Coss
Crss
Rg
VDS = 25V, VGS = 0V
f = 1MHz
Output Capacitance
pF
Reverse Transfer Capacitance
Gate Resistance
17
2.1
4.1
8.3
1.5
2
Ω
VDS = 0V, VGS = 0V, f = 1MHz
Total Gate Charge (VGS = 4.5V)
Total Gate Charge (VGS = 10V)
Gate-Source Charge
Qg
Qg
nC
ns
VDS = 50V, ID = 1.6A
Qgs
Qgd
tD(ON)
tR
Gate-Drain Charge
Turn-On Delay Time
6.8
8.2
7.9
3.6
17
Turn-On Rise Time
VDS = 50V, VGS = 4.5V,
RG = 6.8Ω,ID = 1A
Turn-Off Delay Time
tD(OFF)
tF
Turn-Off Fall Time
Reverse Recovery Time
Reverse Recovery Charge
ns
tRR
IF = 1.1A, di/dt =100A/μs
9.8
nC
QRR
Notes:
6. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
7. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1inch square copper plate.
8 .Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to production testing.
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November 2016
© Diodes Incorporated
DMN10H220LQ
Document number: DS39122 Rev. 2 - 2
DMN10H220LQ
10.0
9.0
8.0
7.0
6.0
5.0
4.0
3.0
2.0
1.0
0.0
10
9
V
= 10V
DS
V
= 6.0V
GS
V
= 10V
8
GS
V
= 9.0V
7
GS
V
= 5.0V
GS
V
= 8.0V
GS
6
T
= 150°C
V
= 4.5V
A
GS
5
T
= 125°C
A
4
V
= 4.0V
GS
T
= 85°C
A
3
T
= 25°C
A
2
T
= -55°C
A
V
= 3.5V
1
GS
0
0
0.5
1
1.5
2
2.5
3
1
2
3
4
5
6
7
8
VDS, DRAIN-SOURCE VOLTAGE (V)
VGS, GATE-SOURCE VOLTAGE (V)
Figure 1 Typical Output Characteristic
Figure 2 Typical Transfer Characteristics
0.4
0.35
0.3
0.25
0.2
V
V
= 4.5V
= 10V
GS
GS
I
= 200mA
0.15
0.1
D
I
= 100mA
0.05
0
D
0
1
2
3
4
5
6
7
8
9
10
2
4
6
8
10 12 14 16 18 20
VGS, GATE-SOURCE VOLTAGE (V)
ID, DRAIN-SOURCE CURRENT (A)
Figure 4 Typical Transfer Characteristic
Figure 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
3
0.70
0.60
0.50
0.40
0.30
0.20
V
= 4.5V
GS
2.5
2
V
= 10V
GS
= 10A
I
D
T
A
= 150°C
1.5
V
= 4.5V
= 5A
GS
T
A
= 125°C
= 85°C
I
D
1
T
A
T
A
= 25°C
0.5
0
0.10
T
A
= -55°C
0.00
-50 -25
0
25
50
75 100 125 150
0
1
2
3
4
5
6
7
8
9
10
ID, DRAIN CURRENT (A)
TJ, JUNCTION TEMPERATURE (C)
Figure 6 On-Resistance Variation with Temperature
Figure 5 Typical On-Resistance vs.
Drain Current and Temperature
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© Diodes Incorporated
DMN10H220LQ
Document number: DS39122 Rev. 2 - 2
DMN10H220LQ
0.5
0.4
0.3
0.2
0.1
0
2.5
2.2
1.9
1.6
1.3
1
I
= 1mA
D
V
= 4.5V
= 5A
GS
I
I
= 250µA
D
D
V
= 10V
GS
I
= 10A
D
-50 -25
0
25
50
75 100 125 150
TJ , JUNCTION TEMPERATURE (C)
-50 -25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (C)
Figure 8 Gate Threshold Variation vs. Junction Temperature
Figure 7 On-Resistance Variation with Temperature
1000
100
10
10
9
8
7
6
5
4
3
2
1
0
C
iss
T
= 150°C
A
T
= 125°C
A
T
T
= 85°C
= 25°C
A
C
C
A
oss
rss
T
= -55°C
A
f = 1MHz
0
5
10
15
20
25
30
35
40
0
0.3
0.6
0.9
1.2
1.5
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 10 Typical Junction Capacitance
VSD, SOURCE-DRAIN VOLTAGE (V)
Figure 9 Diode Forward Voltage vs. Current
10
8
V
I
= 50V
DS
= 1.6A
D
6
4
2
0
0
2
4
6
8
10
Qg, TOTAL GATE CHARGE (nC)
Figure 11 Gate Charge
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November 2016
© Diodes Incorporated
DMN10H220LQ
Document number: DS39122 Rev. 2 - 2
DMN10H220LQ
1
D = 0.9
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.1
D = 0.05
D = 0.02
D = 0.01
D = 0.005
0.01
RθJA (t)=r(t) * RθJA
RθJA=172℃/W
D = Single Pulse
Duty Cycle, D=t1/t2
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100 1000
t1, PULSE DURATION TIME (sec)
Figure 12 Transient Thermal Resistance
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November 2016
© Diodes Incorporated
DMN10H220LQ
Document number: DS39122 Rev. 2 - 2
DMN10H220LQ
Package Outline Dimensions
Please see http://www.diodes.com/package-outlines.html for the latest version.
SOT23
All 7°
H
SOT23
GAUGE PLANE
Dim
A
B
C
D
F
G
H
Min
0.37
1.20
2.30
0.89
0.45
1.78
2.80
Max
0.51
1.40
2.50
1.03 0.915
0.60 0.535
Typ
0.40
1.30
2.40
0.25
J
K
K1
a
M
A
2.05
3.00
1.83
2.90
0.05
L
L1
J
0.013 0.10
K
K1
L
L1
M
a
0.890 1.00 0.975
0.903 1.10 1.025
C
B
0.45
0.25
0.61
0.55
0.55
0.40
0.085 0.150 0.110
0° 8° --
D
All Dimensions in mm
G
F
Suggested Pad Layout
Please see http://www.diodes.com/package-outlines.html for the latest version.
SOT23
Y
Dimensions Value (in mm)
C
X
2.0
0.8
X1
Y
1.35
0.9
Y1
C
Y1
2.9
X
X1
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© Diodes Incorporated
DMN10H220LQ
Document number: DS39122 Rev. 2 - 2
DMN10H220LQ
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2016, Diodes Incorporated
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© Diodes Incorporated
DMN10H220LQ
Document number: DS39122 Rev. 2 - 2
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