DMN2065UW [DIODES]
Low On-Resistance;
| 型号： | DMN2065UW |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | Low On-Resistance |
| 文件： | 总6页 (文件大小：204K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DMN2065UW
20V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features and Benefits
•
•
•
•
•
•
Low On-Resistance
Low Input Capacitance
Fast Switching Speed
Lead Free By Design/RoHS Compliant (Note 1)
"Green" Device (Note 2)
I
D max
V(BR)DSS
RDS(ON) max
TA = 25°C
56mΩ @ VGS = 4.5V
65mΩ @ VGS = 2.5V
93mΩ @ VGS = 1.8V
140mΩ @ VGS = 1.5V
2.8A
2.6A
20V
Qualified to AEC-Q101 standards for High Reliability
2.2A
1.8A
Mechanical Data
Description and Applications
This MOSFET has been designed to minimize the on-state resistance
(RDS(on)) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
•
•
Case: SOT323
Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
•
•
•
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections Indicator: See diagram
Terminals: Finish ⎯ Matte Tin annealed over Alloy42 leadframe.
Solderable per MIL-STD-202, Method 208
•
•
•
•
General Purpose Interfacing Switch
Power Management Functions
DC-DC Converters
•
Weight: 0.027 grams (approximate)
Analog Switch
Drain
SOT323
D
Gate
G
S
Source
Equivalent Circuit
Top View
Top View
Ordering Information (Note 3)
Part Number
Case
Packaging
DMN2065UW-7
SOT323
3000/Tape & Reel
Notes:
1. No purposefully added lead.
2. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com.
3. For packaging details, go to our website at http://www.diodes.com.
Marking Information
DMH = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: Y = 2011)
DMH
M = Month (ex: 9 = September)
Date Code Key
Year
2011
2012
2013
2014
2015
2016
2017
Code
Y
Z
A
B
C
D
E
Month
Code
Jan
1
Feb
2
Mar
3
Apr
4
May
5
Jun
6
Jul
7
Aug
8
Sep
9
Oct
O
Nov
N
Dec
D
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October 2011
© Diodes Incorporated
DMN2065UW
Document number: DS35554 Rev. 1 – 2
DMN2065UW
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Drain-Source Voltage
Symbol
VDSS
Value
20
Units
V
V
Gate-Source Voltage
±12
VGSS
T
T
A = 25°C
A = 70°C
Steady
State
2.8
2.3
A
A
A
A
ID
ID
ID
ID
Continuous Drain Current (Note 5) VGS = 4.5V
TA = 25°C
TA = 70°C
3.1
2.6
t<10s
T
T
A = 25°C
A = 70°C
Steady
State
2.2
1.7
Continuous Drain Current (Note 5) VGS = 1.8V
TA = 25°C
TA = 70°C
2.4
1.9
t<10s
Pulsed Drain Current (10us pulse, duty cycle=1%)
Maximum Body Diode Forward Current (Note 4)
30
A
A
IDM
IS
1.2
Thermal Characteristics @TA = 25°C unless otherwise specified
Characteristic
Symbol
PD
Value
Units
W
°C/W
°C/W
W
°C/W
°C/W
°C
Total Power Dissipation (Note 4)
0.43
296
252
0.7
178
151
Steady state
Thermal Resistance, Junction to Ambient (Note 4)
Total Power Dissipation (Note 5)
Rθ
JA
t<10s
PD
Rθ
Steady state
t<10s
Thermal Resistance, Junction to Ambient (Note 5)
Operating and Storage Temperature Range
JA
-55 to +150
TJ, TSTG
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
Symbol
Min
Typ
Max
Unit
Test Condition
20
-
-
-
-
-
V
BVDSS
IDSS
VGS = 0V, ID = 1mA
VDS = 20V, VGS = 0V
VGS = ±10V, VDS = 0V
1
μA
μA
Zero Gate Voltage Drain Current
Gate-Source Leakage
@Tc = 25°C
-
±1
IGSS
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
0.35
-
1.0
56
65
93
140
-
V
VGS(th)
VDS = VGS, ID = 250μA
-
-
-
-
-
-
52
59
60
75
7
VGS = 4.5V, ID = 2A
V
GS = 2.5V, ID = 2A
mΩ
Static Drain-Source On-Resistance
RDS (ON)
VGS = 1.8V, ID = 1A
VGS = 1.5V, ID = 0.5A
VDS = 5V, ID = 3.8A
VGS = 0V, IS = 1A
Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
S
V
|Yfs|
VSD
0.7
1.0
-
-
-
-
-
-
-
-
-
-
400.0
73.8
65.6
5.4
-
-
-
-
-
-
-
-
-
-
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
Ciss
Coss
Crss
Qg
V
DS = 10V, VGS = 0V,
Output Capacitance
f = 1.0MHz
Reverse Transfer Capacitance
Total Gate Charge
V
GS = 4.5V, VDS = 10V,
Gate-Source Charge
0.7
Qgs
Qgd
tD(on)
tr
I
D = 6A
Gate-Drain Charge
1.4
Turn-On Delay Time
3.5
V
DD = 10V, VGS = 5V,
Turn-On Rise Time
9.7
RL = 1.7ꢀ, RG = 6ꢀ,
Turn-Off Delay Time
23.8
7.2
tD(off)
tf
Turn-Off Fall Time
Notes:
4. Device mounted on FR-4 substrate PC board, with minimum recommended pad layout.
5. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate.
6. Short duration pulse test used to minimize self-heating effect.
7. Guaranteed by design. Not subject to product testing.
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www.diodes.com
October 2011
© Diodes Incorporated
DMN2065UW
Document number: DS35554 Rev. 1 – 2
DMN2065UW
10
8
5
4
V
= 8.0V
GS
V
= 4.5V
V
= 5.0V
GS
DS
V
= 3.0V
GS
V
= 2.5V
GS
V
= 2.0V
GS
V
= 1.5V
6
4
3
2
GS
T
= 150°C
A
T
= 125°C
2
0
1
0
A
T
= 85
°
C
A
T
= 25
°
C
A
V
= 1.2V
GS
T
= -55
°
C
A
0
0.5
1.0
1.5
2.0
2.5
3.0
0
0.5
1.0
1.5
2.0
VGS, GATE-SOURCE VOLTAGE (V)
VDS, DRAIN -SOURCE VOLTAGE(V)
Fig. 1 Typical Output Characteristics
Fig. 2 Typical Transfer Characteristics
0.08
0.07
0.14
0.12
V
= 4.5V
GS
0.06
0.05
0.10
0.08
0.06
0.04
T
T
= 150
= 125
°
°
C
C
A
A
0.04
0.03
0.02
T
= 85°C
A
T
= 25°C
A
T
= -55°C
A
0.02
0
0.01
0
0
1
2
3
4
5
1
2
3
4
5
6
7
8
ID, DRAIN SOURCE CURRENT (A)
ID, DRAIN SOURCE CURRENT (A)
Fig. 4 Typical On-Resistance vs.
Drain Current and Temperature
Fig. 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
1.8
1.6
0.08
0.07
0.06
0.05
0.04
0.03
0.02
V
I
= 2.5V
1.4
1.2
1.0
GS
= 5A
D
V
I
= 4.5V
GS
= 10A
D
0.8
0.6
0.01
0
-50 -25
TJ, JUNCTION TEMPERATURE (
Fig. 5 On-Resistance Variation with Temperature
0
25
50
75 100 125 150
-50 -25
TJ, JUNCTION TEMPERATURE (
Fig. 6 On-Resistance Variation with Temperature
0
25
50
75 100 125 150
°
C)
°
C)
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October 2011
© Diodes Incorporated
DMN2065UW
Document number: DS35554 Rev. 1 – 2
DMN2065UW
1.4
1.2
5
4
1.0
0.8
3
2
0.6
0.4
1
0
0.2
0
-50 -25
TA, AMBIENT TEMPERATURE (°C)
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
0
25
50
75 100 125 150
0
0.2
0.4
0.6
0.8
1.0
1.2
VSD, SOURCE-DRAIN VOLTAGE (V)
Fig. 8 Diode Forward Voltage vs. Current
1,000
100
10
1
T
= 150°C
= 125°C
A
T
C
A
iss
T
= 85°C
A
100
C
oss
0.1
C
rss
0.01
T
= 25°C
f = 1MHz
A
T
= -55°C
A
0.001
10
0
4
8
12
16
20
0
2
4
6
8
10 12 14 16 18 20
VDS, DRAIN-SOURCE VOLTAGE(V)
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 10 Typical Drain-Source Leakage Current vs. Voltage
100
Fig. 9 Typical Junction Capacitance
10
9
f = 1MHz
R
DS(on)
Limited
8
7
6
5
4
3
2
1
10
DC
1
P
= 10s
W
P
= 1s
W
P
= 100ms
W
P
= 10ms
W
P
= 1ms
0.1
W
P
= 100µs
W
P
= 10µs
W
0.01
0
0
3
6
9
12
15
0.1
1
10
100
Qg, TOTAL GATE CHARGE (nC)
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 11 Gate-Charge Characteristics
Fig. 12 SOA, Safe Operation Area
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October 2011
© Diodes Incorporated
DMN2065UW
Document number: DS35554 Rev. 1 – 2
DMN2065UW
1
D = 0.7
D = 0.5
D = 0.3
D = 0.9
0.1
D = 0.1
D = 0.05
D = 0.02
D = 0.01
D = 0.005
0.01
R
R
(t) = r(t) * R
θJA
= 300°C/W
θ
JA
θJA
Duty Cycle, D = t1/ t2
Single Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1,000
t1, PULSE DURATION TIMES (sec)
Fig. 13 Transient Thermal Resistance
Package Outline Dimensions
A
SOT323
Min Max
Dim
A
B
C
D
G
H
J
K
L
Typ
C
B
0.25
1.15
2.00
-
0.40
1.35
2.20
-
0.30
1.30
2.10
0.65
1.30
2.15
0.05
1.00
0.30
0.11
-
G
H
1.20
1.80
0.0
0.90
0.25
0.10
0°
1.40
2.20
0.10
1.00
0.40
0.18
8°
K
M
J
M
α
L
D
All Dimensions in mm
Suggested Pad Layout
Y
Dimensions Value (in mm)
Z
X
Y
C
E
2.8
0.7
0.9
1.9
1.0
Z
C
E
X
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October 2011
© Diodes Incorporated
DMN2065UW
Document number: DS35554 Rev. 1 – 2
DMN2065UW
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2011, Diodes Incorporated
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October 2011
© Diodes Incorporated
DMN2065UW
Document number: DS35554 Rev. 1 – 2
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