DMN2112SN-7 [DIODES]
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR; N沟道增强型网络场效晶体管
| 型号： | DMN2112SN-7 |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
| 文件： | 总3页 (文件大小：223K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DMN2112SN
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Features
A
•
•
Low On-Resistance
Ideal for Notebook Computer, Portable Phone, PCMCIA
Cards, and Battery Powered Circuits
SC-59
D
Dim
A
B
C
D
E
Min
0.30
1.40
2.50
0.85
0.30
1.70
2.70
⎯
Max
0.50
1.80
3.00
1.05
0.70
2.10
3.10
0.10
1.40
0.70
0.35
8°
B
C
•
•
•
•
Lead Free By Design/RoHS Compliant (Note 2)
Qualified to AEC-Q101 Standards for High Reliability
ESD Protected Gate
TOP VIEW
S
G
D
G
E
"Green" Device (Note 3)
H
Mechanical Data
•
•
K
M
G
H
J
Case: SC-59
J
L
Case Material - Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminals: Finish Matte Tin annealed over Copper
leadframe. Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram
Marking Information: See Page 3
Drain
•
•
K
L
1.00
0.55
0.10
0°
Gate
•
•
•
•
M
α
Gate
Protection
Diode
Source
Ordering & Date Code Information: See Page 3
Weight: 0.008 grams (approximate)
All Dimensions in mm
ESD Protected
EQUIVALENT CIRCUIT
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Symbol
VDSS
VGSS
Value
20
± 8
1.2
4.0
500
Units
V
V
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Continuous
Continuous
Pulsed
A
ID
Total Power Dissipation
mW
°C /W
°C
Pd
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
250
Rθ
JA
-55 to +150
Tj, TSTG
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 1)
Drain-Source Breakdown Voltage
Symbol
Min
Typ
Max
Unit
Test Condition
20
⎯
⎯
V
BVDSS
IDSS
⎯
⎯
⎯
⎯
10
VGS = 0V, ID = 250µA
µA
µA
VDS = 20V, VGS = 0V
Zero Gate Voltage Drain Current
Gate-Body Leakage
@ Tj = 25°C
IGSS
± 10
VGS = ± 8V, VDS = 0V
ON CHARACTERISTICS (Note 1)
Gate Threshold Voltage
0.5
1.2
V
VGS(th)
⎯
⎯
VDS = 10V, ID = 1.0mA
VGS = 4.5V, ID = 0.5A
VGS = 2.5V, ID = 0.5A
VGS = 1.5V, ID = 0.1A
0.10
0.14
0.25
Static Drain-Source On-Resistance
RDS (ON)
⎯
Ω
Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS
Input Capacitance
4.2
0.8
S
V
IYfsI
VSD
⎯
⎯
⎯
1.1
VDS = 10V, ID =0.5A
V
GS = 0V, IS = 1A
220
120
45
pF
pF
pF
Ciss
Coss
Crss
⎯
⎯
⎯
⎯
⎯
⎯
VDS = 10V, VGS = 0V
f = 1.0MHz
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Turn-On Delay Time
10
75
15
65
ns
ns
ns
ns
tD(ON)
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Turn-Off Delay Time
tD(OFF)
VDD = 5V, ID = 0.5A,
VGS = 10V, RGEN = 50Ω
Turn-On Rise Time
tr
tf
Turn-Off Fall Time
Notes:
1. Pulse width ≤ 300μs, duty cycle ≤ 2%.
2. No purposefully added lead.
3. Diodes Inc.'s "Green" Policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
DS30830 Rev. 3 - 2
1 of 3
DMN2112SN
© Diodes Incorporated
www.diodes.com
DS30830 Rev. 3 - 2
2 of 3
DMN2112SN
© Diodes Incorporated
www.diodes.com
Ordering Information (Note 4)
Packaging
Shipping
Device
SC-59
3000/Tape & Reel
DMN2112SN-7
Notes:
4. For packaging details, please go to our website at http://www.diodes.com/ap02007.pdf.
Marking Information
NS1 = Product Type Marking Code
YM = Date Code Marking
Y = Year ex: T = 2006
M = Month ex: 9 = September
NS1
Date Code Key
2006
2007
2008
2009
2010
2011
2012
Year
T
U
V
W
X
Y
Z
Code
Aug
Sep
Oct
Nov
Dec
Month
Code
Jan
Feb
Mar
Apr
May
Jun
Jul
8
9
O
N
D
1
2
3
4
5
6
7
IMPORTANT NOTICE
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product
described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall
assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website,
harmless against all damages.
LIFE SUPPORT
Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written
approval of the President of Diodes Incorporated.
DS30830 Rev. 3 - 2
3 of 3
DMN2112SN
© Diodes Incorporated
www.diodes.com
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