DMN26D0UDJ-7 [DIODES]
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET; 双N沟道增强型MOSFET
| 型号： | DMN26D0UDJ-7 |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | DUAL N-CHANNEL ENHANCEMENT MODE MOSFET |
| 文件： | 总5页 (文件大小：107K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DMN26D0UDJ
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features and Benefits
•
•
Dual N-Channel MOSFET
Low On-Resistance:
ID
V(BR)DSS
RDS(on)
TA = 25°C
•
•
•
•
3.0 Ω @ 4.5V
4.0 Ω @ 2.5V
6.0 Ω @ 1.8V
10 Ω @ 1.5V
240mA
170mA
3.0mΩ @ VGS= 4.5V
6.0mΩ @ VGS= 1.8V
20V
•
•
•
•
•
•
Very Low Gate Threshold Voltage, 1.05V max
Low Input Capacitance
Fast Switching Speed
Ultra-Small Surface Mount Package
ESD Protected Gate (HBM 300V)
Description and Applications
This new generation MOSFET has been designed to minimize the on-
state resistance (RDS(on)) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
Lead, Halogen, and Antimony Free By Design/RoHS
Compliant (Note 1)
•
"Green" Device (Note 2)
•
•
DC-DC Converters
Power management functions
Mechanical Data
•
•
Case: SOT-963
Case Material: Molded Plastic, “Green” Molding Compound. UL
Flammability Classification Rating 94V-0
•
•
•
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram
Terminals: Finish – Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
•
Weight: 0.0027 grams (approximate)
D1
G2
S2
SOT-963
Top View
D2
G1
S1
ESD PROTECTED
Top View
Schematic and Transistor Diagram
Ordering Information (Note 3)
Part Number
DMN26D0UDJ-7
Case
SOT-963
Packaging
10,000/Tape & Reel
Notes:
1. No purposefully added lead.
2. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com.
3. For packaging details, go to our website at http://www.diodes.com.
Marking Information (Note 4)
D1
G2
S2
M1 = Product Type Marking Code
M1
D2
G1
S1
Notes:
4. Package is non-polarized. Parts may be on reel in orientation illustrated, 180° rotated, or mixed (both ways).
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© Diodes Incorporated
DMN26D0UDJ
Document number: DS31481 Rev. 5 - 2
DMN26D0UDJ
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Drain Source Voltage
Symbol
VDSS
Value
20
Unit
V
Gate-Source Voltage
V
VGSS
±10
T
A = 25°C
Steady
Continuous Drain Current (Note 5) VGS = 4.5V
State
240
190
mA
ID
TA = 70°C
T
T
A = 25°C
A = 70°C
Steady
Continuous Drain Current (Note 5) VGS = 1.8V
State
180
140
mA
mA
ID
805
Pulsed Drain Current - TP = 10µs
IDM
Thermal Characteristics
Characteristic
Total Power Dissipation (Note 5)
Symbol
Value
300
409
Unit
mW
°C/W
°C
PD
Thermal Resistance, Junction to Ambient (Note 5)
Operating and Storage Temperature Range
Rθ
JA
-55 to +150
TJ, TSTG
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 6)
Symbol
Min
Typ
Max
Unit
Test Condition
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
20
V
BVDSS
IDSS
⎯
⎯
⎯
500
VGS = 0V, ID = 100μA
VDS = 20V, VGS = 0V
VGS = ±10V, VDS = 0V
VGS = ±5V, VDS = 0V
nA
@ TC = 25°C
⎯
±1
±100
μA
nA
Gate-Body Leakage
IGSS
⎯
⎯
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
0.45
⎯
⎯
⎯
⎯
0.8
1.8
2.5
3.4
4.7
9.5
240
0.8
1.05
3.0
4.0
6.0
10.0
⎯
V
VGS(th)
VDS = VGS, ID = 250μA
VGS = 4.5V, ID = 100mA
VGS = 2.5V, ID = 50mA
VGS = 1.8V, ID = 20mA
VGS = 1.5V, ID = 10mA
Static Drain-Source On-Resistance
RDS (ON)
Ω
⎯
180
VGS = 1.2V, ID = 1mA
Forward Transconductance
Source-Drain Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
mS
V
|Yfs|
VSD
⎯
1.0
VDS =10V, ID = 0.1A
VGS = 0V, IS = 10mA
0.5
14.1
2.9
pF
pF
pF
Ciss
Coss
Crss
⎯
⎯
⎯
⎯
⎯
⎯
V
DS = 15V, VGS = 0V
Output Capacitance
f = 1.0MHz
Reverse Transfer Capacitance
1.6
SWITCHING CHARACTERISTICS, VGS = 4.5V (Note 7)
Turn-On Delay Time
Rise Time
3.8
7.9
td(on)
tr
td(off)
tf
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
VGS = 4.5V, VDD = 10V
ID = 200mA, RG = 2.0Ω
ns
Turn-Off Delay Time
Fall Time
13.4
15.2
Notes:
5. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch with minimum recommended pad layout; pad layout as shown on Diodes Inc. suggested
pad layout document AP02001, which can be found on our website at http://www.diodes.com.
6. Short duration pulse test used to minimize self-heating effect.
7. Switching characteristics are independent of operating junction temperature. Guaranteed by design, not subject to production testing.
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© Diodes Incorporated
DMN26D0UDJ
Document number: DS31481 Rev. 5 - 2
DMN26D0UDJ
0.8
0.7
0.4
0.3
V
= -10V
V
= 8V
DS
V
= 4.5V
GS
GS
T
= -55°C
A
0.6
0.5
V
= 3.0V
= 2.5V
T
= 25°C
GS
A
T
= 85°C
A
T
= 125°C
A
V
0.2
0.1
0
0.4
0.3
0.2
GS
T
= 150°C
A
V
= 2.0V
GS
0.1
0
V
= 1.5V
GS
0
0.5
1
1.5
2
2.5
3
0
0.5
1
1.5
2
2.5
3
VGS, GATE-SOURCE VOLTAGE (V)
Fig. 2 Typical Transfer Characteristic
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 1 Typical Output Characteristic
10
9
4
3
2
V
= 4.5V
GS
8
7
6
5
4
T
= 150°C
A
V
= 1.2V
GS
T
= 125°C
A
T
= 85°C
A
V
= 1.5V
T
= 25°C
3
2
GS
A
1
0
V
= 1.8V
= 2.5V
GS
T
= -55°C
A
V
V
GS
1
0
= 4.5V
GS
1
10
100
1,000
0.01
0.1
1
ID, DRAIN-SOURCE CURRENT (mA)
Fig. 3 Typical On-Resistance
vs. Drain Current and Gate Voltage
ID, DRAIN CURRENT (A)
Fig. 4 Typical On-Resistance
vs. Drain Current and Temperature
2.0
1.8
4.0
3.5
1.6
1.4
V
I
= 4.5V
3.0
GS
= 500mA
D
2.5
2.0
1.5
V
= 2.5V
GS
1.2
1.0
I
= 150mA
V
= 2.5V
GS
D
I
= 150mA
D
0.8
V
= 4.5V
GS
1.0
0.5
I
= 500mA
D
0.6
0.4
-50 -25
0
25
50
75 100 125 150
-50 -25
0
25
50
75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
Fig. 5 On-Resistance Variation with Temperature
TA, AMBIENT TEMPERATURE (°C)
Fig. 6 On-Resistance Variation with Temperature
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© Diodes Incorporated
DMN26D0UDJ
Document number: DS31481 Rev. 5 - 2
DMN26D0UDJ
0.8
0.7
1.4
1.2
T
= 25°C
0.6
0.5
A
1.0
0.8
0.6
0.4
I
= 1mA
D
0.4
0.3
I
= 250µA
D
0.2
0.2
0
0.1
0
-50 -25
0
25
50
75 100 125 150
0
0.2 0.4
0.6 0.8
1
1.2 1.4 1.6
TA, AMBIENT TEMPERATURE (°C)
VSD, SOURCE-DRAIN VOLTAGE (V)
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
Fig. 8 Diode Forward Voltage vs. Current
20
10,000
1,000
f = 1MHz
T
= 150°C
A
15
T
= 125°C
A
C
iss
100
10
5
T
= 85°C
A
10
1
T
= 25°C
C
A
oss
T
= -55°C
A
C
rss
0
0.1
0
5
10
15
20
0
2
4
6
8
10 12 14 16 18 20
VDS, DRAIN-SOURCE VOLTAGE (V)
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 9 Typical Total Capacitance
Fig. 10 Typical Leakage Current vs. Drain-Source Voltage
Package Outline Dimensions
D
e1
SOT-963
L
Dim Min
Max Typ
A
A1
c
0.40
0
0.50 0.45
0.05
-
E
E1
0.120 0.180 0.150
D
E
E1
L
b
0.95
0.95
0.75
0.05
0.10
1.05 1.00
1.05 1.00
0.85 0.80
0.15 0.10
0.20 0.15
e
c
b (6 places)
e
e1
0.35 Typ
0.70 Typ
A
All Dimensions in mm
A1
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December 2010
© Diodes Incorporated
DMN26D0UDJ
Document number: DS31481 Rev. 5 - 2
DMN26D0UDJ
Suggested Pad Layout
C
C
Dimensions Value (in mm)
C
X
Y
0.350
0.200
0.200
1.100
Y1
Y1
Y (6X)
X (6X)
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INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
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application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
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Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
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Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
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use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2010, Diodes Incorporated
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© Diodes Incorporated
DMN26D0UDJ
Document number: DS31481 Rev. 5 - 2
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