DMN3005LK3 [DIODES]
N-CHANNEL ENHANCEMENT MODE MOSFET; N沟道增强型MOSFET
| 型号： | DMN3005LK3 |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | N-CHANNEL ENHANCEMENT MODE MOSFET |
| 文件： | 总6页 (文件大小：214K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DMN3005LK3
N-CHANNEL ENHANCEMENT MODE MOSFET
Features
Mechanical Data
•
•
•
•
•
•
•
•
Low On-Resistance
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
ESD Protected
Lead Free By Design/RoHS Compliant (Note 1)
"Green" Device (Note 2)
•
•
Case: TO252-3L
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals Connections: See Diagram
Terminals: Matte Tin Finish annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.33 grams (approximate)
•
•
•
•
Qualified to AEC-Q101 Standards for High Reliability
D
D
D
G
S
G
S
Equivalent Circuit
TOP VIEW
PIN OUT -TOP VIEW
Ordering Information (Note 3)
Part Number
Case
Packaging
DMN3005LK3-13
TO252-3L
2500 / Tape & Reel
Notes:
1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com.
3. For packaging details, go to our website at http://www.diodes.com.
Marking Information
= Manufacturer’s Marking
N3005L = Product Type Marking Code
YYWW = Date Code Marking
YY = Year (ex: 09 = 2009)
N3005L
YYWW
WW = Week (01 - 53)
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October 2010
© Diodes Incorporated
DMN3005LK3
Document number: DS33318 Rev. 2 - 2
DMN3005LK3
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Drain-Source Voltage
Symbol
VDSS
Value
30
Unit
V
Gate-Source Voltage
±20
V
VGSS
T
A = 25°C
Steady
Continuous Drain Current (Note 4) VGS = 10V
State
14.5
10.5
A
ID
TA = 85°C
T
T
A = 25°C
A = 85°C
Steady
Continuous Drain Current (Note 5) VGS = 10V
State
22
16
A
A
ID
Pulsed Drain Current (Note 6)
48
IDM
Thermal Characteristics
Characteristic
Power Dissipation (Note 4)
Symbol
PD
Value
1.68
74.3
4.1
Unit
W
Thermal Resistance, Junction to Ambient @TA = 25°C (Note 4)
Power Dissipation (Note 5)
°C/W
W
RθJA
PD
Thermal Resistance, Junction to Ambient @TA = 25°C (Note 5)
Operating and Storage Temperature Range
30.8
°C/W
RθJA
-55 to +150
°C
TJ, TSTG
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Symbol
Min
Typ
Max
Unit
Test Condition
30
-
-
-
-
-
V
BVDSS
IDSS
VGS = 0V, ID = 250μA
VDS = 30V, VGS = 0V
VGS = ±20V, VDS = 0V
1.0
μA
nA
Zero Gate Voltage Drain Current TJ = 25°C
Gate-Source Leakage
-
±100
IGSS
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
1.0
-
1.5
2.0
V
VGS(th)
VDS = VGS, ID = 250μA
VGS = 10V, ID = 20A
VGS = 4.5V, ID = 20A
VDS = 15V, ID = 15A
VGS = 0V, IS = 20A
3.6
4.9
5.0
6.5
Static Drain-Source On-Resistance
mΩ
RDS (ON)
Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
-
-
22
-
S
V
|Yfs|
VSD
0.8
1.0
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
4342
1801
669
pF
pF
pF
Ω
Ciss
Coss
Crss
Rg
VDS = 15V, VGS = 0V,
f = 1.0MHz
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
1.76
46.9
14.3
18.6
7.9
VDS = 0V, VGS = 0V, f = 1MHz
Total Gate Charge
nC
nC
nC
ns
ns
ns
ns
Qg
VGS = 4.5V, VDS = 15V,
ID = 15A
Gate-Source Charge
Gate-Drain Charge
Qgs
Qgd
tD(on)
tr
Turn-On Delay Time
Turn-On Rise Time
22.8
73.4
43.5
V
DS = 15V, VGS = 10V,
Turn-Off Delay Time
RL = 1.3Ω RG = 3Ω
tD(off)
tf
Turn-Off Fall Time
Notes:
4. Device mounted on FR-4 PCB, with minimum recommended pad layout, single sided.
5. Device mounted on 2” x 2” FR-4 PCB with high coverage 2oz. copper, single sided.
6. Repetitive rating, pulse width limited by junction temperature and current limited by package.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.
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© Diodes Incorporated
DMN3005LK3
Document number: DS33318 Rev. 2 - 2
DMN3005LK3
30
25
50
40
V
= 4.5V
GS
V = 5.0V
DS
V
= 3.5V
GS
V
= 3.0V
GS
V
= 2.8V
GS
20
15
10
30
20
V
= 2.5V
GS
T
= 150°C
A
T
= 125°C
A
T
= 85°C
A
T
= 25°C
A
T
= -55°C
A
10
0
5
0
V
= 1.8V
GS
V
= 2.0V
GS
0
0.5
VGS, GATE SOURCE VOLTAGE(V)
Fig. 2 Typical Transfer Characteristics
1
1.5
2
2.5
3
3.5
4
0
1
2
3
4
5
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig.1 Typical Output Characteristics
0.012
0.010
0.040
0.036
V
= 4.5V
GS
0.032
0.028
0.024
0.020
0.016
0.012
0.008
0.008
0.006
0.004
T
= 150°C
A
T
= 125°C
= 85°C
A
V
= 2.5V
T
GS
A
T
= 25°C
A
T
= -55°C
A
0.002
0
0.004
0
V
= 4.5V
GS
0
5
10
15
20
25
30
0
5
10
15
20
25
30
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
Fig. 3 Typical On-Resistance
vs. Drain Current and Gate Voltage
Fig. 4 Typical Drain-Source On-Resistance
vs. Drain Current and Temperature
0.010
0.009
1.0
0.8
0.008
0.007
0.6
0.006
0.005
0.004
0.003
0.002
I
= 1mA
D
0.4
0.2
0
I
= 250µA
D
V
= 4.5A
GS
I
= 20A
D
0.001
0
-50 -25
0
25
50
75 100 125 150
C)
Fig. 5 On-Resistance Variation with Temperature
-50 -25
0
25
TA, AMBIENT TEMPERATURE (°C)
Fig. 6 Gate Threshold Variation vs. Ambient Temperature
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (
°
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© Diodes Incorporated
DMN3005LK3
Document number: DS33318 Rev. 2 - 2
DMN3005LK3
10,000
1,000
100
20
18
f = 1MHz
16
C
C
iss
T
= 25°C
A
14
12
oss
10
8
C
rss
6
4
2
0
0.2
0.4
0.6
0.8
1.0
1.2
0
5
10
15
20
25
30
VSD, SOURCE-DRAIN VOLTAGE (V)
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 8 Typical Capacitance
Fig. 7 Diode Forward Voltage vs. Current
1,000,000
100,000
T
T
= 150°C
= 125°C
A
10,000
1,000
100
A
T
= 85°C
= 25°C
A
10
1
T
A
0
5
10
15
20
25
30
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 9 Typical Drain-Source Leakage Current vs Voltage
1
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.1
D = 0.9
D = 0.05
R
(t) = r(t) * R
θJA
θJA
R
= 76°C/W
θ
JA
D = 0.02
D = 0.01
D = 0.005
0.01
P(pk)
t
1
t
2
T
- T = P * R (t)
J
A θJA
Duty Cycle, D = t /t
1
2
D = Single Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1,000
t1, PULSE DURATION TIME (s)
Fig. 10 Transient Thermal Response
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© Diodes Incorporated
DMN3005LK3
Document number: DS33318 Rev. 2 - 2
DMN3005LK3
Package Outline Dimensions
E
L3
b3
TO252-3L
Dim Min Typ
Max
2.39
1.17
0.88
1.14
5.50
0.58
6.20
6.70
A
A1
b
2.19 2.29
0.97 1.07
0.64 0.76
0.76 0.95
5.21 5.33
0.45 0.51
6.00 6.10
6.45 6.58
D
b2
b3
C2
D
b2
E
L4
e
e
H
2.286 Typ.
9.40 9.91 10.41
A
b
A1
H
L
1.40 1.59
0.88 1.08
0.64 0.83
1.78
1.27
1.02
10°
L3
L4
a
a
SEATING
PLANE
L
C2
0°
-
All Dimensions in mm
Suggested Pad Layout
X2
Dimensions
Value (in mm)
Y2
Z
11.6
1.5
7.0
2.5
7.0
6.9
2.3
X1
X2
Y1
Y2
C
Z
C
Y1
E1
X1
E1
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October 2010
© Diodes Incorporated
DMN3005LK3
Document number: DS33318 Rev. 2 - 2
DMN3005LK3
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2010, Diodes Incorporated
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October 2010
© Diodes Incorporated
DMN3005LK3
Document number: DS33318 Rev. 2 - 2
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