DMN3016LDN-7 [DIODES]
Power Field-Effect Transistor,;
| 型号： | DMN3016LDN-7 |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | Power Field-Effect Transistor, |
| 文件： | 总7页 (文件大小：343K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DMN3016LDN
30V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features
Low On-Resistance
ID MAX
TA = +25°C
Device
V(BR)DSS
RDS(ON) max
Low Input Capacitance
7.3A
6.7A
20mΩ @ VGS = 10V
24mΩ @ VGS = 4.5V
Fast Switching Speed
N-Channel
30V
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Description
Mechanical Data
This MOSFET is designed to minimize the on-state resistance
(RDS(ON)) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
Case: V-DFN3030-8
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram
Weight: 0.02 grams (Approximate)
Applications
DC Motor Control
DC-AC Inverters
V-DFN3030-8
D1
D2
Pin 1
G1
D1
8
7
6
5
1
2
3
4
S1
D2
D2
D1
S2
G2
G1
G2
S1
S2
Q1 N-Channel MOSFET
Q2 N-Channel MOSFET
Pin out Configuration
(Bottom View)
Top View
Bottom View
Equivalent Circuit
Ordering Information (Note 4)
Part Number
DMN3016LDN-7
DMN3016LDN-13
Case
V-DFN3030-8
V-DFN3030-8
Packaging
3000/Tape & Reel
10000/Tape & Reel
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http”//www.diodes.com/products/packages.html.
Marking Information
N16 = Product Type Marking Code
YYWW = Date Code Marking
YY = Last Digit of Year (ex: 13 for 2013)
WW = Week Code (01 ~ 53)
N16
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© Diodes Incorporated
DMN3016LDN
Document number: DS37307 Rev. 2 - 2
DMN3016LDN
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Symbol
VDSS
Value
30
Units
V
V
Gate-Source Voltage
±20
VGSS
Steady
State
TA = +25°C
TA = +70°C
TA = +25°C
TA = +70°C
7.3
5.8
A
A
ID
ID
Continuous Drain Current (Note 6) VGS = 10V
9.2
7.3
t<10s
Maximum Continuous Body Diode Forward Current (Note 6)
Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%)
Avalanche Current (Note 7) L = 0.1mH
2.5
45
22
24
A
A
IS
IDM
IAS
EAS
A
Avalanche Energy (Note 7) L = 0.1mH
mJ
Thermal Characteristics
Characteristic
Symbol
Value
1.1
119
75
1.6
78
Units
W
Total Power Dissipation (Note 5)
TA = +25°C
Steady State
t<10s
PD
RθJA
PD
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
°C/W
W
TA = +25°C
Steady State
t<10s
Thermal Resistance, Junction to Ambient (Note 6)
RθJA
49
13.5
°C/W
°C
Thermal Resistance, Junction to Case (Note 6)
Operating and Storage Temperature Range
RθJC
-55 to +150
TJ, TSTG
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
Symbol
Min
Typ
Max
Unit
Test Condition
30
-
-
-
-
-
1
V
BVDSS
IDSS
VGS = 0V, ID = 250μA
μA
nA
VDS = 30V, VGS = 0V
VGS = ±20V, VDS = 0V
-
±100
IGSS
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
1.4
-
2.0
20
V
mΩ
V
VGS(TH)
RDS(ON)
VSD
VDS = VGS, ID = 250μA
VGS = 10V, ID = 11A
VGS = 4.5V, ID = 9A
VGS = 0V, IS = 1A
-
-
-
-
-
Static Drain-Source On-Resistance
24
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
0.70
1.0
-
-
-
-
-
-
-
-
-
-
-
-
-
-
1415
119
82
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Ciss
Coss
Crss
Rg
VDS = 15V, VGS = 0V,
f = 1.0MHz
Output Capacitance
pF
Reverse Transfer Capacitance
Gate Resistance
2.6
Ω
VDS = 0V, VGS = 0V, f = 1.0MHz
11.3
25.1
3.5
Total Gate Charge (VGS = 4.5V)
Total Gate Charge (VGS = 10V)
Gate-Source Charge
Qg
Qg
nC
ns
VDS = 15V, ID = 12A
Qgs
Qgd
tD(ON)
tR
Gate-Drain Charge
3.6
Turn-On Delay Time
4.8
Turn-On Rise Time
16.5
26.1
5.6
VDD = 15V, VGS = 10V,
RL = 1.25Ω, RG = 3Ω
Turn-Off Delay Time
tD(OFF)
tF
Turn-Off Fall Time
Reverse Recovery Time
Reverse Recovery Charge
12.3
10.4
ns
tRR
IF = 12A, di/dt = 500A/μs
nC
Qrr
Notes:
5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1in. square copper plate.
7. IAS and EAS rating are based on low frequency and duty cycles to keep TJ = +25°C .
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.
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© Diodes Incorporated
DMN3016LDN
Document number: DS37307 Rev. 2 - 2
DMN3016LDN
30.0
25.0
20.0
15.0
10.0
5.0
30
25
20
15
10
5
VGS = 3.5V
VGS = 4.0V
VDS= 5.0V
VGS = 3.0V
VGS = 4.5V
TA = 150oC
TA = 125oC
VGS = 10.0V
TA = 25oC
TA = -55oC
TA = 85oC
VGS = 2.5V
VGS = 2.2V
0
0.0
0
0.5
1
1.5
2
2.5
3
3.5
4
0
0.5
1
1.5
2
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure1 Typical Output Characteristic
VGS, GATE-SOURCE VOLTAGE (V)
Figure 2 Typical Transfer Characteristic
0.03
0.025
0.02
0.015
0.01
0.005
0
0.03
0.02
0.01
0
VGS = 4.5V
TA = 150oC
TA = 125oC
VGS = 4.5V
VGS = 10V
TA = 85oC
TA = 25oC
TA = -55oC
0
5
10
15
20
25
30
0
5
10
15
20
25
30
ID, DRAIN CURRENT (A)
ID, DRAIN-SOURCE CURRENT (A)
Figure 3 Typical On-Resistance vs Drain Current
and Gate Voltage
Figure 4 Typical On-Resistance vs Drain Current
and Temperature
0.024
0.02
1.8
1.6
1.4
1.2
1
0.016
0.012
0.008
0.004
0
VGS = 4.5V, ID =5A
VGS = 4.5V,
ID =5A
VGS = 10V,
ID =10A
VGS = 10V, ID =10A
0.8
0.6
-50 -25
0
25
50
75 100 125 150
-50 -25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (℃)
Figure 6 On-Resistance Variation with Temperature
TJ, JUNCTION TEMPERATURE (℃)
Figure 5 On-Resistance Variation with
Temperature
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DMN3016LDN
Document number: DS37307 Rev. 2 - 2
DMN3016LDN
3
2.5
2
30
25
20
15
10
5
ID = 1mA
1.5
1
VGS = 0V, TA = 25oC
ID = 250µA
0.5
0
0
-50 -25
0
25
50
75 100 125 150
0
0.2
0.4
0.6
0.8
1
1.2
TJ, JUNCTION TEMPERATURE (℃)
Figure 7 Gate Theshold Variation vs Junction
Temperature
VSD, SOURCE-DRAIN VOLTAGE (V)
Figure 8 Diode Forward Voltage vs Current
10000
10
9
8
7
6
5
4
3
2
1
0
f=1MHz
1000
100
10
VDS = 15V, ID =12A
Ciss
Coss
Crss
0
2
4
6
8
10 12 14 16 18 20
0
5
10
Qg (nC)
Figure 10 Gate Charge
15
20
25
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 9 Typical Junction Capacitance
100
10
RDS(ON)
Limited
DC
PW =10s
1
PW =1s
PW =100ms
TJ(Max)=150℃
TA=25℃
VGS=10V
Single Pulse
0.1
0.01
PW =10ms
PW =1ms
PW =100µs
DUT on 1*MRP Board
0.1
1
10
100
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 11 SOA, Safe Operation Area
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DMN3016LDN
Document number: DS37307 Rev. 2 - 2
DMN3016LDN
1
D=0.9
D=0.7
D=0.5
0.1
D=0.3
D=0.1
D=0.05
D=0.02
D=0.01
D=0.005
0.01
0.001
RθJA(t)=r(t) * RθJA
RθJA=117℃/W
Duty Cycle, D=t1/t2
D=Single Pulse
0.0001
0.00001
0.001
0.01
0.1
1
10
100
1000
t1, PULSE DURATION TIME (sec)
Figure 12 Transient Thermal Resistance
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© Diodes Incorporated
DMN3016LDN
Document number: DS37307 Rev. 2 - 2
DMN3016LDN
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version.
A1
A3
A
Seating Plane
V-DFN3030-8
(Type J)
Dim
Min
Max
Typ
D
A
A1
A3
b
0.77
0.00
0.83 0.80
0.05 0.02
0.203 BSC
0.30 0.25
D/2
e
PIN1# ID
0.20
D
2.95 3.050 3.00
D2a
k
D2
D2a
E
0.90
0.90
1.10 1.00
1.10 1.00
L
E2
2.95 3.050 3.00
E2
E2a
e
1.72
1.72
1.92 1.82
1.92 1.82
0.65BSC
E
E2a
L
La
k
0.27
0.15
0.38 0.33
0.25 0.20
0.35 TYP
0.40 BSC
D2
E/2
z
All Dimensions in mm
b
z
La
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
Value
Dimensions
Y1
(in mm)
0.650
0.250
0.550
0.350
1.100
1.100
1.225
2.375
0.530
0.300
1.920
1.920
1.650
3.300
C
G
G1
X
G1
Y2
Y4
Y3
X1
X2
X3
X4
Y
Y1
Y2
Y3
Y4
Y5
Y5
X1
G
X
X2
Y
X3
C
X4
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DMN3016LDN
Document number: DS37307 Rev. 2 - 2
DMN3016LDN
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
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indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
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This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2015, Diodes Incorporated
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© Diodes Incorporated
DMN3016LDN
Document number: DS37307 Rev. 2 - 2
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