DMN3030LSS [DIODES]
SINGLE N-CHANNEL ENHANCEMENT MODE MOSFET; 单N沟道增强型MOSFET
| 型号： | DMN3030LSS |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | SINGLE N-CHANNEL ENHANCEMENT MODE MOSFET |
| 文件： | 总6页 (文件大小：174K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DMN3030LSS
SINGLE N-CHANNEL ENHANCEMENT MODE MOSFET
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Features
Mechanical Data
•
Low On-Resistance
•
•
Case: SO-8
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020D
Terminals Connections: See Diagram
Terminals: Finish - Matte Tin annealed over Copper lead frame.
Solderable per MIL-STD-202, Method 208
Marking Information: See Page 4
Ordering Information: See Page 4
Weight: 0.072g (approximate)
•
•
18mΩ @ VGS = 10V
30mΩ @ VGS = 4.5V
•
•
•
•
•
•
•
•
•
•
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Lead Free By Design/RoHS Compliant (Note 2)
"Green" Device (Note 4)
Qualified to AEC-Q101 Standards for High Reliability
•
•
•
SO-8
S
D
S
S
G
D
D
D
TOP VIEW
Internal Schematic
TOP VIEW
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Drain-Source Voltage
Symbol
VDSS
Value
30
Units
V
V
Gate-Source Voltage
VGSS
±25
T
A = 25°C
Drain Current (Note 1)
Steady
State
9
6.75
A
A
ID
TA = 70°C
Pulsed Drain Current (Note 3)
40
IDM
Thermal Characteristics
Characteristic
Total Power Dissipation (Note 1)
Symbol
Value
2.5
Unit
W
PD
Thermal Resistance, Junction to Ambient
50
°C/W
Rθ
JA
Operating and Storage Temperature Range
-55 to +150
°C
TJ, TSTG
Notes:
1. Device mounted on 2 oz copper pad layout with RθJA = 50°C/W.
2. No purposefully added lead.
3. Pulse width ≤10μS, Duty Cycle ≤1%.
4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
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© Diodes Incorporated
DMN3030LSS
Document number: DS31261 Rev. 10 - 2
DMN3030LSS
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 5)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Symbol
Min
Typ
Max
Unit
Test Condition
30
V
BVDSS
IDSS
⎯
⎯
⎯
1
VGS = 0V, ID = 250μA
VDS = 30V, VGS = 0V
⎯
μA
nA
μA
VGS = ±20V, VDS = 0V
⎯
⎯
⎯
⎯
±100
±1
Gate-Source Leakage
IGSS
V
GS = ±25V, VDS = 0V
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
1
2.1
V
VGS(th)
⎯
15.7
26.4
VDS = VGS, ID = 250μA
VGS = 10V, ID = 9A
VGS = 4.5V, ID = 7A
VDS = 10V, ID = 9A
VGS = 0V, IS = 2.1A
18
30
Static Drain-Source On-Resistance
RDS (ON)
⎯
mΩ
Forward Transconductance
Diode Forward Voltage (Note 5)
DYNAMIC CHARACTERISTICS
Input Capacitance
5.8
0.7
S
V
gfs
⎯
0.5
⎯
1.2
VSD
741
124
95
pF
pF
pF
Ω
Ciss
Coss
Crss
RG
⎯
⎯
⎯
⎯
⎯
⎯
VDS = 15V, VGS = 0V
f = 1.0MHz
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
0.30
0.88
1.5
VDS = 0V, VGS = 0V, f = 1.0MHz
SWITCHING CHARACTERISTICS
7.6
16.7
1.9
12
25
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
V
DS = 15V, VGS = 4.5V, ID = 9A
= 15V, V = 10V, ID = 9A
Qg
Total Gate Charge
nC
ns
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Qgs
Qgd
td(on)
tr
V
DS
GS
5.2
4.0
4.4
VGS = 10V, VDS = 15V,
RL = 15Ω, RG = 6Ω
Turn-Off Delay Time
Fall Time
23.0
9.4
td(off)
tf
Notes:
5. Short duration pulse test used to minimize self-heating effect.
16
14
18
V
= 10V
15
12
9
GS
V
= 5V
V
= 4.5V
DS
12
10
8
GS
6
6
4
V
V
= 3.0V
GS
3
0
2
0
= 2.5V
GS
1.5
2
2.5
VGS, GATE SOURCE VOLTAGE (V)
Fig. 2 Typical Transfer Characteristics
3
3.5
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 1 Typical Output Characteristic
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© Diodes Incorporated
DMN3030LSS
Document number: DS31261 Rev. 10 - 2
DMN3030LSS
0.03
0.02
0.06
0.05
0.04
V
= 4.5V
GS
V
= 4.5V
GS
T
= 150°C
A
T
T
= 125°C
= 85°C
A
V
= 10V
GS
A
0.03
0.02
0.01
T
= 25°C
0.01
A
A
T
= -55°C
0
0
3
6
9
12
15
0.1
1
10
100
ID, DRAIN-SOURCE CURRENT (A)
ID, DRAIN-SOURCE CURRENT (A)
Fig. 3 Typical On-Resistance
Fig. 4 Typical On-Resistance
vs. Drain Current and Gate Voltage
vs. Drain Current and Temperature
1.6
1.5
0.03
V
= 10V
GS
1.4
1.3
1.2
T
T
= 150°C
0.025
A
V
= 10V
GS
I
= 10A
D
= 125°C
= 85°C
A
V
= 4.5V
= 5A
GS
T
I
A
0.02
D
1.1
1.0
T
T
= 25°C
A
0.015
0.01
0.9
0.8
0.7
= -55°C
A
-50
0
50
TJ, JUNCTION TEMPERATURE (°C)
Fig. 6 On-Resistance Variation with Temperature
100
150
0
3
6
9
12
15
ID, DRAIN-SOURCE CURRENT (A)
Fig. 5 Typical On-Resistance
vs. Drain Current and Temperature
2.5
2.2
10,000
1,000
I
= 250µA
D
1.9
1.6
1.3
1
100
10
0
5
10
15
20
25
30
-50 -25
0
25
50
75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 8 Total Capacitance
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
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© Diodes Incorporated
DMN3030LSS
Document number: DS31261 Rev. 10 - 2
DMN3030LSS
100
10
1
V
= 150°C
GS
V
= 125°C
0.1
GS
V
= 85°C
GS
0.01
V
= 25°C
GS
V
= -55°C
0.001
GS
0.0001
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
VSD, SOURCE-DRAIN VOLTAGE (V)
1
Fig. 9 Diode Forward Voltage vs. Current
1
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.9
D = 0.1
D = 0.05
D = 0.02
R
(t) = r(t) * R
θJA
θ
R
JA
= 90°C/W
θ
JA
0.01
P(pk)
D = 0.01
t
1
t
2
D = 0.005
T
- T = P * R (t)
J
A θJA
Duty Cycle, D = t /t
1
2
D = Single Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1,000
t1, PULSE DURATION TIME (s)
Fig. 10 Transient Thermal Response
Ordering Information (Note 6)
Part Number
DMN3030LSS-13
Case
SO-8
Packaging
2500/Tape & Reel
Notes:
6. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
Top View
8
5
Logo
N3030LS
YY WW
Part no.
Xth week: 01~52
Year: "07" =2007
"08" =2008
1
4
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© Diodes Incorporated
DMN3030LSS
Document number: DS31261 Rev. 10 - 2
DMN3030LSS
Package Outline Dimensions
SO-8
Min
-
0.10
1.30
0.15
0.3
Dim
A
A1
A2
A3
b
Max
1.75
0.20
1.50
0.25
0.5
E1
E
Gauge Plane
Seating Plane
A1
L
Detail ‘A’
D
E
E1
e
4.85
5.90
3.85
4.95
6.10
3.95
7°~9°
h
°
45
1.27 Typ
h
L
θ
-
0.35
0.82
8°
Detail ‘A’
A2
A3
A
0.62
0°
b
e
All Dimensions in mm
D
Suggested Pad Layout
X
Dimensions Value (in mm)
X
Y
C1
C2
0.60
1.55
5.4
C1
1.27
C2
Y
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© Diodes Incorporated
DMN3030LSS
Document number: DS31261 Rev. 10 - 2
DMN3030LSS
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2009, Diodes Incorporated
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© Diodes Incorporated
DMN3030LSS
Document number: DS31261 Rev. 10 - 2
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