DMN6013LFG-7 [DIODES]
Small Signal Field-Effect Transistor,;
| 型号： | DMN6013LFG-7 |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | Small Signal Field-Effect Transistor, 开关 光电二极管 晶体管 |
| 文件： | 总6页 (文件大小：321K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DMN6013LFG
60V N-CHANNEL ENHANCEMENT MODE MOSFET
POWERDI®
Product Summary
Features and Benefits
•
•
Low RDS(ON) – ensures on state losses are minimized
Small form factor thermally efficient package enables higher
density end products
ID max
TA = +25°C
10.3A
V(BR)DSS
RDS(ON) max
13mΩ @ VGS = 10V
18mΩ @ VGS = 4.5V
60V
8.8A
•
Occupies just 33% of the board area occupied by SO-8 enabling
smaller end product
•
•
•
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Description
This MOSFET has been designed to minimize the on-state resistance
(RDS(ON)) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
Mechanical Data
•
•
Case: POWERDI®3333-8
Applications
Case Material: Molded Plastic, "Green" Molding Compound
Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections Indicator: See diagram
UL
•
•
•
Backlighting
•
•
•
Power Management Functions
DC-DC Converters
Terminals: Finish ⎯ Matte Tin annealed over Copper leadframe
Solderable per MIL-STD-202, Method 208
•
Weight: 0.072 grams (approximate)
POWERDI®3333-8
D
Pin 1
S
S
S
G
G
D
D
D
D
S
Bottom View
Top View
Equivalent Circuit
Ordering Information (Note 4)
Part Number
DMN6013LFG-7
DMN6013LFG-13
Case
Packaging
2,000/Tape & Reel
POWERDI®3333-8
POWERDI®3333-8
3,000/Tape & Reel
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http”//www.diodes.com/products/packages.html.
Marking Information
N63= Product Type Marking Code
YYWW = Date Code Marking
YY = Last digit of year (ex: 13 = 2013)
WW = Week code (01 ~ 53)
N63
POWERDI is a registered trademark of Diodes Incorporated.
1 of 6
www.diodes.com
June 2014
© Diodes Incorporated
DMN6013LFG
Document number: DS36958 Rev. 1 - 2
DMN6013LFG
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Symbol
VDSS
Value
60
Units
V
V
Gate-Source Voltage
±20
VGSS
T
A = +25°C
10.3
8.3
A
A
ID
ID
TA = +70°C
TC = +25°C
Continuous Drain Current (Note 6) VGS = 10V
45
28
TC = +100°C
Pulsed Drain Current (10µs pulse, duty cycle = 1%)
Maximum Continuous Body Diode Forward Current (Note 6)
Avalanche Current, L = 0.1mH
58.3
3
A
A
IDM
IS
33.3
56.8
A
IAS
EAS
Avalanche Energy, L = 0.1mH
mJ
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
PD
Value
Units
Total Power Dissipation (Note 5)
1
W
Steady state
123
69
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
°C/W
W
Rθ
JA
t < 10s
2.1
60
PD
Rθ
Steady state
t < 10s
Thermal Resistance, Junction to Ambient (Note 6)
°C/W
JA
34
Total Power Dissipation (Note 6)
40
W
°C/W
°C
PD
Rθ
Thermal Resistance, Junction to Case (Note 6)
Operating and Storage Temperature Range
6.7
JC
-55 to +150
TJ, TSTG
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Symbol
Min
Typ
Max
Unit
Test Condition
60
—
—
—
—
—
—
1
V
BVDSS
IDSS
VGS = 0V, ID = 250μA
VDS = 60V, VGS = 0V
VGS = ±20V, VDS = 0V
µA
nA
Zero Gate Voltage Drain Current, TJ = +25°C
Gate-Source Leakage
±100
IGSS
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
1
1.8
9.3
3
V
mΩ
V
VGS(th)
RDS(ON)
VSD
VDS = VGS, ID = 250μA
—
—
—
13
18
1.2
VGS = 10V, ID = 10A
Static Drain-Source On-Resistance
12.3
0.7
V
GS = 4.5V, ID = 8A
Diode Forward Voltage
VGS = 0V, IS = 1.7A
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
pF
pF
pF
Ω
Ciss
Coss
Crss
Rg
2577
162
V
DS = 30V, VGS = 0V,
Output Capacitance
f = 1MHz
Reverse Transfer Capacitance
Gate Resistance
132
0.9
VDS = 0V, VGS = 0V, f = 1MHz
26.6
55.4
9.3
nC
nC
nC
nC
ns
ns
ns
ns
nS
nC
Total Gate Charge (VGS = 4.5V)
Total Gate Charge (VGS = 10V)
Gate-Source Charge
Qg
Qg
VDS = 30V, ID = 10A
Qgs
Qgd
tD(on)
tr
12.6
6.2
Gate-Drain Charge
Turn-On Delay Time
9.9
Turn-On Rise Time
V
GS = 10V, VDS = 30V,
27.6
11.7
9.4
Turn-Off Delay Time
RG = 3Ω, ID = 10A
tD(off)
tf
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
trr
IF = 10A, di/dt = 100A/μs
18.6
Qrr
Notes:
5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
POWERDI is a registered trademark of Diodes Incorporated.
2 of 6
www.diodes.com
June 2014
© Diodes Incorporated
DMN6013LFG
Document number: DS36958 Rev. 1 - 2
DMN6013LFG
30
27
24
21
18
15
12
9
30
25
20
15
10
5
V
= 5.0V
V
= 10V
DS
GS
V
= 4.5V
GS
V
= 4.0V
GS
V
= 3.5V
GS
T
= 150°C
A
T
= 85°C
A
T
A
= 125°C
6
T
= 25°C
A
3
T
= -55°C
V
= 3.0V
A
GS
0
0
1
1.5
2
2.5
3
3.5
4
4.5
5
0
0.5
1
1.5
2
2.5
3
VGS, GATE-SOURCE VOLTAGE (V)
Figure 2 Typical Transfer Characteristics
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1 Typical Output Characteristics
0.014
0.012
0.01
0.03
0.025
0.02
I
= 10A
D
V
= 4.5V
GS
I
= 8mA
D
V
= 10V
GS
0.015
0.01
0.008
0.006
0.005
0
5
10
15
20
25
30
0
2
4
6
8
10 12 14 16 18 20
ID, DRAIN-SOURCE CURRENT (A)
Figure 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
VGS, GATE-SOURCE VOLTAGE (V)
Figure 4 Typical Drain-Source On-Resistance
vs. Gate-Source Voltage
0.024
0.022
0.02
2.2
2
V
= 10V
GS
V
= 10V
GS
T
= 150°C
A
I
= 10A
D
T
= 125°C
1.8
1.6
1.4
1.2
1
A
0.018
0.016
0.014
0.012
0.01
T
= 85°C
V
= 4.5V
= 8A
A
GS
I
D
T
= 25°C
T
A
0.008
0.006
0.004
0.002
0
= -55°C
A
0.8
0.6
0.4
-50 -25
TJ, JUNCTION TEMPERATURE (
Figure 6 On-Resistance Variation with Temperature
0
25
50
75 100 125 150
0
2
4
6
8
10 12 14 16 18 20
°
C)
ID, DRAIN CURRENT (A)
Figure 5 Typical On-Resistance vs.
Drain Current and Temperature
POWERDI is a registered trademark of Diodes Incorporated.
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© Diodes Incorporated
DMN6013LFG
Document number: DS36958 Rev. 1 - 2
DMN6013LFG
0.028
0.024
0.02
2.4
2.2
2
V
= 4.5V
= 8A
GS
I
= 1mA
D
I
D
1.8
1.6
1.4
1.2
1
I
= 250µA
D
0.016
0.012
0.008
0.004
0
V
= 10V
GS
I
= 10A
D
0.8
-50 -25
0
25
50
75 100 125 150
C)
-50 -25
TJ, JUNCTION TEMPERATURE (
Figure 7 On-Resistance Variation with Temperature
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (
°
°
C)
Figure 8 Gate Threshold Variation vs. Ambient Temperature
30
25
20
15
10
5
10000
C
iss
T
= 150°C
1000
A
T
A
= 125°C
A
T
= 25°C
A
T
= 85°C
C
T
= -55°C
oss
A
C
f = 1MHz
rss
0
0
100
0.2
0.4
0.6
0.8
1
1.2
1.4
0
5
10
15
20
25
30
35
40
VSD, SOURCE-DRAIN VOLTAGE (V)
Figure 9 Diode Forward Voltage vs. Current
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 10 Typical Junction Capacitance
10
8
100
10
1
R
DS(on)
Limited
DC
P
= 10s
P
W
6
= 1s
W
V
I
= 30V
DS
P
= 100ms
W
= 10A
D
P
= 10ms
W
0.1
0.01
4
P
= 1ms
W
P
= 100µs
W
T
T
= 150°C
J(max)
2
= 25°C
A
V
= 10V
GS
Single Pulse
DUT on 1 * MRP Board
0.001
0
0
0.01
0.1
1
10
100
6
12 18 24 30 36 42 48 54 60
Qg, TOTAL GATE CHARGE (nC)
Figure 11 Gate Charge
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 12 SOA, Safe Operation Area
POWERDI is a registered trademark of Diodes Incorporated.
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June 2014
© Diodes Incorporated
DMN6013LFG
Document number: DS36958 Rev. 1 - 2
DMN6013LFG
1
D = 0.9
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.1
D = 0.05
D = 0.02
D = 0.01
0.01
D = 0.005
RθJA(t) = r(t) * Rθ
RθJA = 126°C/W
JA
Duty Cycle, D = t1/ t2
D = Single Pulse
0.001
0.0001
0.001
0.01
0.1
t1, PULSE DURATION TIME (sec)
Figure 13 Transient Thermal Resistance
1
10
100
1000
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version.
POWERDI®3333-8
Dim Min Max Typ
A
A3
D
E
3.25 3.35 3.30
3.25 3.35 3.30
A1
D
D2 2.22 2.32 2.27
E2 1.56 1.66 1.61
D2
L
(4x)
A
A1
A3
b
b2
L
0.75 0.85 0.80
0
−
0.05 0.02
0.203
1
8
4
5
Pin 1 ID
E2
−
0.27 0.37 0.32
0.20
0.35 0.45 0.40
b2
(4x)
E
−
−
L1
e
Z
0.39
0.65
0.515
−
−
−
−
−
−
L1
(3x)
All Dimensions in mm
Z (4x)
e
b (8x)
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
X
Dimensions
Value (in mm)
0.650
G
C
G
0.230
8
5
4
G1
Y
Y1
Y2
Y3
X
0.420
3.700
2.250
1.850
0.700
2.370
0.420
Y2
Y3
G1
Y1
Y
1
X2
X2
C
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DMN6013LFG
Document number: DS36958 Rev. 1 - 2
DMN6013LFG
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2013, Diodes Incorporated
www.diodes.com
POWERDI is a registered trademark of Diodes Incorporated.
6 of 6
www.diodes.com
June 2014
© Diodes Incorporated
DMN6013LFG
Document number: DS36958 Rev. 1 - 2
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