DMN6040SFDE [DIODES]
Low On-Resistance;
| 型号： | DMN6040SFDE |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | Low On-Resistance |
| 文件： | 总6页 (文件大小：201K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DMN6040SFDE
60V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features and Benefits
•
•
•
•
•
•
•
100% Unclamped Inductive Switch (UIS) test in production
0.6mm profile – ideal for low profile applications
PCB footprint of 4mm2
ID max
TA = +25°C
Package
V(BR)DSS
RDS(ON) max
6.5A
5.2A
38mΩ @ VGS = 10V
47mΩ @ VGS = 4.5V
U-DFN2020-6
Type E
Low On-Resistance
60V
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. "Green" Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Description
This new generation MOSFET has been designed to minimize the on-
state resistance (RDS(on)) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
Mechanical Data
•
•
Case: U-DFN2020-6 Type E
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
•
•
Moisture Sensitivity: Level 1 per J-STD-020
Applications
Terminals: Finish – NiPdAu over Copper leadframe. Solderable
e4
per MIL-STD-202, Method 208
•
•
General Purpose Interfacing Switch
Power Management Functions
•
Weight: 0.0065 grams (approximate)
Drain
U-DFN2020-6 Type E
Pin1
Gate
Source
Bottom View
Pin Out
Equivalent Circuit
Bottom View
Ordering Information (Note 4)
Part Number
DMN6040SFDE-7
DMN6040SFDE-13
Marking
N8
Reel size (inches)
Quantity per reel
3,000
7
13
N8
10,000
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com.
Marking Information
N8 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: Y = 2011)
M = Month (ex: 9 = September)
Date Code Key
Year
2011
2012
2013
2014
2015
2016
2017
Code
Y
Z
A
B
C
D
E
Month
Code
Jan
1
Feb
2
Mar
3
Apr
4
May
5
Jun
6
Jul
7
Aug
8
Sep
9
Oct
O
Nov
N
Dec
D
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August 2012
© Diodes Incorporated
DMN6040SFDE
Datasheet number: DS35792 Rev. 8 - 2
DMN6040SFDE
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Symbol
VDSS
Value
60
Units
V
V
Gate-Source Voltage
±20
VGSS
T
T
A = +25°C
A = +70°C
Steady
State
5.3
4.1
A
A
ID
Continuous Drain Current (Note 6) VGS = 10V
TA = +25°C
TA = +70°C
6.5
5.1
t<10s
ID
IDM
IS
Pulsed Drain Current (10µs pulse, duty cycle = 1%)
Maximum Body Diode Continuous Current
Avalanche Current (Note 7) L = 0.1mH
30
2.5
14.2
10
A
A
A
IAR
EAR
Avalanche Energy (Note 7) L = 0.1mH
mJ
Thermal Characteristics
Characteristic
Symbol
PD
Value
0.66
Units
T
A = +25°C
Total Power Dissipation (Note 5)
W
0.42
189
132
2.03
1.31
61
TA = +70°C
Steady state
t<10s
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
°C/W
W
Rθ
JA
TA = +25°C
PD
TA = +70°C
Steady state
t<10s
Thermal Resistance, Junction to Ambient (Note 6)
Rθ
JA
43
°C/W
°C
Thermal Resistance, Junction to Case (Note 6)
Operating and Storage Temperature Range
9.3
Rθ
JC
-55 to +150
TJ, TSTG
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
Symbol
Min
Typ
Max
Unit
Test Condition
60
⎯
⎯
V
BVDSS
IDSS
⎯
⎯
⎯
⎯
100
VGS = 0V, ID = 250µA
VDS = 60V, VGS = 0V
nA
nA
IGSS
±100
VGS = ±20V, VDS = 0V
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
1
3
V
VGS(th)
⎯
30
VDS = VGS, ID = 250µA
VGS = 10V, ID = 4.3A
VGS = 4.5V, ID = 4A
VDS = 10V, ID = 4.3A
VGS = 0V, IS = 1A
38
47
⎯
⎯
⎯
⎯
⎯
Static Drain-Source On-Resistance
RDS (ON)
mΩ
35
Forward Transfer Admittance
Diode Forward Voltage
4.5
0.7
S
V
|Yfs|
VSD
1.2
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
1287
57
Ciss
Coss
Crss
RG
Qg
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
V
DS = 25V, VGS = 0V
Output Capacitance
pF
f = 1.0MHz
Reverse Transfer Capacitance
Gate Resistance
44
1.2
Ω
VDS = 0V, VGS = 0V, f = 1.0MHz
22.4
10.4
4.9
Total Gate Charge (VGS = 10V)
Total Gate Charge (VGS = 4.5V)
Gate-Source Charge
Qg
nC
V
DS = 30V, ID = 4.3A
Qgs
Qgd
tD(on)
tr
Gate-Drain Charge
3.0
Turn-On Delay Time
6.6
Turn-On Rise Time
8.1
VGS = 10V, VDD = 30V, RG = 6Ω,
D = 4.3A
nS
Turn-Off Delay Time
20.1
4.0
I
tD(off)
tf
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
18
nS
nC
trr
IS = 4.3A, dI/dt = 100A/μs
IS = 4.3A, dI/dt = 100A/μs
11.9
Qrr
Notes:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7. IAR and EAR rating are based on low frequency and duty cycles to keep TJ = +25°C.
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.
2 of 6
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August 2012
© Diodes Incorporated
DMN6040SFDE
Datasheet number: DS35792 Rev. 8 - 2
DMN6040SFDE
20
16
20
16
V
= 5.0V
DS
12
8
12
8
T
= 150°C
A
T
= 125°C
A
T
= 85°C
A
4
0
4
0
T
= 25°C
A
T
= -55°C
A
0
1
2
3
4
5
0
0.5
1.0
1.5
2.0
2.5
3.0
VGS, GATE-SOURCE VOLTAGE (V)
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 2 Typical Transfer Characteristics
Fig. 1 Typical Output Characteristic
0.10
0.09
0.10
0.08
0.08
0.07
0.06
0.05
0.04
0.03
0.02
0.06
0.04
I
= 3.5A
I
= 4.5A
D
D
V
V
= 4.5V
= 10V
GS
GS
0.02
0
0.01
0
0
1
2
3
4
5
6
7
8
9
10
0
4
8
12
16
20
ID, DRAIN-SOURCE CURRENT (A)
VGS, GATE-SOURCE VOLTAGE (V)
Fig. 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
Fig. 4 Typical On-Resistance vs.
Drain Current and Gate Voltage
0.10
0.09
2.4
2.2
V
= 4.5V
GS
V
= 10V
GS
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
T
= 150°C
I
= 10A
0.08
0.07
0.06
0.05
0.04
0.03
0.02
A
D
T
= 125°C
= 85°C
A
V
= 4.5V
= 5A
GS
I
D
T
A
A
T
= 25°C
T
= -55°C
A
0.01
0
0.2
0
-50 -25
TJ, JUNCTION TEMPERATURE (
Fig. 6 On-Resistance Variation with Temperature
0
25
50
75 100 125 150
0
4
8
12
16
20
ID, DRAIN CURRENT (A)
°
C)
Fig. 5 Typical On-Resistance vs.
Drain Current and Temperature
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August 2012
© Diodes Incorporated
DMN6040SFDE
Datasheet number: DS35792 Rev. 8 - 2
DMN6040SFDE
4.0
3.5
0.10
0.08
3.0
2.5
2.0
1.5
1.0
V
= 4.5V
GS
0.06
0.04
I
= 500mA
D
I
= 1mA
D
I
= 250µA
D
V
= 2.5V
GS
I
= 200mA
D
0.02
0
0.5
0
-50 -25
0
25
50 75 100 125 150
C)
- 50 -25
0
25
50
75 100 125 150
C)
Fig. 7 On-Resistance Variation with Temperature
TJ, JUNCTION TEMPERATURE (
°
TJ, JUNCTION TEMPERATURE (
°
Fig. 8 Gate Threshold Variation vs. Ambient Temperature
20
16
C
iss
T
= 25°C
A
12
8
4
0
C
oss
C
rss
f = 1MHz
0
5
10
15
20
25
30
0
0.2
0.4
0.6
0.8
1.0
1.2
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 10 Typical Junction Capacitance
VSD, SOURCE-DRAIN VOLTAGE (V)
Fig. 9 Diode Forward Voltage vs. Current
100
10
V
= 30V
DS
I
= 4.3A
D
R
DS(on)
Limited
DC
1
P
= 10s
W
P
= 1s
W
P
= 100ms
W
P
= 10ms
W
0.1
P
= 1ms
TJ(max) = 150°C
TA = 25°C
W
P
= 100µs
W
VGS = -12V
Single Pulse
DUT on 1 * MRP Board
0.01
0
5
10
15
20
25
0.1
1
10
100
Qg, TOTAL GATE CHARGE (nC)
-VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 11 Gate Charge
Figure 12 SOA, Safe Operation Area
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August 2012
© Diodes Incorporated
DMN6040SFDE
Datasheet number: DS35792 Rev. 8 - 2
DMN6040SFDE
1
D = 0.7
D = 0.5
D = 0.3
D = 0.9
0.1
D = 0.1
D = 0.05
D = 0.02
D = 0.01
D = 0.005
0.01
RθJA(t) = r(t) * Rθ
RθJA = 61°C/W
JA
Duty Cycle, D = t1/ t2
Single Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1,000
t1, PULSE DURATION TIMES (sec)
Fig. 13 Transient Thermal Resistance
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
A3
U-DFN2020-6
Type E
A1
A
Dim
Min
Max
Typ
A
A1
A3
b
0.57
0
—
0.63
0.05
—
0.60
0.03
0.15
0.30
D
0.25
0.35
b1
D
D2
E
E2
e
L
L1
K1
K2
Z
0.185 0.285 0.235
1.95
0.85
1.95
1.40
—
2.05
1.05
2.05
1.60
—
2.00
0.95
2.00
1.50
0.65
0.30
0.87
0.305
0.225
0.20
b1
K1
D2
E
E2
L1
L(2X)
0.25
0.82
—
0.35
0.92
—
K2
—
—
—
—
Z(4X)
All Dimensions in mm
e
b(6X)
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August 2012
© Diodes Incorporated
DMN6040SFDE
Datasheet number: DS35792 Rev. 8 - 2
DMN6040SFDE
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
Value
(in mm)
0.650
0.400
0.285
1.050
0.500
0.920
1.600
2.300
Dimensions
C
X
X1
X2
Y
Y1
Y2
Y3
X2
Y1
Y3 Y2
X1
Y (2x)
X (6x)
C
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
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Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
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noted herein may also be covered by one or more United States, international or foreign trademarks.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2012, Diodes Incorporated
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August 2012
© Diodes Incorporated
DMN6040SFDE
Datasheet number: DS35792 Rev. 8 - 2
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