DMN62D0UDW-7 [DIODES]
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET;
| 型号： | DMN62D0UDW-7 |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | DUAL N-CHANNEL ENHANCEMENT MODE MOSFET |
| 文件： | 总7页 (文件大小：545K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DMN62D0UDW
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features
Dual N-Channel MOSFET
Low On-Resistance
ID max
TA = +25°C
BVDSS
RDS(ON) max
Low Gate Threshold Voltage
2Ω @ VGS = 4.5V
Low Input Capacitance
Fast Switching Speed
60V
350mA
2.5Ω @ VGS = 2.5V
Low Input/Output Leakage
Ultra-Small Surface Mount Package
ESD Protected Gate
Description
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
This MOSFET is designed to minimize the on-state resistance
(RDS(ON)) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
Mechanical Data
Applications
Case: SOT363
Case Material: Molded Plastic. “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Matte Tin Finish Annealed over Alloy 42 Leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram
Motor Control
Power Management Functions
Weight: 0.006 grams (Approximate)
SOT363
D2
D1
D2
G1
S1
G2
G1
ESD Protected Gate
Gate Protection
Diode
Gate Protection
Diode
S2
S1
S2
G2
D1
Top View
Q2 N-Channel
Q1 N-Channel
Top View
Pin out
Equivalent Circuit
Ordering Information (Note 4)
Part Number
DMN62D0UDW-7
DMN62D0UDW-13
Case
SOT363
SOT363
Packaging
3000/Tape & Reel
10000/Tape & Reel
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
LEE = Product Type Marking Code
YM = Date Code Marking
Y or Y = Year (ex: D = 2016)
M = Month (ex: 9 = September)
Date Code Key
Year
2016
2017
2018
2019
2020
2021
2022
2023
2024
2025
2026
2027
Code
D
E
F
G
H
I
J
K
L
M
N
O
Month
Code
Jan
1
Feb
2
Mar
3
Apr
4
May
5
Jun
6
Jul
7
Aug
8
Sep
9
Oct
O
Nov
N
Dec
D
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© Diodes Incorporated
DMN62D0UDW
Document number: DS38029 Rev. 2 - 2
DMN62D0UDW
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Symbol
VDSS
Value
60
Unit
V
Gate-Source Voltage
±20
V
VGSS
Steady
State
TA = +25°C
TA = +70°C
350
290
mA
A
Continuous Drain Current (Note 6) VGS = 4.5V
ID
IS
Maximum Continuous Body Diode Forward Current (Note 6)
0.4
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
320
Unit
mW
°C/W
mW
°C/W
°C
Total Power Dissipation (Note 5)
PD
RθJA
Steady State
Steady State
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
400
410
PD
Thermal Resistance, Junction to Ambient (Note 6)
Operating and Storage Temperature Range
312
RθJA
-55 to +150
TJ, TSTG
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Symbol Min Typ Max Unit
Test Condition
—
—
—
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
60
—
—
—
1.0
±10
V
BVDSS
IDSS
VGS = 0V, ID = 250µA
VDS = 60V, VGS = 0V
VGS = ±20V, VDS = 0V
µA
µA
IGSS
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
0.5
—
1.0
V
VGS(TH)
RDS(ON)
VDS = 10V, ID = 250µA
VGS = 4.5V, ID = 0.1A
VGS = 2.5V, ID = 0.05A
VGS = 1.8V, ID = 0.05A
VDS =10V, ID = 0.2A
VGS = 0V, IS = 115mA
1.2
1.4
1.8
2.0
2.5
3.0
Static Drain-Source On-Resistance
—
Ω
1.8
0.8
Forward Transconductance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
—
—
—
S
V
|Yfs|
VSD
1.3
—
—
—
—
—
—
—
—
—
—
—
32
3.9
—
—
—
—
—
—
—
—
—
—
—
pF
pF
pF
Ω
Ciss
Coss
Crss
Rg
VDS = 30V, VGS = 0V
f = 1.0MHz
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
2.4
101
0.5
f = 1MHz , VGS = 0V, VDS = 0V
Total Gate Charge
nC
nC
nC
ns
ns
Qg
VGS = 4.5V, VDS = 10V,
ID = 250mA
Gate-Source Charge
Gate-Drain Charge
0.09
0.09
2.4
Qgs
Qgd
tD(ON)
tR
Turn-On Delay Time
Turn-On Rise Time
2.5
VDD = 30V, VGS = 10V,
Turn-Off Delay Time
Turn-Off Fall Time
22.6
12.5
ns RG = 25Ω, ID = 200mA
tD(OFF)
tF
ns
Notes:
5. Device mounted on FR-4 PCB, with minimum recommended pad layout
6. Device mounted on 1” x 1” FR-4 PCB with high coverage 2oz. Copper, single sided.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
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© Diodes Incorporated
DMN62D0UDW
Document number: DS38029 Rev. 2 - 2
DMN62D0UDW
1.0
0.8
0.6
0.4
0.2
0.0
0.8
0.6
0.4
0.2
0
VDS=5V
VGS=2.5V
VGS=3.0V
VGS=4.5V
VGS=2.0V
VGS=1.8V
TA=125℃
TA=150℃
TA=85℃
TA=25℃
VGS=1.5V
VGS=1.3V
TA=-55℃
0
1
2
3
4
5
0.5
1
1.5
2
2.5
VDS, DRAIN-SOURCE VOLTAGE (V)
VGS, GATE-SOURCE VOLTAGE (V)
Figure 1. Typical Output Characteristic
Figure 2. Typical Transfer Characteristic
3
3
2.5
2
2.5
2
VGS=2.5V
1.5
1
VGS=4.5V
1.5
1
ID=100mA
0.5
0
0
5
10
15
20
0
0.2
0.4
0.6
0.8
1
VGS, GATE-SOURCE VOLTAGE (V)
ID, DRAIN-SOURCE CURRENT (A)
Figure 3. Typical On-Resistance vs. Drain Current and
Gate Voltage
Figure 4. Typical Transfer Characteristic
4.5
4
2.2
2
TA=150℃
VGS= 4.5V
TA=125℃
3.5
3
TA=85℃
1.8
1.6
1.4
1.2
1
VGS=4.5V, ID=100mA
2.5
2
TA=25℃
TA=-55℃
1.5
1
VGS=2.5V, ID=50mA
0.8
0.6
0.5
0
0
0.2
0.4
0.6
0.8
1
-50 -25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (℃)
ID, DRAIN CURRENT (A)
Figure 6. On-Resistance Variation with Junction
Temperature
Figure 5. Typical On-Resistance vs. Drain Current and
Temperature
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DMN62D0UDW
Document number: DS38029 Rev. 2 - 2
DMN62D0UDW
1.2
1.1
1
3.5
3
2.5
2
VGS=2.5V, ID=50mA
ID=1mA
0.9
0.8
0.7
0.6
0.5
0.4
1.5
1
ID=250μA
VGS=4.5V, ID=100mA
0.5
0
-50 -25
0
25
50
75 100 125 150
-50 -25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (℃)
Figure 8. Gate Threshold Variation vs. Junction
Temperature
TJ, JUNCTION TEMPERATURE (℃)
Figure 7. On-Resistance Variation with Junction
Temperature
1
0.8
0.6
0.4
0.2
0
100
f=1MHz
Ciss
VGS=0V, TA=85℃
VGS=0V, TA=125℃
VGS=0V, TA=150℃
10
Coss
Crss
VGS=0V, TA=25℃
VGS=0V, TA=-55℃
1
0
0.3
0.6
0.9
1.2
1.5
0
5
10
15
20
25
30
35
40
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 10. Typical Junction Capacitance
VSD, SOURCE-DRAIN VOLTAGE (V)
Figure 9. Diode Forward Voltage vs. Current
10
4.5
4
PW=100μs
RDS(ON) Limited
3.5
3
PW=1ms
1
0.1
2.5
2
VDS=10V, ID=250mA
PW=10ms
PW=100ms
1.5
1
TJ(MAX)=150℃
PW=1s
0.01
0.001
TC=25℃
PW=10s
Single Pulse
DUT on 1*MRP board
DC
0.5
0
VGS=4.5V
0.1
1
10
100
0
0.1
0.2
0.3
Qg (nC)
Figure 11. Gate Charge
0.4
0.5
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 12. SOA, Safe Operation Area
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© Diodes Incorporated
DMN62D0UDW
Document number: DS38029 Rev. 2 - 2
DMN62D0UDW
1
D=0.5
D=0.3
D=0.9
D=0.7
0.1
D=0.1
D=0.05
D=0.02
D=0.01
D=0.005
0.01
RθJA (t)=r(t) * RθJA
RθJA=405℃/W
D=Single Pulse
Duty Cycle, D=t1 / t2
0.001
1E-06
1E-05
0.0001
0.001
0.01
0.1
1
10 100
1000
t1, PULSE DURATION TIME (sec)
Figure 13. Transient Thermal Resistance
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© Diodes Incorporated
DMN62D0UDW
Document number: DS38029 Rev. 2 - 2
DMN62D0UDW
Package Outline Dimensions
Please see http://www.diodes.com/package-outlines.html for the latest version.
SOT363
E
E1
SOT363
Dim Min Max
A1 0.00 0.10
A2 0.90 1.00
Typ
0.05
1.00
0.25
0.11
2.15
2.10
1.30
b
c
D
E
0.10 0.30
0.10 0.22
1.80 2.20
2.00 2.20
F
b
E1 1.15 1.35
D
e
F
L
a
0.650 BSC
0.40 0.45 0.425
0.25 0.40
0° 8°
0.30
--
A2
All Dimensions in mm
c
a
L
e
A1
Suggested Pad Layout
Please see http://www.diodes.com/package-outlines.html for the latest version.
SOT363
C
Value
Dimensions
(in mm)
C
G
X
Y
Y1
0.650
1.300
0.420
0.600
2.500
Y1
G
Y
X
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DMN62D0UDW
Document number: DS38029 Rev. 2 - 2
DMN62D0UDW
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
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This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause
the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2016, Diodes Incorporated
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© Diodes Incorporated
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