DMP2036UVT-7 [DIODES]
Small Signal Field-Effect Transistor,;型号: | DMP2036UVT-7 |
厂家: | DIODES INCORPORATED |
描述: | Small Signal Field-Effect Transistor, 开关 光电二极管 晶体管 |
文件: | 总7页 (文件大小:349K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
DMP2036UVT
P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features and Benefits
Low Input Capacitance
ID Max
BVDSS
RDS(ON) Max
Low On-Resistance
TA = +25°C
Fast Switching Speed
-6.0A
-5.5A
30mΩ @ VGS = -4.5V
39mΩ @ VGS = -2.5V
ESD Protected
-20V
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Mechanical Data
Description and Applications
Case: TSOT26
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram
This MOSFET is designed to minimize the on-state resistance
(RDS(ON)) and yet maintain superior switching performance, making it
ideal for high-efficiency power management applications.
Terminals: Finish - Matte Tin Annealed over Copper Leadframe;
DC-DC Converters
Motor Control
e3
Solderable per MIL-STD-202, Method 208
Weight: 0.013 grams (Approximate)
Power Management Functions
Analog Switch
D
S
TSOT26
D
D
G
1
2
3
6
5
4
D
D
S
G
Gate Protection
Diode
ESD PROTECTED
Top View
Top View
Pin-Out
Equivalent Circuit
Ordering Information (Note 4)
Part Number
DMP2036UVT-7
DMP2036UVT-13
Case
TSOT26
TSOT26
Packaging
3,000/Tape & Reel
10,000/Tape & Reel
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant.
2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and
Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/.
Marking Information
AT5 = Product Type Marking Code
YM = Date Code Marking
Y or Y = Year (ex: F = 2018)
AT5
M = Month (ex: 9 = September)
Date Code Key
Year
2017
2018
2019
2020
2021
2022
2023
2024
2025
Code
E
F
G
H
I
J
K
L
M
Month
Jan
Feb
Mar
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
Code
1
2
3
4
5
6
7
8
9
O
N
D
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November 2018
© Diodes Incorporated
DMP2036UVT
Document number: DS40059 Rev. 2 - 2
DMP2036UVT
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Symbol
VDSS
Value
-20
Unit
V
Gate-Source Voltage
±8
V
VGSS
Steady
State
TA = +25°C
TA = +70°C
-6.0
-5.0
A
Continuous Drain Current (Note 6) VGS = -4.5V
ID
Pulsed Drain Current (10μs Pulse, Duty Cycle = 1%)
Continuous Source-Drain Diode Current (Note 6)
Avalanche Current (Note 7) L = 0.1mH
-40
-2,2
-21
23
A
A
IDM
IS
IAS
A
Avalanche Energy (Note 7) L = 0.1mH
mJ
EAS
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
1.1
Unit
W
TA = +25°C
Total Power Dissipation (Note 5)
PD
RθJA
PD
0.7
108
TA = +70°C
Steady State
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
°C/W
W
1.5
TA = +25°C
TA = +70°C
Steady State
1.0
Thermal Resistance, Junction to Ambient (Note 6)
Thermal Resistance, Junction to Case (Note 6)
Operating and Storage Temperature Range
81
RθJA
RθJC
°C/W
°C
Steady State
16
-55 to +150
TJ, TSTG
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Symbol
Min
Typ
Max
Unit
Test Condition
-20
—
—
—
—
—
-1
V
BVDSS
IDSS
VGS = 0V, ID = -250μA
VDS = -16V, VGS = 0V
VGS = ±8V, VDS = 0V
µA
µA
Zero Gate Voltage Drain Current TJ = +25°C
Gate-Source Leakage
—
±10
IGSS
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
-0.4
—
—
24
31
41
-1.0
30
V
mΩ
V
VGS(TH)
RDS(ON)
VSD
VDS = VGS, ID = -250μA
VGS = -4.5V, ID = -6.4A
VGS = -2.5V, ID = -4.8A
VGS = -1.8V, ID = -2.5A
VGS = 0V, IS = -1.0A
Static Drain-Source On-Resistance
39
58
—
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
-0.7
-1.2
—
—
—
—
—
—
—
—
—
—
—
—
—
1,808
155
117
32
—
—
—
—
—
—
—
—
—
—
—
—
—
Ciss
Coss
Crss
Rg
VDS = -15V, VGS = 0V,
f = 1.0MHz
Output Capacitance
pF
Ω
Reverse Transfer Capacitance
Gate Resistance
VDS = 0V, VGS = 0V, f = 1MHz
20.5
2.8
Total Gate Charge (VGS = -4.5V)
Gate-Source Charge
Gate-Drain Charge
Qg
VDS = -10V, VGS = -4.5V,
ID = -4.0A
nC
Qgs
Qgd
tD(ON)
tR
4.1
9.1
Turn-On Delay Time
Turn-On Rise Time
12.3
120
54
VDS = -10V, VGS = -4.5V,
Rg = 6Ω, ID = -1.0A
ns
Turn-Off Delay Time
Turn-Off Fall Time
tD(OFF)
tF
Reverse Recovery Time
Reverse Recovery Charge
23.1
8.3
ns
tRR
IF = -1.0A, di/dt = 100A/μs
IF = -1.0A, di/dt = 100A/μs
nC
QRR
Notes:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1-inch square copper plate.
7. IAS and EAS ratings are based on low frequency and duty cycles to keep TJ = +25°C .
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.
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© Diodes Incorporated
DMP2036UVT
Document number: DS40059 Rev. 2 - 2
DMP2036UVT
30.0
25.0
20.0
15.0
10.0
5.0
30
25
20
15
10
5
VGS = -2.5V
VGS = -3.0V
VGS = -4.0V
VDS = -5.0V
VGS=-2.0V
VGS = -4.5V
VGS = -8.0V
VGS = -1.8V
VGS = -1.5V
VGS = -1.2V
TJ=85℃
TJ=25℃
TJ=125℃
TJ=150℃
TJ=-55℃
0
0.0
0
0.5
1
1.5
2
2.5
3
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
VGS, GATE-SOURCE VOLTAGE (V)
Figure 2. Typical Transfer Characteristic
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. Typical Output Characteristic
150
120
90
60
30
0
200
150
100
50
ID = -6.4A
VGS = -1.8V
ID = -4.8A
ID = -2.5A
VGS = -2.5V
VGS = -4.5V
0
0
5
10
15
20
25
30
0
2
4
6
8
ID, DRAIN-SOURCE CURRENT (A)
Figure 3. Typical On-Resistance vs. Drain Current and
Gate Voltage
VGS, GATE-SOURCE VOLTAGE (V)
Figure 4. Typical Transfer Characteristic
50
2
1.8
1.6
1.4
1.2
1
VGS = -4.5V
40
30
20
10
0
TJ=125℃
TJ=85℃
TJ=150℃
VGS = -2.5V, ID = -4.8A
VGS = -4.5V, ID = -6.4A
TJ=25℃
TJ=-55℃
VGS = -1.8V, ID = -2.5A
0.8
0.6
0.4
0
5
10
15
20
25
30
-50
-25
0
25
50
75
100 125 150
ID, DRAIN CURRENT (A)
T , JUNCTION TEMPERATURE (℃)
J
Figure 5. Typical On-Resistance vs. Drain Current and
Temperature
Figure 6. On-Resistance Variation with Temperature
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© Diodes Incorporated
DMP2036UVT
Document number: DS40059 Rev. 2 - 2
DMP2036UVT
60
55
50
45
40
35
30
25
20
15
10
5
1.2
0.9
0.6
0.3
0
VGS = -1.8V, ID = -2.5A
ID = -1mA
ID = -250μA
VGS = -4.5V, ID = -6.4A
VGS = -2.5V, ID = -4.8A
0
-50
-25
TJ, JUNCTION TEMPERATURE (℃)
Figure 7. On-Resistance Variation with Temperature
0
25
50
75
100 125 150
-50
-25
0
25
50
75
100 125 150
TJ, JUNCTION TEMPERATURE (℃)
Figure 8. Gate Threshold Variation vs. Junction
Temperature
30
25
20
15
10
5
10000
f=1MHz
VGS = 0V
Ciss
1000
100
10
Coss
Crss
TJ = 85℃
TJ = 125℃
TJ = 25℃
TJ = 150℃
TJ = -55℃
0
0
0.3
0.6
0.9
1.2
1.5
0
5
10
15
20
VSD, SOURCE-DRAIN VOLTAGE (V)
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 10. Typical Junction Capacitance
Figure 9. Diode Forward Voltage vs. Current
100
10
8
6
4
2
0
RDS(ON) Limited
PW =100µs
1
PW =1ms
PW =10ms
PW =100ms
PW =1s
VDS = -10V, ID = -4A
0.1
0.01
TJ(Max) = 150℃ TC = 25℃
Single Pulse
DUT on 1*MRP Board
VGS= -10V
PW =10s
DC
0
5
10
15
20
25
30
0.1
1
10
100
Qg (nC)
Figure 11. Gate Charge
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 12. SOA, Safe Operation Area
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November 2018
© Diodes Incorporated
DMP2036UVT
Document number: DS40059 Rev. 2 - 2
DMP2036UVT
1
D=0.7
D=0.5
D=0.3
D=0.9
0.1
D=0.1
D=0.05
D=0.02
D=0.01
D=0.005
0.01
RθJA(t) = r(t) * RθJA
RθJA = 103℃/W
Duty Cycle, D = t1 / t2
D=Single Pulse
0.001
1E-06
1E-05
0.0001
0.001
0.01
0.1
1
10
100
1000
t1, PULSE DURATION TIME (sec)
Figure 13. Transient Thermal Resistance
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© Diodes Incorporated
DMP2036UVT
Document number: DS40059 Rev. 2 - 2
DMP2036UVT
Package Outline Dimensions
Please see http://www.diodes.com/package-outlines.html for the latest version.
TSOT26
D
e1
01( 4x)
TSOT26
E1/2
Dim
A
Min
Max
Typ
E/2
1.00
A1
A2
D
0.010 0.100
0.840 0.900
c
E1
E
Gauge Plane
Seating Plane
2.800 3.000 2.900
E
E1
b
2.800 BSC
1.500 1.700 1.600
0.300 0.450
0.120 0.200
0
L
L2
c
01( 4x)
e
0.950 BSC
e
b
e1
L
1.900 BSC
0.50
A2
0.30
A1
L2
θ
θ1
0.250 BSC
8°
A
0°
4°
4°
12°
Seating Plane
All Dimensions in mm
Suggested Pad Layout
Please see http://www.diodes.com/package-outlines.html for the latest version.
TSOT26
C
Dimensions Value (in mm)
C
X
Y
0.950
0.700
1.000
3.199
Y1
Y1
Y
X
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© Diodes Incorporated
DMP2036UVT
Document number: DS40059 Rev. 2 - 2
DMP2036UVT
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2018, Diodes Incorporated
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© Diodes Incorporated
DMP2036UVT
Document number: DS40059 Rev. 2 - 2
相关型号:
DMP2038USS-13
Power Field-Effect Transistor, 6.5A I(D), 20V, 0.038ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8
DIODES
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