DMP213DUFA_15 [DIODES]
25V P-CHANNEL ENHANCEMENT MODE MOSFET;
| 型号： | DMP213DUFA_15 |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | 25V P-CHANNEL ENHANCEMENT MODE MOSFET |
| 文件： | 总6页 (文件大小：276K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DMP213DUFA
25V P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features
•
•
•
•
•
•
•
0.4mm Ultra Low Profile Package for Thin Application
0.48mm2 Package Footprint, 16 Times Smaller than SOT23
Low VGS(th), Can be Driven Directly From a Battery
Low RDS(on)
ID
V(BR)DSS
RDS(ON)
TA = +25°C
-166mA
-138mA
10Ω @ VGS = -4.5V
13Ω @ VGS = -2.7V
-25V
ESD Protected Gate (>6kV Human Body Mode)
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Description
This MOSFET has been designed to minimize the on-state resistance
(RDS(ON)) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
Mechanical Data
•
•
Case: X2-DFN0806-3
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish – NiPdAu over Copper leadframe. Solderable
Applications
•
•
•
Load Switch
•
•
Portable Applications
Power Management Functions
e4
per MIL-STD-202, Method 208
•
Weight: 0.00043 grams (approximate)
Drain
X2-DFN0806-3
Body
Diode
Gate
Gate
Protection
Diode
ESD HBM >6kV
Source
Top View
Package Pin Configuration
Bottom View
Equivalent Circuit
Ordering Information (Note 4)
Part Number
Case
X2-DFN0806-3
Packaging
DMP213DUFA-7B
10,000/Tape & Reel
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
DMN213DUFA-7B
36 = Product Type Marking Code
36
Top View
Bar Denotes Gate
and Source Side
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July 2014
© Diodes Incorporated
DMP213DUFA
Document number: DS36466 Rev. 1 - 2
DMP213DUFA
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Symbol
VDSS
Value
-25
Unit
V
Gate-Source Voltage
-8
VGSS
(Note 6)
-166
-125
mA
ID
TA = +70°C (Note 6)
(Note 5)
Continuous Drain Current
Pulsed Drain Current
V
GS = 4.5V
-145
-500
mA
mA
ID
(Note 7)
IDM
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
360
Unit
mW
°C/W
°C
Power Dissipation
(Note 5)
(Note 5)
PD
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
353
RθJA
-55 to +150
TJ, TSTG
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
Symbol
Min
Typ
Max
Unit
Test Condition
-25
—
—
—
—
—
-1
V
BVDSS
IDSS
VGS = 0V, ID = -250μA
µA
nA
VDS = -20V, VGS = 0V
VGS = -8V, VDS = 0V
—
-100
IGSS
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
-0.65
—
-0.9
—
-1.5
10
V
VGS(th)
RDS(on)
VDS = VGS, ID = -250μA
V
V
GS = -4.5V, ID = -0.2A
GS = -2.7V, ID = -0.05A
Static Drain-Source On-Resistance
ꢀ
—
—
13
Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
—
189
—
—
S
V
|Yfs|
VSD
VDS = -5V, ID = -0.2A
VGS = 0V, IS = -0.2A
—
-1.5
—
—
—
—
—
—
—
—
—
—
27.2
6.1
—
—
—
—
—
—
—
—
—
—
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
Ciss
Coss
Crss
Qg
V
DS = -10V, VGS = 0V,
Output Capacitance
f = 1MHz
Reverse Transfer Capacitance
Total Gate Charge
1.7
0.35
0.08
0.06
4.5
V
DS = -5V, ID = -0.2A,
Gate-Source Charge
Qgs
Qgd
tD(on)
tr
VGS = -4.5V
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
2.3
VDS = -6V, VGS = -4.5V,
ID = -0.2A, RG = 50ꢀ
Turn-Off Delay Time
24.1
11
tD(off)
tf
Turn-Off Fall Time
Notes:
5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper pad layout
7 .Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.
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July 2014
© Diodes Incorporated
DMP213DUFA
Document number: DS36466 Rev. 1 - 2
DMP213DUFA
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0.6
0.5
0.4
0.3
0.2
0.1
0
V
= -8.0V
V
= -5.0V
GS
DS
T
= 150°C
T
= 85°C
A
A
V
= -4.5V
GS
T
= 25°C
V
V
= -4.0V
= -3.0V
A
T
= 125°C
GS
A
T
= -55°C
A
GS
V
= -2.7V
GS
V
= -2.5V
GS
V
= -2.0V
GS
V
= -1.5V
GS
V
= -1.2V
GS
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
0
1
2
3
4
5
VGS, GATE-SOURCE VOLTAGE (V)
VDS, DRAIN -SOURCE VOLTAGE (V)
Figure 2 Typical Transfer Characteristics
Figure 1 Typical Output Characteristics
6
5.5
5
10
9
8
7
6
5
4
3
2
1
0
V
= -4.5V
GS
T
= 150°C
A
V
= -2.7V
4.5
4
GS
3.5
3
T = 125°C
A
V
= -4.5V
GS
T
A
= 85°C
A
2.5
2
T
= -55°C
T
= 25°C
A
1.5
1
0.5
0
0
0.2
0.4
0.6
0.8
1
0
0.2
0.4
0.6
0.8
1
ID, DRAIN SOURCE CURRENT (A)
ID, DRAIN SOURCE CURRENT (A)
Figure 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
Figure 4 Typical On-Resistance vs.
Drain Current and Temperature
1.8
1.6
1.4
1.2
1
5
4.5
4
V
I
= -4.5V
3.5
3
GS
= -300mA
D
V
I
= -4.5V
GS
= -300mA
D
2.5
2
1.5
1
0.8
0.5
0
0.6
-50 -25
TJ, JUNCTION TEMPERATURE (
Figure 6 On-Resistance Variation with Temperature
0
25
50
75 100 125 150
-50 -25
TJ, JUNCTION TEMPERATURE (
Figure 5 On-Resistance Variation with Temperature
0
25
50
75 100 125 150
°C)
°
C)
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July 2014
© Diodes Incorporated
DMP213DUFA
Document number: DS36466 Rev. 1 - 2
DMP213DUFA
1.2
1.1
1
1
0.8
0.6
0.4
0.2
0
-I = 1mA
D
0.9
0.8
0.7
0.6
0.5
0.4
-I = 250µA
D
T = 150°C
A
T = 125°C
A
T = 25°C
A
T = 85°C
A
T = -55°C
A
-50 -25
0
25
50
75 100 125 150
0
0.3
0.6
0.9
1.2
1.5
VSD, SOURCE-DRAIN VOLTAGE (V)
TA, AMBIENT TEMPERATURE (°C)
Figure 8 Diode Forward Voltage vs. Current
Figure 7 Gate Threshold Variation vs. Ambient Temperature
100
8
6
4
2
0
C
iss
V
I
= -5V
DS
= -200mA
D
10
C
oss
C
rss
f = 1MHz
1
0
0.1
0.2
Qg, TOTAL GATE CHARGE (nC)
Figure 10 Gate-Charge Characteristics
0.3
0.4
0.5
0.6
0.7
0
5
10
15
20
25
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 9 Typical Junction Capacitance
1
R
DS(on)
Limited
DC
= 10s
P
W
0.1
P
= 1s
W
P
= 100ms
W
P
= 10ms
W
TJ(max) = 150°C
TA = 25°C
P
= 1ms
W
VGS = -4.5V
Single Pulse
P
= 100µs
W
DUT on 1 * MRP Board
0.01
0.1
1
10
100
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 11 SOA, Safe Operation Area
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July 2014
© Diodes Incorporated
DMP213DUFA
Document number: DS36466 Rev. 1 - 2
DMP213DUFA
1
D = 0.9
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.1
D = 0.05
D = 0.02
D = 0.01
D = 0.005
0.01
0.001
RθJA(t) = r(t) * Rθ
RθJA = 339°C/W
Duty Cycle, D = t1/ t2
JA
Single Pulse
t1, PULSE DURATION TIMES (sec)
Figure 12 Transient Thermal Resistance
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
A3
A1
A
X2-DFN0806-3
Dim
A
Min Max Typ
0.375 0.40 0.39
Seating Plane
A1
A3
b
D
D1
E
E1
e
K
0
-
0.05 0.02
0.10
D
e
-
0.10 0.20 0.15
0.55 0.65 0.60
0.35 0.45 0.40
0.75 0.85 0.80
0.20 0.30 0.25
L (2x)
-
-
-
-
0.35
0.20
b (2x)
K
E
L
0.20 0.30 0.25
All Dimensions in mm
E1
Pin#1
R0.075
D1
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
X1
Value
(in mm)
0.350
0.200
0.450
0.550
0.375
0.475
1.000
Dimensions
Y1
C
X
X1
X2
Y
Y2
X (2x)
Y1
Y2
Y (2x)
C
X2
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© Diodes Incorporated
DMP213DUFA
Document number: DS36466 Rev. 1 - 2
DMP213DUFA
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
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indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
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This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2014, Diodes Incorporated
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© Diodes Incorporated
DMP213DUFA
Document number: DS36466 Rev. 1 - 2
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