DMP2240UDM [DIODES]
DUAL P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR; 双P沟道增强型场效应晶体管
| 型号： | DMP2240UDM |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | DUAL P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
| 文件： | 总5页 (文件大小：160K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DMP2240UDM
DUAL P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Features
Mechanical Data
•
•
Dual P-Channel MOSFET
Low On-Resistance
•
•
Case: SOT-26
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals Connections: See Diagram
Terminals: Finish ⎯ Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
Marking Information: See Page 4
Ordering Information: See Page 4
Weight: 0.015 grams (approximate)
•
•
•
150 mΩ @ VGS = -4.5V
200 mΩ @ VGS = -2.5V
240 mΩ @ VGS = -1.8V
•
•
•
•
•
•
•
•
•
•
Very Low Gate Threshold Voltage VGS(th) ≤ 1V
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Lead Free By Design/RoHS Compliant (Note 2)
"Green" Device (Note 3)
•
•
•
Qualified to AEC-Q101 standards for High Reliability
SOT-26
S1
D1
D2
D1
S1
D2
G1
G1
G2
S2
S2
G2
TOP VIEW
Internal Schematic
TOP VIEW
Maximum Ratings @T = 25°C unless otherwise specified
A
Characteristic
Drain-Source Voltage
Symbol
VDSS
Value
-20
Units
V
V
Gate-Source Voltage
±12
VGSS
TA = 25°C
-2.0
-1.5
Drain Current (Note 1)
A
A
ID
TA = 70°C
Pulsed Drain Current
-7
IDM
Thermal Characteristics
Characteristic
Total Power Dissipation (Note 1)
Symbol
Value
600
Units
mW
°C/W
°C
PD
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
208
Rθ
JA
-65 to +150
TJ, TSTG
Notes:
1. Device mounted on FR-4 PCB.
2. No purposefully added lead.
3. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
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© Diodes Incorporated
DMP2240UDM
Document number: DS31197 Rev. 5 - 2
DMP2240UDM
Electrical Characteristics @T = 25°C unless otherwise specified
A
Characteristic
OFF CHARACTERISTICS (Note 4)
Drain-Source Breakdown Voltage
Symbol
Min
Typ
Max
Unit
Test Condition
-20
⎯
V
BVDSS
IDSS
⎯
⎯
⎯
⎯
-1.0
-5.0
VGS = 0V, ID = -250μA
VDS = -20V, VGS = 0V
VGS = ±12V, VDS = 0V
Zero Gate Voltage Drain Current
TJ = 25°C
TJ = 125°C
μA
nA
Gate-Source Leakage
IGSS
⎯
±100
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
-0.45
-1.0
V
VGS(th)
⎯
VDS = VGS, ID = -250μA
GS = -4.5V, ID = -2.0A
V
92
134
180
150
200
240
Static Drain-Source On-Resistance
RDS (ON)
⎯
mΩ
VGS = -2.5V, ID = -1.5A
VGS = -1.8V, ID = -0.5A
VDS = -10V, ID = -810mA
VGS = 0V, IS = -0.5A
Forward Transconductance
Diode Forward Voltage (Note 4)
DYNAMIC CHARACTERISTICS
Input Capacitance
3.1
S
V
gFS
⎯
⎯
⎯
-0.9
VSD
⎯
320
80
pF
pF
pF
ns
ns
ns
ns
Ciss
Coss
Crss
tD(on)
tr
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
V
DS = -16V, VGS = 0V
Output Capacitance
f = 1.0MHz
Reverse Transfer Capacitance
Turn-On Delay Time
60
11.51
12.09
55.34
27.54
Turn-On Rise Time
V
DS = -10V, VGS = -4.5V
Turn-Off Delay Time
RG = 6Ω, RL = 10Ω
tD(off)
tf
Turn-Off Fall Time
Notes:
4. Short duration pulse test used to minimize self-heating effect.
V
= -3.0V
GS
V
= -10V
V
= -2.0V
DS
GS
V
= -1.8V
GS
V
= -1.6V
GS
T
A
= 125°C
= 25°C
V
= -1.4V
GS
T
A
V
= -1.0V
T
= -55°C
GS
A
V
= -1.2V
GS
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© Diodes Incorporated
DMP2240UDM
Document number: DS31197 Rev. 5 - 2
DMP2240UDM
T
= 25°C
A
I
= 1.0A
D
V
= -2.5V
V
= -1.8V
GS
GS
V
= -4.5V
GS
V
= -1.8V
GS
V
= -2.5V
GS
V
= -4.5V
GS
V
= -10V
GS
0.30
0.20
600
500
V
= -4.5V
GS
f = 1MHz
400
300
200
C
iss
T
= 150°C
A
T
= 125°C
= 25°C
A
0.10
0.00
T
A
C
oss
T
= -55°C
A
100
0
C
rss
0
1
2
3
4
5
0
2
4
6
8
10 12 14 16 18 20
0.3
10,000
1,000
100
V
= 0V
GS
0.27
T = 150°C
j
0.24
0.21
0.18
V
I
= -1.8V
GS
= -200mA
D
V
I
= -2.5V
GS
= -670mA
D
0.15
0.12
0.09
0.06
T = 125°C
j
V
I
= -4.5V
GS
= -950mA
D
0.03
0
-50 -25
0
25
50
75 100 125 150
2
4
6
8
10 12 14 16 18 20
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© Diodes Incorporated
DMP2240UDM
Document number: DS31197 Rev. 5 - 2
DMP2240UDM
1
V
= 0V
GS
0.8
T = 25°C
j
0.6
0.4
0.2
0
0
0.2
0.4
0.6
0.8
1
Ordering Information (Note 5)
Case
Packaging
Part Number
SOT-26
3000/Tape & Reel
DMP2240UDM-7
Notes:
5. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
DMV = Marking Code
YM = Date Code Marking
Y = Year (ex: U = 2007)
M = Month (ex: 9 = September)
DMV
Date Code Key
Year
2007
2008
2009
2010
2011
2012
Code
U
V
W
X
Y
Z
Month
Code
Jan
1
Feb
2
Mar
3
Apr
4
May
5
Jun
6
Jul
7
Aug
8
Sep
9
Oct
O
Nov
N
Dec
D
Package Outline Dimensions
A
SOT-26
Dim Min Max Typ
A
B
C
D
H
J
K
L
M
0.35 0.50 0.38
1.50 1.70 1.60
2.70 3.00 2.80
B
C
0.95
⎯
⎯
2.90 3.10 3.00
0.013 0.10 0.05
1.00 1.30 1.10
0.35 0.55 0.40
0.10 0.20 0.15
H
K
M
0°
8°
α
⎯
J
L
D
All Dimensions in mm
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© Diodes Incorporated
DMP2240UDM
Document number: DS31197 Rev. 5 - 2
DMP2240UDM
Suggested Pad Layout
C2
C2
Dimensions Value (in mm)
Z
G
X
Y
C1
C2
3.20
1.60
0.55
0.80
2.40
0.95
C1
G
Z
Y
X
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2010, Diodes Incorporated
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www.diodes.com
April 2010
© Diodes Incorporated
DMP2240UDM
Document number: DS31197 Rev. 5 - 2
相关型号：
DMP2240UWQ-7
Small Signal Field-Effect Transistor, 1.5A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET,
DIODES
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