DMP3012LPS [DIODES]
P-CHANNEL ENHANCEMENT MODE MOSFET;
| 型号： | DMP3012LPS |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | P-CHANNEL ENHANCEMENT MODE MOSFET |
| 文件： | 总6页 (文件大小：365K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DMP3012LPS
P-CHANNEL ENHANCEMENT MODE MOSFET
POWERDI®5060-8
Product Summary
Features and Benefits
•
•
•
•
•
•
•
•
•
•
Thermally Efficient Package-Cooler Running Applications
High Conversion Efficiency
ID
V(BR)DSS
RDS(ON)
TC = +25°C
Low RDS(ON) – Minimizes On State Losses
Low Input Capacitance
-45A
-35A
9mΩ @ VGS = -10V
12mΩ @ VGS = -4.5V
-30V
Fast Switching Speed
<1.1mm Package Profile – Ideal for Thin Applications
ESD HBM Protected up to 1kV
Description and Applications
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
This new generation 30V P-Channel Enhancement Mode MOSFET
has been designed to minimize RDS(ON) and yet maintain superior
switching performance. This device is ideal for use in Notebook
battery power management and loadswitch.
Mechanical Data
•
•
•
Notebook Battery Power Management
DC-DC Converters
•
•
Case: POWERDI5060-8
Case Material: Molded Plastic, “Green” Molding Compound. UL
Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram Below
Weight: 0.097 grams (approximate)
Loadswitch
•
•
•
POWERDI5060-8
D
S
S
D
D
D
D
Pin1
S
G
G
S
Top View
Pin Configuration
Top View
Bottom View
Internal Schematic
Ordering Information (Note 4)
Part Number
DMP3012LPS-13
Case
POWERDI5060-8
Packaging
2500 / Tape & Reel
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
D
D
D
D
= Manufacturer’s Marking
P3012LS = Product Type Marking Code
YYWW = Date Code Marking
YY = Year (ex: 13 = 2013)
P3010LS
YY WW
WW = Week (01 - 53)
S
S
S
G
POWERDI is a registered trademark of Diodes Incorporated.
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© Diodes Incorporated
DMP3012LPS
Document number: DS35247 Rev. 2 - 2
DMP3012LPS
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Symbol
VDSS
Value
-30
Unit
V
Gate-Source Voltage
±20
V
VGSS
Steady
Continuous Drain Current (Note 6) VGS = -10V
State
TA = +25°C
TA = +70°C
TA = +25°C
TA = +70°C
13.2
10.5
A
A
ID
ID
Steady
Continuous Drain Current (Note 6) VGS = -4.5V
State
11.4
9.1
Pulsed Drain Current (Notes 6)
-100
-24
A
A
IDM
IAR
Avalanche Current (Notes 7) L = 1mH
Avalanche Energy (Notes 7) L = 1mH
292
mJ
EAR
Thermal Characteristics
Characteristic
Power Dissipation (Note 5)
Symbol
PD
Value
1.29
97
Unit
W
°C/W
W
Thermal Resistance, Junction to Ambient @ TA = +25°C (Note 5)
Power Dissipation (Note 6)
RθJA
2.36
53
PD
°C/W
°C/W
Thermal Resistance, Junction to Ambient @ TA = +25°C (Note 6)
Thermal Resistance, Junction to Case @ TC = +25°C (Notes 6 )
Operating and Storage Temperature Range
RθJA
4.0
RθJC
TJ, TSTG
-55 to +150
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
Symbol
Min
Typ
Max
Unit
Test Condition
-30
—
—
—
—
—
V
BVDSS
IDSS
VGS = 0V, ID = -250µA
VDS = -30V, VGS = 0V
VGS = ±20V, VDS = 0V
-1.0
±100
μA
nA
—
IGSS
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
-1.1
—
-1.6
7.5
-2.1
9.0
V
VGS(th)
VDS = VGS, ID = -250µA
V
V
GS = -10V, ID = -10A
GS = -4.5V, ID = -10A
Static Drain-Source On-Resistance
mꢀ
RDS (ON)
—
8.5
12.0
—
Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
—
30
S
V
|Yfs|
VSD
VDS = -15V, ID = -10A
VGS = 0V, IS = -1A
—
-0.65
-1.0
—
—
—
—
—
—
—
—
—
—
—
—
6807
988
647
6.2
139
66
—
—
—
—
—
—
—
—
—
—
—
—
pF
pF
pF
ꢀ
Ciss
Coss
Crss
Rg
VDS = 15V, VGS = 0V,
f = 1.0MHz
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VDS = 0V, VGS = 0V, f = 1MHz
nC
nC
nC
nC
ns
ns
ns
ns
Total Gate Charge (VGS = -10V)
Total Gate Charge (VGS = -4.5V)
Gate-Source Charge
Qg
Qg
VDS = -15V, ID = -10A
19
Qgs
Qgd
tD(on)
tr
Gate-Drain Charge
21
Turn-On Delay Time
8.9
10.5
254
95
Turn-On Rise Time
VDS = -15V, VGEN = -10V,
Turn-Off Delay Time
RG = 6ꢀ, ID = -1A
tD(off)
tf
Turn-Off Fall Time
Notes:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7. IAS and EAS rating are based on low frequency and duty cycles to keep TJ = 25°C
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.
POWERDI is a registered trademark of Diodes Incorporated.
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April 2014
© Diodes Incorporated
DMP3012LPS
Document number: DS35247 Rev. 2 - 2
DMP3012LPS
30.0
25.0
20.0
15.0
10.0
5.0
30
25
20
15
10
5
V
= -5V
V
= -4.0V
DS
GS
V
= -3.5V
GS
V
= -3.0V
GS
T
= 150°C
A
V
= -2.5V
GS
T
= 125°C
= 85°C
A
T
A
T
= 25°C
A
V
= -2.2V
GS
T
= -55°C
A
0.0
0
0
0.5
1
1.5
2
2.5
3
0
0.5
1
1.5
2
2.5
3
-VGS, GATE-SOURCE VOLTAGE (V)
Figure 2 Typical Transfer Characteristics
-VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1 Typical Output Characteristics
0.012
0.01
0.02
0.018
0.016
0.014
0.012
0.01
V
= -4.5V
GS
T
= 150°C
= 85°C
T
= 125°C
A
A
V
= -4.5V
GS
0.008
0.006
0.004
0.002
T
A
V
= -10V
GS
T
A
= 25°C
T
0.008
0.006
0.004
0.002
0
= -55°C
A
0
1
2
3
4
5
6
7
8
9
10
0
5
10
-ID, DRAIN CURRENT (A)
Figure 4 Typical On-Resistance
vs. Drain Current and Temperature
15
20
25
30
-ID, DRAIN-SOURCE CURRENT (A)
Figure 3 Typical On-Resistance
vs. Drain Current and Gate Voltage
1.5
1.3
1.1
0.9
0.7
0.5
0.02
0.015
0.01
0.005
0
V
= -4.5V
= -10A
GS
I
D
V
I
= -10V
GS
= -20A
D
V
= -4.5V
GS
I
= -10A
D
V
= -10V
= -20A
GS
I
D
-50 -25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 6 On-Resistance Variation with Temperature
-50 -25
TA, AMBIENT TEMPERATURE (°C)
Figure 5 On-Resistance Variation with Temperature
0
25
50
75 100 125 150
POWERDI is a registered trademark of Diodes Incorporated.
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DMP3012LPS
Document number: DS35247 Rev. 2 - 2
DMP3012LPS
2.5
2
30
25
20
15
10
5
I
= -1mA
D
1.5
1
I
= -250µA
D
T
= 150°C
A
T
T
= 125°C
= 85°C
A
A
T
= 25°C
A
0.5
0
T
= -55°C
A
0
0
0.3
0.6
0.9
1.2
1.5
-50 -25
0
25
50
75 100 125 150
-VSD, SOURCE-DRAIN VOLTAGE (V)
Figure 8 Diode Forward Voltage vs. Current
TA, AMBIENT TEMPERATURE (°C)
Figure 7 Gate Threshold Variation vs. Ambient Temperature
100000
10
9
8
7
6
5
4
3
2
1
0
f = 1MHz
10000
C
iss
V
= -15V
DS
I
= -10A
D
C
oss
1000
C
rss
100
0
5
10
15
20
25
30
0
30
Qg, TOTAL GATE CHARGE (nC)
Figure 10 Gate-Source Voltage vs. Total Gate Charge
60
90
120
150
-VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 9 Typical Total Capacitance
D = 0.9
D = 0.7
D = 0.5
D = 0.3
D = 0.1
D = 0.05
D = 0.02
D = 0.01
D = 0.005
R
R
(t) = r(t) * R
= 95°C/W
θ
JA
JA
θJA
θ
Duty Cycle, D = t /t
1
2
D = Single Pulse
0.0001
0.001
0.01
0.1
1
10
100
1000
t1, PULSE DURATION TIME (s)
Figure 11 Transient Thermal Response
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DMP3012LPS
Document number: DS35247 Rev. 2 - 2
DMP3012LPS
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
D
Detail A
D1
POWERDI5060-8
Dim Min Max
0.90 1.10 1.00
0.00 0.05
0.33 0.51 0.41
O (4X)
Typ
A
A1
b
−
c
A1
b2 0.200 0.350 0.273
b3
c
D
0.40 0.80 0.60
0.230 0.330 0.277
5.15 BSC
E1 E
e
D1
D2
D3
E
4.70 5.10 4.90
3.70 4.10 3.90
3.90 4.30 4.10
6.15 BSC
O (4X)
1
E1
E2
E3
e
G
K
L
L1
M
M1
Θ
Θ1
5.60 6.00 5.80
3.28 3.68 3.48
3.99 4.39 4.19
1.27 BSC
b (8X)
L
e/2
1
b2 (4X)
0.51 0.71 0.61
D3
D2
K
0.51
−
−
0.51 0.71 0.61
0.10 0.20 0.175
3.235 4.035 3.635
1.00 1.40 1.21
A
b3 (4X)
E3
E2
M
10°
6°
12°
8°
11°
7°
M1
Detail A
All Dimensions in mm
G
L1
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
X4
Y2
Dimensions
Value (in mm)
1.270
0.660
0.820
0.610
4.100
0.755
4.420
5.610
1.270
0.600
1.020
0.295
1.825
3.810
0.180
6.610
X3
C
G
G1
X
Y3
Y1
X1
X2
X3
X4
Y
Y1
Y2
Y3
Y4
Y5
Y6
Y7
X2
Y5
Y4
X1
Y7
G1
C
Y6
Y
4x
X
G
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DMP3012LPS
Document number: DS35247 Rev. 2 - 2
DMP3012LPS
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2014, Diodes Incorporated
www.diodes.com
POWERDI is a registered trademark of Diodes Incorporated.
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www.diodes.com
April 2014
© Diodes Incorporated
DMP3012LPS
Document number: DS35247 Rev. 2 - 2
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