DMP3120L-7 [DIODES]
P-CHANNEL ENHANCEMENT MODE MOSFET; P沟道增强型MOSFET
| 型号： | DMP3120L-7 |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | P-CHANNEL ENHANCEMENT MODE MOSFET |
| 文件： | 总5页 (文件大小：106K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DMP3120L
P-CHANNEL ENHANCEMENT MODE MOSFET
Features
Mechanical Data
•
Low On-Resistance:
RDS(ON) < 120mΩ @ VGS = -4.5V
DS(ON) < 240mΩ @ VGS = -2.5V
•
•
Case: SOT-23
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
R
•
•
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish – Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram
Marking Information: See Page 4
Ordering Information: See Page 4
Weight: 0.008 grams (approximate)
•
•
•
•
•
•
•
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Lead Free By Design/RoHS Compliant (Note 2)
"Green" Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
•
•
•
•
Drain
SOT-23
D
Gate
S
G
Source
Equivalent Circuit
Top View
Top View
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Drain Source Voltage
Symbol
VDSS
Value
-30
Unit
V
Gate-Source Voltage
V
VGSS
±12
Drain Current (Note 1)
TA = 25°C
TA = 70°C
Pulsed
-2.8
-2.2
A
ID
Drain Current (Note 1)
-9
A
A
IDM
IS
Body-Diode Continuous Current (Note 1)
-2.0
Thermal Characteristics
Characteristic
Total Power Dissipation (Note 1)
Symbol
Value
1.4
Unit
W
PD
90
°C/W
°C
Thermal Resistance, Junction to Ambient @TA = 25°C (Note 1)
Operating and Storage Temperature Range
Rθ
JA
-55 to +150
T
J, TSTG
Notes:
1. Device mounted on FR-4 PCB. t ≤5 sec.
2. No purposefully added lead.
3. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
1 of 5
www.diodes.com
June 2010
© Diodes Incorporated
DMP3120L
Document number: DS31505 Rev. 3 - 2
DMP3120L
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 4)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
Symbol
Min
Typ
Max
Unit
Test Condition
-30
⎯
⎯
V
BVDSS
IDSS
⎯
⎯
⎯
⎯
-1
VGS = 0V, ID = -250μA
VDS = -30V, VGS = 0V
GS = ±12V, VDS = 0V
μA
nA
IGSS
±100
V
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
-0.6
-1.4
V
VGS(th)
⎯
VDS = VGS, ID = -250μA
VGS = -4.5V, ID = -2.8A
⎯
⎯
⎯
⎯
120
240
Static Drain-Source On-Resistance
RDS (ON)
mΩ
V
GS = -2.5V, ID = -1.8A
Forward Transconductance
Source-Drain Diode Forward Voltage
DYNAMIC CHARACTERISTICS
Input Capacitance
5
S
V
gfs
⎯
⎯
⎯
-1.1
VDS = -5V, ID = -2.8A
VGS = 0V, IS = -2.0A
VSD
⎯
285
56
pF
pF
pF
Ciss
Coss
Crss
⎯
⎯
⎯
⎯
⎯
⎯
V
DS = -15V, VGS = 0V
Output Capacitance
f = 1.0MHz
Reverse Transfer Capacitance
40
V
DS = 0V, VGS = 0V
Gate Resistance
13
RG
⎯
⎯
Ω
f = 1.0MHz
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Rise Time
5.6
6.8
td(on)
tr
td(off)
tf
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
VDS = -15V, VGS = -4.5V,
ID = -1A, RG = 6.0Ω
ns
Turn-Off Delay Time
Fall Time
35.3
19.2
V
DS = -15V, VGS = -10V, ID = -1.0A
6.7
3.0
Total Gate Charge
QG
⎯
⎯
nC
Gate-Source Charge
Gate-Drain Charge
0.8
0.5
QGS
QGD
⎯
⎯
⎯
⎯
VDS = -15V, VGS = -4.5V, ID = -1.0A
Notes:
4. Short duration pulse test used to minimize self-heating effect.
14
12
14
12
V
= -5V
DS
10
10
T
= 85°C
A
8
6
4
8
6
4
T
= 25°C
A
T
= 150°C
A
T
= -55°C
T
= 125°C
A
A
2
0
2
0
0
1
2
3
4
-VGS, GATE SOURCE VOLTAGE (V)
-VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 1 Typical Output Characteristics
Fig. 2 Typical Transfer Characteristics
2 of 5
www.diodes.com
June 2010
© Diodes Incorporated
DMP3120L
Document number: DS31505 Rev. 3 - 2
DMP3120L
0.3
0.2
0.1
0
0.20
0.18
V
= -4.5V
GS
0.16
0.14
0.12
0.10
T
= 150°C
A
V
= -2.5V
GS
T
= 125°C
A
V
= -4.5V
= -10V
GS
T
= 85°C
= 25°C
A
0.08
0.06
T
V
A
GS
T
= -55°C
A
0.04
0.02
0
0
2
4
6
8
10
12
14
0
2
4
6
8
10
-ID, DRAIN CURRENT (A)
Fig. 4 On-Resistance vs. Drain Current and Temperature
12
14
-ID, DRAIN CURRENT (A)
Fig. 3 On-Resistance vs. Drain Current and Gate Voltage
1,000
1.6
V
= -4.5V
f = 1MHz
GS
I
= -2.8A
D
1.4
1.2
1.0
C
C
iss
V
= -2.5V
GS
I
= -2.2A
D
100
V
I
= -10V
GS
= -3.5A
oss
D
C
rss
0.8
0.6
10
-50 -25
0
25
50
75 100 125 150
0
5
10
15
20
25
30
TA, AMBIENT TEMPERATURE (C)
Fig. 5 Normalized Static Drain-Source On-Resistance
vs. Ambient Temperature
-VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 6 Typical Capacitance
10
8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
6
4
I
= -1mA
D
T
= 25°C
A
I
= -250µA
D
2
0
0.2
0
-50 -25
0
25
TA, AMBIENT TEMPERATURE (°C)
Fig. 7 Gate Threshold Voltage vs. Ambient Temperature
50
75 100 125 150
0.4
0.6
-VSD, SOURCE DRAIN VOLTAGE (V)
Fig. 8 Reverse Drain Current vs. Source-Drain Voltage
0.8
1
1.2
3 of 5
www.diodes.com
June 2010
© Diodes Incorporated
DMP3120L
Document number: DS31505 Rev. 3 - 2
DMP3120L
Ordering Information (Note 5)
Part Number
Case
Packaging
DMP3120L-7
SOT-23
3000/Tape & Reel
Notes:
5. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
P4S = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: V = 2008)
P4S
M = Month (ex: 9 = September)
Date Code Key
Year
2008
2009
2010
2011
2012
2013
2014
2015
Code
V
W
X
Y
Z
A
B
C
Month
Code
Jan
1
Feb
2
Mar
3
Apr
4
May
5
Jun
6
Jul
7
Aug
8
Sep
9
Oct
O
Nov
N
Dec
D
Package Outline Dimensions
A
SOT-23
Dim
A
B
C
D
F
G
H
J
K
Min
Max
0.51
1.40
2.50
1.03 0.915
0.60 0.535
Typ
0.40
1.30
2.40
0.37
1.20
2.30
0.89
0.45
1.78
2.80
0.013 0.10
0.903 1.10
-
C
B
2.05
3.00
1.83
2.90
0.05
1.00
0.400
0.55
0.11
-
H
G
M
K
J
K1
D
K1
L
M
-
F
L
0.45
0.085 0.18
0° 8°
0.61
α
All Dimensions in mm
Suggested Pad Layout
Y
Dimensions Value (in mm)
Z
X
Y
C
E
2.9
0.8
0.9
2.0
1.35
Z
C
E
X
4 of 5
www.diodes.com
June 2010
© Diodes Incorporated
DMP3120L
Document number: DS31505 Rev. 3 - 2
DMP3120L
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2010, Diodes Incorporated
www.diodes.com
5 of 5
www.diodes.com
June 2010
© Diodes Incorporated
DMP3120L
Document number: DS31505 Rev. 3 - 2
相关型号：
©2020 ICPDF网 联系我们和版权申明