DMP4013SPS-13 [DIODES]
Power Field-Effect Transistor,;
| 型号： | DMP4013SPS-13 |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | Power Field-Effect Transistor, |
| 文件： | 总7页 (文件大小：425K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DMP4013SPS
Green
P-CHANNEL ENHANCEMENT MODE MOSFET
PowerDI5060-8
Product Summary
Features and Benefits
100% Unclamped Inductive Switch (UIS) Test in Production
Low On-Resistance
ID
BVDSS
RDS(ON) Max
TC = +25°C
Fast Switching Speed
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
An Automotive-Compliant Part is Available Under Separate
Datasheet (DMP4013SPSQ)
-61A
-49A
15m @ VGS = -10V
23m @ VGS = -4.5V
-40V
Description and Applications
This new generation MOSFET has been designed to minimize the on-
state resistance (RDS(ON) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
Mechanical Data
)
®
Case: PowerDI 5060-8
Case Material: Molded Plastic, “Green” Molding Compound. UL
Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram
Terminals: Finish – 100% Matte Tin Annealed over Copper
Leadframe. Solderable per MIL-STD-202, Method 208
Weight: 0.097 grams (Approximate)
Reverse Polarity Protection
BLDC Motor Control
Power Management Functions
D
PowerDI5060-8
S
S
D
D
D
D
Pin1
S
G
G
S
Top View
Pin Configuration
Top View
Bottom View
Internal Schematic
Ordering Information (Note 4)
Part Number
DMP4013SPS-13
Case
PowerDI5060-8
Packaging
2,500 / Tape & Reel
Notes:
1. EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. All applicable RoHS exemptions applied.
2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and
Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/.
Marking Information
D
D
D
D
= Manufacturer’s Marking
P4013SS = Product Type Marking Code
YYWW = Date Code Marking
YY = Year (ex: 19 = 2019)
P4013SS
YY WW
WW = Week (01 to 53)
S
S
S
G
PowerDI is a registered trademark of Diodes Incorporated.
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© Diodes Incorporated
DMP4013SPS
Document number: DS41698 Rev. 2 - 2
DMP4013SPS
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Symbol
VDSS
Value
-40
Unit
V
Gate-Source Voltage
±20
V
VGSS
Steady
State
TC = +25°C
-61
-49
A
A
Continuous Drain Current VGS = -10V (Note 7)
Continuous Drain Current VGS = -10V (Note 6)
ID
TC = +70°C
TA = +25°C
TA = +70°C
Steady
State
-11
-9
ID
IDM
IS
-244
-61
Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%)
Maximum Body Diode Continuous Current (Note 7)
Pulsed Source Current (10µs Pulse, Duty Cycle = 1%)
Avalanche Current (Note 8) L = 1mH
A
A
-244
-16
A
ISM
IAS
EAS
A
Avalanche Energy (Note 8) L = 1mH
176
mJ
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
1.6
Unit
W
Total Power Dissipation (Note 5)
TA = +25°C
Steady State
PD
RθJA
PD
96
3.4
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
°C/W
W
TA = +25°C
Steady State
44
Thermal Resistance, Junction to Ambient (Note 6)
Thermal Resistance, Junction to Case (Note 7)
Operating and Storage Temperature Range
°C/W
°C/W
°C
RθJA
RθJC
TJ, TSTG
1.5
-55 to +150
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 9)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
Symbol
Min
Typ
Max
Unit
Test Condition
-40
V
-1
BVDSS
IDSS
VGS = 0V, ID = -250µA
VDS = -40V, VGS = 0V
VGS = ±20V, VDS = 0V
µA
nA
±100
IGSS
ON CHARACTERISTICS (Note 9)
Gate Threshold Voltage
-1
-3
15
23
V
m
V
VGS(TH)
RDS(ON)
VSD
9.6
VDS = VGS, ID = -250µA
VGS = -10V, ID = -10A
VGS = -4.5V, ID = -8A
VGS = 0V, IS = -1A
Static Drain-Source On-Resistance
13.4
-0.7
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 10)
Input Capacitance
-1.2
4004
309
229
3.5
31
Ciss
Coss
Crss
Rg
VDS = -20V, VGS = 0V
f = 1MHz
Output Capacitance
pF
Reverse Transfer Capacitance
Gate Resistance
VDS = 0V, VGS = 0V, f = 1MHz
Total Gate Charge (VGS = -4.5V)
Total Gate Charge (VGS = -10V)
Gate-Source Charge
Qg
67
Qg
VDS = -20V,
ID = -10A
nC
13.2
11
Qgs
Qgd
tD(ON)
tR
Gate-Drain Charge
Turn-On Delay Time
9.9
32
Turn-On Rise Time
VGS = -10V, VDD = -20V,
RG = 3, ID = -10A
ns
Turn-Off Delay Time
46
tD(OFF)
tF
Turn-Off Fall Time
53
19.5
11.6
Reverse Recovery Time
Reverse Recovery Charge
ns
tRR
IF = -10A, di/dt = -100A/µs
IF = -10A, di/dt = -100A/µs
nC
QRR
Notes:
5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate.
7. Thermal resistance from junction to soldering point (on the exposed drain pad).
8. IAS and EAS ratings are based on low frequency and duty cycles to keep TJ = +25°C .
9. Short duration pulse test used to minimize self-heating effect.
10. Guaranteed by design. Not subject to product testing.
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DMP4013SPS
Document number: DS41698 Rev. 2 - 2
DMP4013SPS
30.0
25.0
20.0
15.0
10.0
5.0
30
25
20
15
10
5
VGS = -3.5V
VGS = -4.0V
VGS = -4.5V
VDS = -5.0V
VGS = -3.0V
VGS = -10V
VGS = -2.8V
VGS = -2.5V
TJ = 85℃
TJ = 150℃
TJ = 125℃
TJ = 25℃
TJ = -55℃
VGS = -2.2V
2.5
VGS = -2.0V
1.5
0.0
0
0
0.5
1
2
3
0.5
1
1.5
VGS, GATE-SOURCE VOLTAGE (V)
Figure 2. Typical Transfer Characteristic
2
2.5
3
3.5
4
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. Typical Output Characteristic
0.2
0.18
0.16
0.14
0.12
0.1
0.020
0.018
0.016
0.014
0.012
0.010
0.008
0.006
0.004
0.002
0.000
VGS = -4.5V
VGS = -10V
0.08
0.06
0.04
0.02
0
ID = -9.8A
0
2
4
6
8
10 12 14 16 18 20
0
5
10
15
20
25
30
VGS, GATE-SOURCE VOLTAGE (V)
ID, DRAIN-SOURCE CURRENT (A)
Figure 4. Typical Transfer Characteristic
Figure 3. Typical On-Resistance vs. Drain Current and
Gate Voltage
2.2
2
0.02
0.018
0.016
0.014
0.012
0.01
VGS = -10V
TJ = 150℃
VGS = -10V, ID = -9.8A
1.8
1.6
1.4
1.2
1
TJ = 125℃
TJ = 85℃
VGS = -4.5V, ID = -9.8A
TJ = 25℃
TJ = -55℃
0.008
0.006
0.004
0.002
0.8
0.6
0.4
-50 -25
TJ, JUNCTION TEMPERATURE (℃)
Figure 6. On-Resistance Variation with Temperature
0
25
50
75 100 125 150
0
5
10
15
20
25
30
ID, DRAIN CURRENT (A)
Figure 5. Typical On-Resistance vs. Drain Current and
Temperature
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DMP4013SPS
Document number: DS41698 Rev. 2 - 2
DMP4013SPS
0.03
0.025
0.02
0.015
0.01
0.005
0
2
1.8
1.6
1.4
1.2
1
ID = -1mA
VGS = -4.5V, ID = -9.8A
ID = -250μA
0.8
0.6
0.4
VGS = -10V, ID = -9.8A
-50 -25
0
25
50
75 100 125 150
-50 -25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (℃)
Figure 8. Gate Threshold Variation vs. Junction
Temperature
TJ, JUNCTION TEMPERATURE (℃)
Figure 7. On-Resistance Variation with Temperature
30
25
20
15
10
5
VGS = 0V
TJ = 150oC
TJ = 125oC
TJ = 85oC
TJ = 25oC
TJ = -55oC
0.9 1.2
0
0
0.3
0.6
VSD, SOURCE-DRAIN VOLTAGE (V)
Figure 9. Diode Forward Voltage vs. Current
1000
100
10
PW = 1µs
RDS(ON) Limited
PW = 10µs
PW = 100µs
PW = 1ms
PW = 10ms
PW = 100ms
DC
TJ(Max) = 150℃
TC = 25℃
Single Pulse
DUT on Infinite
Heatsink
1
VGS = -10V
0.1
0.1
1
10
100
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 12. SOA, Safe Operation Area
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© Diodes Incorporated
DMP4013SPS
Document number: DS41698 Rev. 2 - 2
DMP4013SPS
1
D=0.7
D=0.5
D=0.9
D=0.3
0.1
D=0.1
D=0.05
D=0.02
D=0.01
D=0.005
D=Single Pulse
0.01
RθJC (t) = r(t) * RθJC
RθJC = 1.5℃/W
Duty Cycle, D = t1/t2
0.001
1E-06
1E-05
0.0001
0.001
0.01
0.1
1
10
100
1000
t1, PULSE DURATION TIME (sec)
Figure 13. Transient Thermal Resistance
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DMP4013SPS
Document number: DS41698 Rev. 2 - 2
DMP4013SPS
Package Outline Dimensions
Please see http://www.diodes.com/package-outlines.html for the latest version.
PowerDI5060-8
D
D1
PowerDI5060-8
Detail A
c
Dim
A
A1
b
b2
b3
c
Min
0.90
0.00
0.33
0.200
0.40
0.230
Max
1.10
0.05
0.51
0.350 0.273
0.80 0.60
Typ
1.00
0( 4X)
A1
0.41
E1 E
0.330 0.277
5.15 BSC
e
D
D1
D2
D3
E
E1
E2
E3
e
G
K
L
L1
M
4.70
3.70
3.90
5.10
4.10
4.30
6.15 BSC
6.00
3.68
4.39
1.27 BSC
0.71
0.71
0.200 0.175
4.035 3.635
1.40
12°
8°
4.90
3.90
4.10
01 ( 4X)
1
b ( 8X)
L
e/2
5.60
3.28
3.99
5.80
3.48
4.19
1
b2 ( 4X)
D3
K
0.51
0.51
0.51
0.100
3.235
1.00
10°
0.61
0.61
A
D2
b3 ( 4X)
E3
E2
M
M1
Detail A
M1
Θ
Θ1
1.21
11°
7°
G
L1
6°
All Dimensions in mm
Suggested Pad Layout
Please see http://www.diodes.com/package-outlines.html for the latest version.
PowerDI5060-8
X4
X3
Dimensions
Value (in mm)
1.270
Y2
Y1
C
G
G1
X
X1
X2
X3
X4
Y
Y1
Y2
Y3
Y4
Y5
Y6
Y7
0.660
0.820
0.610
4.100
0.755
4.420
5.610
1.270
0.600
1.020
0.295
1.825
3.810
0.180
6.610
Y3
X2
Y5
Y4
X1
Y7
G1
C
Y6
Y( 4x)
X
G
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DMP4013SPS
Document number: DS41698 Rev. 2 - 2
DMP4013SPS
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2019, Diodes Incorporated
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© Diodes Incorporated
DMP4013SPS
Document number: DS41698 Rev. 2 - 2
相关型号：
DMP4015SPSQ-13
Small Signal Field-Effect Transistor, 8.5A I(D), 40V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, POWERDI5060-8, 8 PIN
DIODES
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