DMT12H065LFDF-13 [DIODES]
Small Signal Field-Effect Transistor,;
| 型号： | DMT12H065LFDF-13 |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | Small Signal Field-Effect Transistor, |
| 文件： | 总8页 (文件大小：455K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DMT12H065LFDF
115V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features and Benefits
0.6mm Profile – Ideal for Low Profile Applications
PCB Footprint of 4mm2
ID Max
BVDSS
@
BVDSS
RDS(ON) Max
Low On-Resistance
TJ
TA = +25°C
Max
100% Unclamped Inductive Switching (UIS) Test in Production –
Ensures More Reliable and Robust End Application
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
65mΩ @ VGS = 10V
70mΩ @ VGS = 4.5V
4.3A
4.5A
115V
120V
Mechanical Data
Description
Case: U-DFN2020-6
This new generation MOSFET is designed to minimize the on-state
resistance (RDS(ON)) and yet maintain superior switching performance,
making it ideal for high-efficiency power management applications.
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish – NiPdAu over Copper Leadframe.
Applications
e4
Solderable per MIL-STD-202, Method 208
DC-DC Primary Switch
Load Switch
Weight: 0.0065 grams (Approximate)
U-DFN2020-6 (Type F)
D
G
Pin1
S
Pin Out
Bottom View
Top View
Bottom View
Equivalent Circuit
Ordering Information (Note 4)
Part Number
Case
Quantity Per Reel
DMT12H065LFDF-7
DMT12H065LFDF-13
U-DFN2020-6 (Type F)
U-DFN2020-6 (Type F)
3,000
10,000
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant.
2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and
Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/.
Marking Information
U-DFN2020-6 (Type F)
96 = Product Type Marking Code
YM = Date Code Marking
96
Y = Year (ex: G = 2019)
M = Month (ex: 9 = September)
Date Code Key
Year
Code
2019
G
2020
H
2021
I
2022
J
2023
K
2024
L
2025
M
2026
N
2027
O
Month
Code
Jan
1
Feb
2
Mar
3
Apr
4
May
5
Jun
6
Jul
7
Aug
8
Sep
9
Oct
O
Nov
N
Dec
D
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© Diodes Incorporated
DMT12H065LFDF
Datasheet number: DS40715 Rev. 4 - 2
DMT12H065LFDF
Marking Information (continued)
U-DFN2020-6 (Type F)
96 = Product Type Marking Code
YWX = Date Code Marking
Y = Year (ex: 9 = 2019)
96
W = Week (ex: a = week 27; z represents week 52 and 53)
X = Internal Code (ex: U = Monday)
Date Code Key
Year
2019
2020
2021
2022
2023
2024
2025
2026
2027
Code
9
0
1
2
3
4
5
6
7
Week
Code
1-26
A-Z
27-52
a-z
53
z
Internal Code
Code
Sun
T
Mon
U
Tue
V
Wed
W
Thu
X
Fri
Y
Sat
Z
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Symbol
VDSS
Value
115
Unit
V
V
Gate-Source Voltage
±12
VGSS
TA = +25°C
TA = +70°C
4.3
3.4
A
Continuous Drain Current, VGS = 10V (Note 6)
ID
25
6
Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%)
Maximum Body Diode Continuous Current (Note 6)
Pulsed Body Diode Continuous Current (10µs Pulse, Duty Cycle = 1%)
Avalanche Current, L = 0.3mH
A
A
IDM
IS
25
4
A
ISM
IAS
EAS
A
2.4
Avalanche Energy, L = 0.3mH
mJ
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
PD
Value
Unit
W
1.0
0.6
124
1.8
1.2
TA = +25°C
TA = +70°C
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
°C/W
W
R
JA
TA = +25°C
TA = +70°C
PD
Thermal Resistance, Junction to Ambient (Note 6)
Thermal Resistance, Junction to Case (Note 6)
Operating and Storage Temperature Range
69
13
R
JA
°C/W
°C
R
JC
-55 to +150
TJ, TSTG
Notes:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
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© Diodes Incorporated
DMT12H065LFDF
Datasheet number: DS40715 Rev. 4 - 2
DMT12H065LFDF
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
Symbol
Min
Typ
Max
Unit
Test Condition
115
—
—
—
—
—
1
V
BVDSS
IDSS
VGS = 0V, ID = 10mA
VDS = 92V, VGS = 0V
VGS = ±9.6V, VDS = 0V
µA
nA
—
±100
IGSS
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
0.6
—
—
—
—
—
—
43
54
58
75
0.8
2.2
65
V
mΩ
V
VGS(TH)
RDS(ON)
VSD
VDS = VGS, ID = 250μA
VGS = 10V, ID = 3A
VGS = 4.5V, ID = 3A
VGS = 3.8V, ID = 1.0A
VGS = 3V, ID = 0.5A
VGS = 0V, IS = 2.4A
70
Static Drain-Source On-Resistance
150
350
1.3
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
252
80
pF
pF
pF
Ω
Ciss
Coss
Crss
Rg
VDS = 50V, VGS = 0V,
f = 1MHz
Output Capacitance
3
Reverse Transfer Capacitance
Gate Resistance
6.9
5.5
0.4
1.7
2.1
2
VDS = 0V, VGS = 0V, f = 1MHz
Total Gate Charge
nC
nC
nC
ns
ns
ns
ns
ns
nC
Qg
VDS = 50V, ID = 4.5A,
VGS = 10V
Gate-Source Charge
Gate-Drain Charge
Qgs
Qgd
tD(ON)
tR
Turn-On Delay Time
Turn-On Rise Time
VDS = 50V, RL = 11Ω
VGS = 10V, RGEN = 3Ω
10
Turn-Off Delay Time
tD(OFF)
tF
3.6
101
212
Turn-Off Fall Time
Reverse Recovery Time
Reverse Recovery Charge
tRR
IF = 4.5A, di/dt = 300A/μs
QRR
Notes:
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
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© Diodes Incorporated
DMT12H065LFDF
Datasheet number: DS40715 Rev. 4 - 2
DMT12H065LFDF
20.0
18.0
16.0
14.0
12.0
10.0
8.0
20
18
16
14
12
10
8
VGS = 4.0V
VGS = 8.0V
VDS = 5V
VGS = 3.5V
VGS = 10.0V
VGS = 3.0V
VGS = 2.8V
6.0
6
TJ=85℃
4
4.0
VGS = 2.5V
TJ=125℃
TJ=25℃
TJ=-55℃
TJ=150℃
2
2.0
VGS = 2.0V
4
0
0.0
1
1.5
2
2.5
3
3.5
4
4.5
5
0
1
2
3
5
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. Typical Output Characteristic
VGS, GATE-SOURCE VOLTAGE (V)
Figure 2. Typical Transfer Characteristic
0.08
0.075
0.07
0.5
0.45
0.4
VGS = 3.8V
0.065
0.06
0.35
0.3
ID = 3.0A
0.055
0.05
0.25
0.2
VGS = 4.5V
VGS = 10V
0.045
0.04
0.15
0.1
0.035
0.03
ID = 1.0A
0.05
0
0.025
0.02
0
2
4
6
8
10 12 14 16 18 20
0
2
4
6
8
10
12
VGS, GATE-SOURCE VOLTAGE (V)
Figure 4. Typical Transfer Characteristic
ID, DRAIN-SOURCE CURRENT (A)
Figure 3. Typical On-Resistance vs. Drain Current and
Gate Voltage
0.11
0.1
2
1.8
1.6
1.4
1.2
1
VGS = 10V
VGS = 10V, ID =3.0A
TJ=150℃
0.09
0.08
0.07
0.06
0.05
0.04
0.03
0.02
0.01
0
VGS = 4.5V, ID =3.0A
VGS =3.8V, ID =1.0A
TJ=125℃
TJ=85℃
TJ=25℃
TJ=-55℃
VGS = 3.0V, ID =0.5A
0.8
0.6
-50
-25
0
25
50
75
100 125 150
0
2
4
6
8
10 12 14 16 18 20
TJ, JUNCTION TEMPERATURE (℃)
ID, DRAIN CURRENT(A)
Figure 6. On-Resistance Variation with Junction
Temperature
Figure 5. Typical On-Resistance vs. Drain Current and
Junction Temperature
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DMT12H065LFDF
Datasheet number: DS40715 Rev. 4 - 2
DMT12H065LFDF
0.14
0.13
0.12
0.11
0.1
1.8
1.5
1.2
0.9
0.6
VGS = 4.5V, ID =3.0A
VGS =3.8V, ID =1.0A
VGS = 3.0V, ID =0.5A
ID = 1mA
0.09
0.08
0.07
0.06
0.05
0.04
0.03
0.02
0.01
0
ID = 250μA
VGS = 10V, ID =3.0A
-50
-25
0
25
50
75
100 125 150
-50
-25
0
25
50
75
100 125 150
TJ, JUNCTION TEMPERATURE (℃)
TJ, JUNCTION TEMPERATURE (℃)
Figure 7. On-Resistance Variation with Junction
Temperature
Figure 8. Gate Threshold Variation vs. Junction
Temperature
1000
100
10
20
18
16
14
12
10
8
f=1MHz
Ciss
VGS = 0V
Coss
TJ = 85℃
6
TJ = 125℃
TJ = 25℃
Crss
4
TJ = 150℃
TJ = -55℃
2
0
1
0
0.3
0.6
0.9
1.2
1.5
0
20
40
60
80
100
120
VSD, SOURCE-DRAIN VOLTAGE (V)
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 10. Typical Junction Capacitance
Figure 9. Diode Forward Voltage vs. Current
10
8
100
10
RDS(ON) Limited
PW =100µs
6
1
PW =1ms
PW =10ms
PW =100ms
PW =1s
4
0.1
VDS = 50V, ID = 4.5A
TJ(Max) = 150℃ TC = 25℃
Single Pulse
DUT on 1*MRP Board
VGS= 10V
2
0.01
0.001
PW =10s
DC
0
0
1
2
3
4
5
6
0.1
1
10
100
1000
Qg (nC)
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 12. SOA, Safe Operation Area
Figure 11. Gate Charge
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DMT12H065LFDF
Datasheet number: DS40715 Rev. 4 - 2
DMT12H065LFDF
1
D=0.7
D=0.5
D=0.3
D=0.9
0.1
D=0.1
D=0.05
D=0.02
D=0.01
0.01
D=0.005
RθJA(t) = r(t) * RθJA
RθJA = 123℃/W
Duty Cycle, D = t1 / t2
D=Single Pulse
0.001
1E-06 1E-05 0.0001 0.001
0.01
0.1
1
10
100
1000
10000 100000 1000000
t1, PULSE DURATION TIME (sec)
Figure 13. Transient Thermal Resistance
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DMT12H065LFDF
Datasheet number: DS40715 Rev. 4 - 2
DMT12H065LFDF
Package Outline Dimensions
Please see http://www.diodes.com/package-outlines.html for the latest version.
U-DFN2020-6 (Type F)
U-DFN2020-6
(Type F)
Min Max
0.57 0.63
0.00 0.05
A3
A1
Dim
A
A1
A3
b
Typ
0.60
0.03
0.15
0.30
2.00
0.95
0.38
2.00
1.15
0.70
A
Seating Plane
-
-
0.25 0.35
1.95 2.05
0.85 1.05
D
D
D2
e3
k2
e4
D2a 0.33 0.43
E
E2
E2a
e
1.95 2.05
1.05 1.25
0.65 0.75
0.65 BSC
D2a
E2a
z2
e2
e3
e4
k
0.863 BSC
0.70 BSC
0.325 BSC
0.37 BSC
D2
E
E2
k1
k2
L
0.15 BSC
0.36 BSC
0.225 0.325 0.275
0.20 BSC
k1
e2
L
k
z1
z
z1
z2
0.110 BSC
0.20 BSC
e
b
All Dimensions in mm
z( 4x)
Suggested Pad Layout
Please see http://www.diodes.com/package-outlines.html for the latest version.
U-DFN2020-6 (Type F)
X3
Y
C
X
Value
Dimensions
(in mm)
C
X
0.650
0.400
0.480
0.950
1.700
0.425
0.800
1.150
1.450
2.300
X1
X2
X3
Y
Y1
Y2
Y3
Y4
Y3
Y2
Y1 Y4
X1
Pin1
X2
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DMT12H065LFDF
Datasheet number: DS40715 Rev. 4 - 2
DMT12H065LFDF
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2019, Diodes Incorporated
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© Diodes Incorporated
DMT12H065LFDF
Datasheet number: DS40715 Rev. 4 - 2
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