DMT6010LPS_16 [DIODES]
60V N-CHANNEL ENHANCEMENT MODE MOSFET;
| 型号： | DMT6010LPS_16 |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | 60V N-CHANNEL ENHANCEMENT MODE MOSFET |
| 文件： | 总7页 (文件大小：564K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DMT6010LPS
Green
60V N-CHANNEL ENHANCEMENT MODE MOSFET
PowerDI5060-8
Product Summary
Features
Thermally Efficient Package-Cooler Running Applications
High Conversion Efficiency
ID
BVDSS
RDS(ON)
TC = +25°C
(Note 9)
Low RDS(ON) – Minimizes On State Losses
Low Input Capacitance
80A
79A
8mΩ @ VGS = 10V
12mΩ @ VGS = 4.5V
60V
Fast Switching Speed
<1.1mm Package Profile – Ideal for Thin Applications
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Description and Applications
This new generation N-Channel Enhancement Mode MOSFET is
designed to minimize RDS(ON) and yet maintain superior switching
performance. This device is ideal for use in Notebook battery power
management and Loadswitch.
Mechanical Data
®
Case: PowerDI 5060-8
Case Material: Molded Plastic, “Green” Molding Compound. UL
Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Finish - Matte Tin Annealed over Copper Leadframe;
Solderable per MIL-STD-202, Method 208
Weight: 0.097 grams (Approximate)
Notebook Battery Power Management
DC-DC Converters
Loadswitch
PowerDI5060-8
S
S
D
D
D
D
Pin1
S
G
Top View
Pin Configuration
Top View
Internal Schematic
Bottom View
Ordering Information (Note 4)
Part Number
Case
Packaging
DMT6010LPS-13
PowerDI5060-8
2,500 / Tape & Reel
Notes:
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
D
D
D
D
=Manufacturer’s Marking
T6010LS = Product Type Marking Code
YYWW = Date Code Marking
YY = Last Two Digits of Year (ex: 16 = 2016)
WW = Week Code (01 to 53)
T6010LS
YY WW
S
S
S
G
PowerDI is a registered trademark of Diodes Incorporated.
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© Diodes Incorporated
DMT6010LPS
Document number: DS37590 Rev.2 - 2
DMT6010LPS
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Symbol
VDSS
Value
60
Unit
V
Gate-Source Voltage
±20
V
VGSS
TA = +25C
TA = +70C
13.5
11
Continuous Drain Current (Note 5)
A
ID
TC = +25C
(Note 9)
80
Continuous Drain Current (Note 6)
A
ID
TC = +70C
77
80
Maximum Continuous Body Diode Forward Current (Note 6)
Pulsed Drain Current (10s Pulse, Duty Cycle = 1%)
Avalanche Current, L=0.1mH
A
A
IS
125
20
IDM
IAS
EAS
A
Avalanche Energy, L=0.1mH
20
mJ
Thermal Characteristics
Characteristic
Total Power Dissipation (Note 5)
Symbol
Value
2.2
57
Unit
W
TA = +25°C
TC = +25°C
PD
RθJA
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
°C/W
W
113
PD
Thermal Resistance, Junction to Case (Note 6)
Operating and Storage Temperature Range
1.1
°C/W
°C
RθJC
TJ, TSTG
-55 to +150
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
Symbol
Min
Typ
Max
Unit
Test Condition
60
-
-
-
-
-
1
V
BVDSS
IDSS
VGS = 0V, ID = 1mA
VDS = 48V, VGS = 0V
VGS = ±20V, VDS = 0V
μA
nA
-
±100
IGSS
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
1
-
-
6
3
8
V
mΩ
V
VGS(TH)
RDS(ON)
VSD
VDS = VGS, ID = 250μA
VGS = 10V, ID = 20A
VGS = 4.5V, ID = 20A
VGS = 0V, IS = 20A
Static Drain-Source On-Resistance
-
8
12
1.2
Diode Forward Voltage
-
0.9
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
2090
746
38.5
0.59
19.3
41.3
6.0
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Ciss
Coss
Crss
Rg
VDS = 30V, VGS = 0V,
f = 1MHz
Output Capacitance
pF
Reverse Transfer Capacitance
Gate Resistance
Ω
VDS = 0V, VGS = 0V, f = 1MHz
Total Gate Charge (VGS = 4.5V)
Total Gate Charge (VGS = 10V)
Gate-Source Charge
Qg
Qg
nC
ns
VDS = 30V, ID = 20A
Qgs
Qgd
tD(ON)
tR
8.8
Gate-Drain Charge
5.7
Turn-On Delay Time
4.3
Turn-On Rise Time
VDD = 30V, VGS = 10V,
ID = 20A, RG = 3Ω
23.4
9.7
Turn-Off Delay Time
tD(OFF)
tF
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
35.4
38.2
ns
tRR
IF = 20A, di/dt = 100A/μs
nC
QRR
Notes:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate.
6. Thermal resistance from junction to soldering point (on the exposed drain pad).
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
9. Package limited.
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© Diodes Incorporated
DMT6010LPS
Document number: DS37590 Rev.2 - 2
DMT6010LPS
30
25
20
15
10
5
30.0
25.0
20.0
15.0
10.0
5.0
VDS= 5V
VGS=3.0V
VGS=3.5V
VGS=4.0V
VGS=4.5V
VGS=10V
85℃
125℃
150℃
VGS=2.2V
25℃
VGS=2.5V
-55℃
0
0.0
0
0.5
1
1.5
VGS, GATE-SOURCE VOLTAGE (V)
Figure 2. Typical Transfer Characteristic
2
2.5
3
3.5
4
4.5
5
0
1
2
3
4
5
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. Typical Output Characteristic
0.02
0.018
0.016
0.014
0.012
0.01
0.01
0.009
0.008
0.007
0.006
0.005
0.004
VGS= 4.5V
150℃
125℃
VGS=4.5V
VGS=10V
85℃
25℃
0.008
0.006
0.004
0.002
0
-55℃
0
2
4
6
8
10 12 14 16 18 20
0
5
10
15
20
25
30
ID, DRAIN-SOURCE CURRENT (A)
Figure 3. Typical On-Resistance vs. Drain Current and
Gate Voltage
ID, DRAIN CURRENT (A)
Figure 4. Typical On-Resistance vs. Drain Current and
Temperature
0.02
0.018
0.016
0.014
0.012
0.01
2
1.6
VGS=10V, ID=10A
VGS=5V, ID=5A
1.2
0.008
0.006
0.004
0.002
0
VGS=5V, ID=5A
VGS=10V, ID=10A
0.8
0.4
-50 -25
0
25
50
75 100 125 150
-50 -25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (℃)
TJ, JUNCTION TEMPERATURE (℃)
Figure 6. On-Resistance Variation with Temperature
Figure 5. On-Resistance Variation with Temperature
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DMT6010LPS
Document number: DS37590 Rev.2 - 2
DMT6010LPS
2
1.8
1.6
1.4
1.2
1
30
25
20
15
10
5
ID=1mA
VGS=0V, TJ=125℃
VGS=0V, TJ=150℃
ID=250μA
VGS=0V, TJ=85℃
VGS=0V, TJ=25℃
0.8
0.6
0.4
0.2
VGS=0V, TJ=-55℃
0
0
0.3
0.6
0.9
1.2
1.5
-50 -25
0
25
50
75 100 125 150
VSD, SOURCE-DRAIN VOLTAGE (V)
TJ, JUNCTION TEMPERATURE (℃)
Figure 8. Diode Forward Voltage vs. Current
Figure 7. Gate Threshold Variation vs. Junction
Temperature
10
9
8
7
6
5
4
3
2
1
0
10000
f=1MHz
Ciss
Coss
1000
100
10
VDS=30V, ID=20A
Crss
1
0
5
10 15 20 25 30 35 40 45
0
10
20
30
40
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 9. Typical Junction Capacitance
Qg (nC)
Figure 10. Gate Charge
1000
100
10
RDS(ON) Limited
PW=1μs
PW=100μs PW=10μs
PW=1ms
PW=10ms
PW=100ms
TJ(MAX)=150℃
TC=25℃
PW=1s
1
Single Pulse
DUT on infinite heatsink
VGS=10V
0.1
0.1
1
10
100
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 11. SOA, Safe Operation Area
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DMT6010LPS
Document number: DS37590 Rev.2 - 2
DMT6010LPS
1
D=0.5
D=0.3
D=0.9
D=0.7
0.1
D=0.1
D=0.05
D=0.02
D=0.01
D=0.005
0.01
0.001
RθJC(t)=r(t) * RθJC
RθJC=1.05℃/W
Duty Cycle, D=t1 / t2
D=Single Pulse
1E-06
1E-05
0.0001
0.001
0.01
0.1
1
10
100
1000
t1, PULSE DURATION TIME (sec)
Figure 12. Transient Thermal Resistance
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© Diodes Incorporated
DMT6010LPS
Document number: DS37590 Rev.2 - 2
DMT6010LPS
Package Outline Dimensions
Please see http://www.diodes.com/package-outlines.html for the latest version.
PowerDI5060-8
D
D1
Dim
A
A1
b
b2
b3
c
Min
0.90
0.00
0.33
0.200
0.40
0.230
Max
1.10
0.05
0.51
0.350 0.273
0.80 0.60
Typ
1.00
-
Detail A
c
0( 4X)
A1
0.41
0.330 0.277
5.15 BSC
E1 E
D
e
D1
D2
D3
E
E1
E2
E3
e
G
K
L
L1
M
4.70
3.70
3.90
5.10
4.10
4.30
4.90
3.90
4.10
01 ( 4X)
1
6.15 BSC
6.00
3.68
5.60
3.28
3.99
5.80
3.48
4.19
b ( 8X)
L
e/2
4.39
1
1.27 BSC
0.71
b2 ( 4X)
0.51
0.51
0.51
0.100
3.235
1.00
10º
0.61
-
0.61
D3
K
-
0.71
0.200 0.175
4.035 3.635
1.40
12º
8º
A
D2
b3 ( 4X)
E3
E2
M
M1
θ
θ1
1.21
11º
7º
M1
Detail A
6º
G
L1
All Dimensions in mm
Suggested Pad Layout
Please see http://www.diodes.com/package-outlines.html for the latest version.
X4
Dimensions
Value (in mm)
1.270
0.660
0.820
0.610
4.100
0.755
4.420
5.610
1.270
0.600
1.020
0.295
1.825
3.810
0.180
6.610
Y2
X3
C
G
G1
X
Y3
Y1
X1
X2
X3
X4
Y
Y1
Y2
Y3
Y4
Y5
Y6
Y7
X2
Y5
Y4
X1
Y7
G1
C
Y6
Y( 4x)
X
G
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DMT6010LPS
Document number: DS37590 Rev.2 - 2
DMT6010LPS
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2016, Diodes Incorporated
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