DMTH4005SPSQ-13 [DIODES]
Power Field-Effect Transistor, 20.9A I(D), 40V, 0.0037ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,;
| 型号： | DMTH4005SPSQ-13 |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | Power Field-Effect Transistor, 20.9A I(D), 40V, 0.0037ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, 开关 脉冲 光电二极管 晶体管 |
| 文件： | 总7页 (文件大小：570K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Green
DMTH4005SPSQ
40V +175°C N-CHANNEL ENHANCEMENT MODE MOSFET
POWERDI®
Product Summary
Features
Rated to +175°C
Environments
– Ideal For High Ambient Temperature
ID
BVDSS
RDS(ON) Max
TC = +25°C
(Note 10)
100% Unclamped Inductive Switching – Ensures More Reliable
And Robust End Application
Low RDS(ON) – Minimizes Power Losses
40V
100A
3.7mΩ @ VGS = 10V
Low Qg – Minimizes Switching Losses
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
PPAP Capable (Note 4)
Mechanical Data
Description and Applications
Case: POWERDI®5060-8
This MOSFET is designed to meet the stringent requirements of
Automotive applications. It is qualified to AEC-Q101, supported by a
PPAP and is ideal for use in:
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Finish - Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.097 grams (Approximate)
Engine Management Systems
Body Control Electronics
DC-DC Converters
POWERDI®5060-8
S
S
D
D
D
D
Pin1
S
G
Top View
Pin Configuration
Top View
Internal Schematic
Bottom View
Ordering Information (Note 5)
Part Number
DMTH4005SPSQ-13
Case
Packaging
2,500 /Tape & Reel
POWERDI®5060-8
Notes:
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. For more information, please refer to
http://www.diodes.com/product_compliance_definitions.html.
5. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
D
D
D
D
= Manufacturer’s Marking
H4005SS = Product Type Marking Code
YYWW = Date Code Marking
YY = Year (ex: 14 = 2014)
H4005SS
YY WW
WW = Week (01 to 53)
S
S
S
G
POWERDI is a registered trademark of Diodes Incorporated.
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© Diodes Incorporated
DMTH4005SPSQ
Document number: DS38159 Rev.1 - 2
DMTH4005SPSQ
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Symbol
VDSS
Value
40
Unit
V
Gate-Source Voltage
±20
V
VGSS
TA = +25°C
TA = +70°C
TC = +25°C
TC = +100°C
20.9
17.5
Continuous Drain Current (Note 6)
A
A
ID
ID
100
100
Continuous Drain Current (Notes 7 & 10)
Maximum Continuous Body Diode Forward Current (Note 7)
Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%)
Avalanche Current, L=0.6mH
100
150
21
A
A
IS
IDM
IAS
A
132.3
Avalanche Energy, L=0.6mH
mJ
EAS
Thermal Characteristics
Characteristic
Total Power Dissipation (Note 6)
Symbol
PD
Value
2.6
Unit
W
TA= +25°C
TC = +25°C
Thermal Resistance, Junction to Ambient (Note 6)
Total Power Dissipation (Note 7)
57
°C/W
W
RθJA
150
1
PD
Thermal Resistance, Junction to Case (Note 7)
Operating and Storage Temperature Range
°C/W
°C
RθJC
-55 to +175
TJ, TSTG
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
40
—
—
V
BVDSS
IDSS
VGS = 0V, ID = 1mA
VDS = 32V, VGS = 0V
—
—
—
—
1
μA
nA
Gate-Source Leakage
±100
IGSS
VGS = ±20V, VDS = 0V
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
2
4
V
mΩ
V
VGS(TH)
RDS(ON)
VSD
VDS = VGS, ID = 250μA
VGS = 10V, ID = 50A
VGS = 0V, IS = 50A
—
2.9
Static Drain-Source On-Resistance
3.7
—
—
—
Diode Forward Voltage
0.88
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
3,062
902.2
179.2
0.67
49.1
10.3
13
Ciss
Coss
Crss
Rg
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
VDS = 20V, VGS = 0V,
f = 1MHz
Output Capacitance
pF
Ω
Reverse Transfer Capacitance
Gate Resistance
VDS = 0V, VGS = 0V, f = 1MHz
Total Gate Charge
Qg
VDD = 20V, ID = 50A,
VGS = 10V
Gate-Source Charge
nC
Qgs
Qgd
tD(ON)
tR
Gate-Drain Charge
Turn-On Delay Time
8.7
Turn-On Rise Time
6.8
VDD = 20V, VGS = 10V,
ID = 50A, RG = 3Ω
ns
Turn-Off Delay Time
18.6
7.3
tD(OFF)
tF
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
ns
31.8
26.5
tRR
IF = 50A, di/dt = 100A/μs
nC
QRR
Notes:
6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1-inch square copper plate.
7. Thermal resistance from junction to soldering point (on the exposed drain pad).
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.
10. Package limited.
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DMTH4005SPSQ
Document number: DS38159 Rev.1 - 2
DMTH4005SPSQ
30
25
20
15
10
5
100.0
90.0
80.0
70.0
60.0
50.0
40.0
30.0
20.0
10.0
0.0
VGS = 10.0V
VGS = 6.0V
VDS = 6.0V
VGS = 5.0V
VGS = 4.5V
VGS = 4.0V
2.5
125℃
150℃
175℃
85℃
25℃
VGS = 3.8V
-55℃
0
2
2.5
3
3.5
4
4.5
5
0
0.5
1
1.5
2
3
VGS, GATE-SOURCE VOLTAGE (V)
Figure 2 Typical Transfer Characteristic
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1 Typical Output Characteristic
20
5.00
4.50
4.00
3.50
3.00
2.50
2.00
16
12
8
VGS = 6.0V
ID = 20A
ID = 50A
VGS = 10.0V
4
0
0
5
10
15
20
25
30
2
4
6
8
10
VGS, GATE-SOURCE VOLTAGE (V)
Figure 4 Typical Transfer Characteristic
12
14
16
18
20
ID, DRAIN-SOURCE CURRENT (A)
Figure 3 Typical On-Resistance vs. Drain Current and
Gate Voltage
2
1.8
1.6
1.4
1.2
1
0.006
VGS = 10V
175℃
0.005
0.004
0.003
0.002
0.001
150℃
125℃
VGS = 10V, ID = 50A
85℃
25℃
VGS = 6V, ID = 50A
0.8
0.6
0.4
-55℃
-50 -25
0
25
50
75 100 125 150 175
0
10 20 30 40 50 60 70 80 90 100
ID, DRAIN CURRENT (A)
TJ, JUNCTION TEMPERATURE (℃)
Figure 6 On-Resistance Variation with Temperature
Figure 5 Typical On-Resistance vs. Drain Current and
Temperature
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DMTH4005SPSQ
Document number: DS38159 Rev.1 - 2
DMTH4005SPSQ
0.01
0.008
0.006
0.004
0.002
0
3.4
3.2
3
2.8
2.6
2.4
2.2
2
ID = 1mA
VGS = 6V, ID = 50A
ID = 250μA
1.8
1.6
1.4
1.2
1
VGS = 10V, ID = 50A
-50 -25
0
25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE (℃)
Figure 7 On-Resistance Variation with Temperature
-50 -25
0
25
50
75 100 125 150 175
TJ, JUNCTION TEMPERATURE (℃)
Figure 8 Gate Threshold Variation vs. Temperature
10000
1000
100
90
80
70
60
50
40
30
20
10
0
f = 1MHz
C
iss
VGS = 0V
C
oss
TA = 85oC
C
rss
TA = 125oC
100
10
TA = 25oC
TA = 150oC
TA = 175oC
TA = -55oC
0
5
10
15
20
25
30
35
40
0
0.3
0.6
0.9
1.2
1.5
V
, DRAIN-SOURCE VOLTAGE (V)
DS
Figure 10 Typical Junction Capacitance
VSD, SOURCE-DRAIN VOLTAGE (V)
Figure 9 Diode Forward Voltage vs. Current
1000
100
10
R
DS(on)
Limited
P
= 10µs
W
P
= 1µs
W
8
6
4
V
I
= 20V
DS
P
= 1s
W
= 50A
D
P
= 100ms
W
P
= 10ms
W
10
1
P
= 1ms
W
P
= 100µs
W
TJ(max) = 175°C
TC = 25°C
2
VGS = 10V
Single Pulse
DUT on Infinite Heatsink
.1
0
.1
1
10
100
0
10
20
30
40
50
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 12 SOA, Safe Operation Area
Qg, TOTAL GATE CHARGE (nC)
Figure 11 Gate Charge
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DMTH4005SPSQ
Document number: DS38159 Rev.1 - 2
DMTH4005SPSQ
1
D=0.7
D=0.5
D=0.3
D=0.9
0.1
D=0.1
D=0.05
D=0.02
0.01
0.001
D=0.01
D=0.005
D=Single Pulse
RθJC(t) = r(t) * RθJC
RθJC = 1℃/W
Duty Cycle, D = t1 / t2
1E-06
1E-05
0.0001
0.001
0.01
0.1
1
10
t1, PULSE DURATION TIME (sec)
Figure 13 Transient Thermal Resistance
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© Diodes Incorporated
DMTH4005SPSQ
Document number: DS38159 Rev.1 - 2
DMTH4005SPSQ
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version.
POWERDI®5060-8
POWERDI®5060-8
Dim
A
A1
b
b2
b3
c
Min
0.90
0.00
0.33
0.200
0.40
0.230
Max
1.10
0.05
0.51
0.350 0.273
0.80 0.60
0.330 0.277
5.15 BSC
5.10
4.10
4.30
6.15 BSC
6.00
3.68
4.39
1.27 BSC
0.71
0.71
0.200 0.175
4.035 3.635
1.40
12º
8º
Typ
1.00
D
D1
Detail A
c
0( 4X)
A1
0.41
E1 E
D
e
D1
D2
D3
E
E1
E2
E3
e
G
K
L
L1
M
4.70
3.70
3.90
4.90
3.90
4.10
01 ( 4X)
1
5.60
3.28
3.99
5.80
3.48
4.19
b ( 8X)
L
e/2
1
b2 ( 4X)
D3
K
0.51
0.51
0.51
0.100
3.235
1.00
10º
0.61
0.61
A
D2
b3 ( 4X)
E3
E2
M
M1
M1
Θ
Θ1
1.21
11º
7º
Detail A
G
L1
6º
All Dimensions in mm
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
POWERDI®5060-8
X4
Y2
X3
Dimensions
Value (in mm)
1.270
0.660
0.820
0.610
4.100
0.755
4.420
5.610
1.270
0.600
1.020
0.295
1.825
3.810
0.180
6.610
C
G
G1
X
Y3
Y1
X1
X2
X3
X4
Y
Y1
Y2
Y3
Y4
Y5
Y6
Y7
X2
Y5
Y4
X1
Y7
G1
C
Y6
Y( 4x)
X
G
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DMTH4005SPSQ
Document number: DS38159 Rev.1 - 2
DMTH4005SPSQ
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2015, Diodes Incorporated
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© Diodes Incorporated
DMTH4005SPSQ
Document number: DS38159 Rev.1 - 2
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