DPLS4140E-13 [DIODES]
LOW VCE(SAT) PNP SURFACE MOUNT TRANSISTOR; 低VCE （ SAT） PNP表面贴装晶体管
| 型号： | DPLS4140E-13 |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | LOW VCE(SAT) PNP SURFACE MOUNT TRANSISTOR |
| 文件： | 总4页 (文件大小：111K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DPLS4140E
LOW VCE(SAT) PNP SURFACE MOUNT TRANSISTOR
Features
Mechanical Data
•
•
•
•
•
Epitaxial Planar Die Construction
•
•
Case: SOT-223
Ideally Suited for Automated Assembly Processes
Ideal for Medium Power Switching or Amplification Applications
Lead Free By Design/RoHS Compliant (Note 1)
"Green" Device (Note 2)
Case Material: Molded Plastic, "Green" Molding Compound. UL
Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020D
Terminals: Finish - Matte Tin annealed over Copper Leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
•
•
•
•
•
Marking Information: See Page 4
Ordering Information: See Page 4
Weight: 0.115 grams (approximate)
TOR
LLEC
CO
3 E
2,4
2 C
1 B
C 4
T
1
ASE
B
3
EMITTER
EW
VI
OP
Pin Configuration
Top View
Device Schematic
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Collector-Base Voltage
Symbol
VCBO
VCEO
VEBO
IC
Value
Unit
V
-180
-140
-7
Collector-Emitter Voltage
Emitter-Base Voltage
V
V
Continuous Collector Current
Peak Pulse Current
-4
A
-10
A
ICM
Thermal Characteristics
Characteristic
Symbol
PD
Rθ
Value
1
Unit
W
Power Dissipation (Note 3) @ TA = 25°C
125
°C/W
°C
Thermal Resistance, Junction to Ambient Air (Note 3) @ TA = 25°C
Operating and Storage Temperature Range
JA
-55 to +150
TJ, TSTG
Notes:
1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB; pad layout as shown on page 4 or in Diodes Inc. suggested pad layout document AP02001, which can be found on our
website at http://www.diodes.com/datasheets/ap02001.pdf.
1 of 4
www.diodes.com
October 2008
© Diodes Incorporated
DPLS4140E
Document number: DS31279 Rev. 3 - 2
DPLS4140E
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 4)
Collector-Base Breakdown Voltage
Symbol
Min
Typ
Max
Unit
Test Condition
-180
-140
-7
-230
-190
-8.5
V
V
V
V(BR)CBO
V(BR)CEO
V(BR)EBO
⎯
⎯
⎯
I
I
I
C = -100μA, IE = 0
C = -10mA, IB = 0
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
E = -100μA, IC = 0
V
CB = -150V, IE = 0
nA
μA
-20
-0.5
Collector Cutoff Current
ICBO
IEBO
⎯
⎯
⎯
⎯
VCB = -150V, IE = 0,
TA = 100°C
Emitter Cutoff Current
-10
nA
VEB = - 6V, IC = 0
ON CHARACTERISTICS (Note 4)
IC = -0.1A, IB = -5mA
⎯
⎯
⎯
⎯
-40
-50
-75
-60
-80
-120
-360
I
C = -0.5A, IB = -50mA
IC = -1A, IB = -100mA
C = -3A, IB = -300mA
Collector-Emitter Saturation Voltage
mV
VCE(SAT)
-175
I
Base-Emitter Saturation Voltage
Base-Emitter Turn-On Voltage
-910
-810
-1040
-930
mV
mV
VBE(SAT)
VBE(ON)
⎯
⎯
IC = -3A, IB = -300mA
IC = -3A, VCE = -5V
IC = -10mA, VCE = -5V
IC = -1A, VCE = -5V
IC = -3A, VCE = -5V
IC = -10A, VCE = -5V
100
100
45
⎯
⎯
⎯
12
⎯
300
⎯
DC Current Gain
hFE
⎯
⎯
⎯
SMALL SIGNAL CHARACTERISTICS
IC = -100mA, VCE = -10V,
f = 100MHz
Current Gain-Bandwidth Product
150
55
MHz
pF
fT
⎯
⎯
⎯
⎯
Output Capacitance
Cobo
VCB = -10V, f = 1MHz
SWITCHING CHARACTERISTICS
ton
toff
IC = -1A, IB1 = -100mA
⎯
⎯
85
430
⎯
⎯
Switching Times
ns
I
B2 = 100mA, VCC = -50V
Notes:
4. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤2%
0.8
0.6
1.0
I
= -5mA
= -4mA
= -3mA
B
0.8
0.6
0.4
I
B
I
B
0.4
I
= -2mA
B
0.2
0
0.2
0
I
= -1mA
B
0
25
TA, AMBIENT TEMPERATURE (°C)
Fig. 1 Power Dissipation vs. Ambient Temperature (Note 3)
50
150
100
125
75
0
1
2
3
4
5
-VCE, COLLECTOR-EMITTER VOLTAGE (V)
Fig. 2 Typical Collector Current vs. Collector-Emitter Voltage
2 of 4
www.diodes.com
October 2008
© Diodes Incorporated
DPLS4140E
Document number: DS31279 Rev. 3 - 2
DPLS4140E
350
300
0.3
0.2
0.1
0
250
200
150
100
50
0
0.001
0.01
0.1
1
10
0.001
0.01
0.1
1
10
-IC, COLLECTOR CURRENT (A)
Fig. 4 Typical Collector-Emitter Saturation Voltage
vs. Collector Current
1.2
1.2
1
1.0
0.8
0.6
0.4
0.8
0.6
0.4
0.2
0
0.2
0
0.001
0.01
0.1
1
10
0.001
0.01
0.1
1
10
-IC, COLLECTOR CURRENT (A)
-IC, COLLECTOR CURRENT (A)
Fig. 5 Typical Base-Emitter Turn-On Voltage
vs. Collector Current
Fig. 6 Typical Base-Emitter Saturation Voltage
vs. Collector Current
1,000
100
10
200
150
f = 1MHz
V
= -10V
CE
f = 100MHz
100
C
obo
50
0
0.1
1
10
100
0
10 20 30 40 50 60 70 80 90 100
-IC, COLLECTOR CURRENT (mA)
VR, REVERSE VOLTAGE (V)
Fig. 8 Typical Gain-Bandwidth Product vs. Collector Current
Fig. 7 Typical Capacitance Characteristics
3 of 4
www.diodes.com
October 2008
© Diodes Incorporated
DPLS4140E
Document number: DS31279 Rev. 3 - 2
DPLS4140E
Ordering Information (Note 5)
Part Number
DPLS4140E-13
Case
SOT-223
Packaging
2500/Tape & Reel
Notes:
5. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
P414A = Product Type Marking Code
YWW = Date Code Marking
Y = Last digit of year (ex: 8 = 2008)
WW = Week code 01 - 52
W
YW
P414A
Package Outline Dimensions
SOT-223
Dim Min Max Typ
A
1.55 1.65 1.60
A1 0.010 0.15 0.05
b1
b2
C
D
E
E1
e
e1
L
2.90 3.10 3.00
0.60 0.80 0.70
0.20 0.30 0.25
6.45 6.55 6.50
3.45 3.55 3.50
6.90 7.10 7.00
—
—
—
—
4.60
2.30
0.85 1.05 0.95
0.84 0.94 0.89
A
Q
All Dimensions in mm
A1
Suggested Pad Layout
X1
Y1
Dimensions Value (in mm)
X1
X2
Y1
Y2
C1
C2
3.3
1.2
1.6
1.6
6.4
2.3
C1
Y2
C2
X2
IMPORTANT NOTICE
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product
described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall
assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website,
harmless against all damages.
LIFE SUPPORT
Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written
approval of the President of Diodes Incorporated.
4 of 4
www.diodes.com
October 2008
© Diodes Incorporated
DPLS4140E
Document number: DS31279 Rev. 3 - 2
相关型号：
©2020 ICPDF网 联系我们和版权申明