DPS1135FIA-13 [DIODES]
Buffer/Inverter Based Peripheral Driver,;
| 型号： | DPS1135FIA-13 |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | Buffer/Inverter Based Peripheral Driver, |
| 文件： | 总17页 (文件大小：988K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DPS1135
24V/5A 1-CH POWER SWITCH WITH FAST ROLE SWAP
Description
Pin Assignments
The DPS1135 is part of a family of power switches optimized for USB
power delivery and other hot-swap applications. Through the analog
interface, an exception status is reported, and several functions can
be programmed: current limit, overvoltage protection, and output
voltage ramping up. The fast role-swap function, which complies with
the requirements defined in the USB Power Delivery Specification
Release 3.0, V1.0a, is implemented.
(Top View)
IN
IN
1
2
3
4
5
6
17 OUT
16 OUT
15 OUT
14 VLIM
13 ILIM
12 DV/DT
IN
18
SRC
EN
This device is designed to operate between 4.5V and 24V. It offers
fast short-circuit response time to ensure system robustness. The
integrated port-discharge function allows the voltage levels at the
input and output ports to be discharged to meet the requirements of
the USB Power Delivery Specification. Comprehensive fault detection
and recovery mechanisms are provisioned to enable applications,
which are subjected to heavy capacitive loads and the risk of short
circuit. These mechanisms include: reverse voltage and current
blocking, input overvoltage protection, output overcurrent, short-circuit
protection, and overtemperature shut-down. In addition, the rise time
of output voltage can be adjusted to minimize in-rush current and to
ensure system stability. Before any exception condition is notified via
the low-active FAULTB signal, a deglitch of 7ms is applied to prevent
false triggering.
FRS
GND
V-QFN4040-17
The DPS1135 is housed in the low-profile and space-saving
V-QFN4040-17 package, which is manufactured with environmentally
friendly material.
Features
Applications
•
•
Wide Operating Voltage Range: 4.5V to 24V
•
•
•
•
•
Notebook, Desktop, AIO PCs, Servers, and Tablets
Docking Stations, Universal and Multimedia Hubs
FPTVs, PC Monitors
One-Channel Power Switch With Integrated Adjustable Current
& Voltage Limits
•
Ability to Discharge the Input and Output Ports either Individually
or Simultaneously via Two External Control Pins
Fast Short-Circuit Response Time at 2µs
Set-Top-Boxes, Residential Gateways, Storage Devices
Power Protection in Industrial and Automotive Applications
•
•
Comprehensive Built-in Fault Detection and Recovery
Mechanisms like Input Undervoltage Lock-out, Reverse Voltage
&
Current Blocking, Thermal Shutdown, Overcurrent and
Short-Circuit Protection
•
•
•
•
•
•
RDS(ON) of Embedded MOSFET at 30mΩ
Adjustable DV/DT Control at Start-up
Fault Reporting (FAULTB) with Blanking Time at 7ms Typical
Fast Role Swap Supported
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant.
2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and
Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
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December 2018
© Diodes Incorporated
DPS1135
Document number: DS40655 Rev. 1 - 2
DPS1135
Typical Application Circuit
SRC
1
17
16
15
14
13
12
IN
OUT
OUT
2
3
4
5
6
VIN
IN
VOUT
IN
OUT
ON
VEN
EN
FRS
GND
VLIM
ILIM
DPS1135
OFF
DOUT
Schottky
Diode
CIN
10μF
COUT
10μF
VFRS
DV/DT
3.3V
RPU
10kΩ
CFLT
0.1uF
CVREG
0.1μF
CDV/DT
1nF
RILIM
30kΩ
RV LIM
220kΩ
CIMON
100pF
RIMON
50kΩ
Pin Descriptions
Pin Number
Pin Name
Type
Function
Power Supply and Input Port.
1, 2, 3
IN
P
Enable Input; Active High.
0 = Device OFF
4
EN
I
1 = Device ON
This pin must not be left floating.
Fast Role Swap Control. This pin enables the Fast Role Swap sequence defined in the USB Power
Delivery Specification Release 3.0, V1.0a.
5
FRS
I
6
7
GND
GND
I/O
Device Ground.
VREG
Voltage Regulator. A 0.1µF is recommended between this pin and GND.
IN Port Discharge Control.
8
DISC1
I
1 = Port Voltage to be Discharged
0 = Disabled
OUT Port Discharge Control.
9
DISC2
FAULTB
IMON
I
1 = Port Voltage to be Discharged
0 = Disabled
Fault Status Indicator. An external pull-up resistor is required. A 0.1µF capacitor is recommended
between this pin and GND. This active-low pin is tied to GND when not used.
Current Monitor. A 100pF capacitor and a resistor connected in parallel between this pin and GND
creates a positive average voltage proportional to the current flowing through the device. This pin can
be left floating if current monitoring is not required.
10
11
O
O
12
DV/DT
ILIM
I/O
I/O
I/O
O
Ramp-up Control. A capacitor between this pin and GND sets the ramp-up rate.
Current Limit Setting. A resistor between this pin and GND sets the overcurrent limit of the OUT port.
Voltage Limit Setting. A resistor between this pin and GND sets the over-voltage limit of the IN port.
Output Port.
13
14
VLIM
OUT
15, 16, 17
18
Common Source. The exposed pad of the V-QFN4040-17 package must not be connected to any
signal.
SRC
I/O
(Exposed Pad)
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© Diodes Incorporated
DPS1135
Document number: DS40655 Rev. 1 - 2
DPS1135
Functional Block Diagram
11
IMON
1,2,3
IN
Power Switch
& Current Sensing
OUT
15,16,17
GND
Discharge
Control
6
8
Discharge
Control
R
Voltage
& Current
Limiting
R
Driver
Internal
Regulator
DISC1
DISC2
9
4
5
OTP
EN
UVLO, OVP, OCP, RVP, DV/DT
FAULTB
10
FRS
14
13
ILIM
7
12
DV/DT
VREG
VLIM
Absolute Maximum Ratings (@ TA = +25°C, unless otherwise specified) (Note 4)
Symbol
VIN, VOUT
VEN
Parameter
Rating
Unit
Voltage Range of Power IN and OUT Pins
Voltage Range of EN Pin
-0.3 to 30
-0.3 to 30
V
V
Voltage Range of Other Pins
VI/O
-0.3 to 6
V
(FRS, VREG, DISC1, DISC2, FAULTB, IMON, DV/DT, ILIM, VLIM)
Load Current Range
IOUT
IOUTPULSE
TJ
5.5
14
A
A
Load Current Range (RILIM = 6.8K, 1s Pulse, Duty Cycle = 1%)
Operating Junction Temperature
Lead Temperature
-40 to +125
°C
°C
°C
TL
+260
TST
Storage Temperature
-65 to +150
Human Body Model (HBM), JESD22-A114
Charge Device Model (CDM)
2
1
ESD
kV
Note:
4. These are stress ratings only. Operation outside the absolute maximum ratings may cause device failure. Operation at the absolute maximum rating for
extended periods may reduce device reliability.
Thermal Characteristics (@ TA = +25°C, unless otherwise specified) (Note 5)
Symbol
PD
Parameter
Rating
Unit
Power Dissipation
1.7
W
RϴJA
RϴJC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
58.5
12.3
°C/W
°C/W
Note:
5. Device mounted on FR-4 substrate PCB, 2oz copper, with 1” × 1” copper pad layout.
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December 2018
© Diodes Incorporated
DPS1135
Document number: DS40655 Rev. 1 - 2
DPS1135
Recommended Operating Conditions (@ TA = +25°C, unless otherwise specified.)
Symbol
Parameter
Min
4.5
0
Max
24
Unit
V
VIN
Input Supply Voltage
Output Voltage
VOUT
24
V
IOUT
Output Load Current
Input Capacitance
Output Capacitance
Input Voltage on EN Pin
0
5
A
CIN
10
1
—
μF
μF
V
COUT
100
28
VEN
VFRS, VDISC1, VDISC2
RVLIM
0
Input Voltage on FRS, DISC1, DISC2 Pins
VLIM Resistance
0
5.5
270
200
V
51
27
kΩ
kΩ
RILIM
ILIM Resistance
Electrical Characteristics (@ TA = +25°C, VIN = 4.5V to 24V, CIN = COUT = 10μF, VEN = 3.3V, VFRS = 0V, CDV/DT = 1nF,
RVLIM = 240kΩ, RILIM = 27kΩ, unless otherwise specified.)
Symbol
Parameter
Conditions
Min
Typ.
Max
Unit
Bias Supply
—
—
VIN = 5V
—
—
4.9
5.1
5.2
3.6
VREG
Regulated Voltage
VIN = 12V
VIN = 24V
VIN Rising
V
—
—
VUVLO
VUVHY
VIN Undervoltage Lock-out Threshold
VIN Undervoltage Lock-out Threshold
Hysteresis
3.2
4.0
V
VIN Falling
—
250
—
mV
—
—
—
—
—
—
—
—
VIN = 5V, VEN = 0V
VIN = 12V, VEN = 0V
VIN = 24V, VEN = 0V
VIN = 5V, No Load
VIN = 12V, No Load
VIN = 24V, No Load
5
ISHDN
Shut-down Current (Disabled)
Quiescent Current (Enabled)
15
μA
—
25
1.5
1.7
2.2
1.9
2.1
2.6
IQ
MOSFET
RDS(ON)
mA
—
—
—
VIN = 5V
VIN = 12V
VIN = 24V
29
29
30
36
36
36
Switch ON Resistance
mΩ
μA
μA
OUT Leakage Current in OFF State,
Sourcing
ILKGSRC
VEN = 0V, VOUT = 0V
—
—
1
—
—
—
—
—
—
VIN = 3.3V, VEN = 0V, VOUT = 5V
VIN = 3.3V, VEN = 0V, VOUT = 12V
VIN = 3.3V, VEN = 0V, VOUT = 24V
15
25
40
OUT Leakage Current in OFF State,
Sinking
ILKGSNK
Enable Control
—
1.4
—
—
—
—
VENL
VENH
IEN
EN Threshold Voltage Low
EN Threshold Voltage High
EN Input Leakage Current
VEN Falling
0.4
—
5
V
VEN Rising
VIN = 5V, VEN = 5V
μA
Output Ramping Control
—
—
—
—
IDV/DT
DV/DT Sourcing Current
DV/DT to OUT Gain
VDV/DT = 0V
1
μA
GDV/DT
∆VOUT / ∆VDV/DT, Guaranteed by Design
12
V/V
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© Diodes Incorporated
DPS1135
Document number: DS40655 Rev. 1 - 2
DPS1135
Electrical Characteristics (continued) (@ TA = +25°C, VIN = 4.5V to 24V, CIN = COUT = 10μF, VEN = 3.3V, VFRS = 0V,
CDV/DT = 1nF, RVLIM = 240kΩ, RILIM = 27kΩ, unless otherwise specified.)
Typ.
Symbol
Parameter
Output Turn-ON Delay Time
Output Turn-ON Rise Time
Output Turn-OFF Delay Time
Output Turn-OFF Fall Time
Conditions
Min
Max Unit
Output Timing
—
VIN = 5V, COUT = 1μF, VEN = 0V to 3.3V
VIN = 12V, COUT = 1μF, VEN = 0V to 3.3V
VIN = 24V, COUT = 1μF, VEN = 0V to 3.3V
VIN = 5V, COUT = 1μF, VEN = 0V to 3.3V
VIN = 12V, COUT = 1μF, VEN = 0V to 3.3V
VIN = 24V, COUT = 1μF, VEN = 0V to 3.3V
VIN = 5V, COUT = 1μF, VEN = 3.3V to 0V
VIN = 12V, COUT = 1μF, VEN = 3.3V to 0V
VIN = 24V, COUT = 1μF, VEN = 3.3V to 0V
VIN = 5V, COUT = 1μF, VEN = 3.3V to 0V
VIN = 12V, COUT = 1μF, VEN = 3.3V to 0V
VIN = 24V, COUT = 1μF, VEN = 3.3V to 0V
—
—
—
—
—
—
—
—
—
—
—
—
0.2
0.2
0.2
0.3
0.8
1.6
1
—
—
—
—
—
—
—
—
—
—
—
tDON
ms
ms
μs
tR
tDOFF
2
4
10
25
50
tF
μs
Fast Role Swap (FRS) Control and Timing
—
1.4
—
—
—
—
VFRSL
VFRSH
IFRS
FRS Threshold Voltage Low
FRS Threshold Voltage High
FRS Input Leakage Current
VFRS Falling
VFRS Rising
0.4
—
7
V
VIN = 5V, VFRS = 5V
μA
VIN = 5V, A Single Positive Pulse Width on
FRS and VFRSH = 3.3V, Guaranteed by
Design
tFRS_ON
FRS ON Time
600
—
—
—
—
μs
μs
VIN = 5V, COUT = 1μF, VFRS = 3.3V to 0V,
50% Falling Edge of VFRS to 90% Rising
Edge of VOUT, Guaranteed by Design
tDON_FRS
Output Turn-ON Delay Time with FRS
60
Discharge Control on IN and OUT Ports
RDISC1 / RDISC2
IN / OUT Discharge Resistance
—
—
—
—
—
VDISC1 = 5V, VDISC2 = 5V
105
115
—
Ω
Ω
V
VDISC1 = 3.3V, VDISC2 = 3.3V
VDISC1L / VDISC2L DISC1 / DISC2 Threshold Voltage Low VDISC1 /VDISC2 Falling
0.4
VDISC1H
VDISC2H
/
DISC1 / DISC2 Threshold Voltage
High
VDISC1 /VDISC2 Rising
1.4
—
—
V
V
A
Overcurrent Protection
VILIM
ILIM Bias Voltage
RILIM = 50kΩ
RILIM = 100kΩ
RILIM = 50kΩ
RILIM = 33.3kΩ
RILIM = 20kΩ
—
0.9
1.8
2.76
4.6
1
1.05
2
—
Current Limit, 1A
Current Limit, 2A
Current Limit, 3A
Current Limit, 5A
1.20
2.2
ILIM
3
3.24
5.4
5
1.125 ×
ILIM + 1.8
IFASTRIP
Fast-Trip Threshold
Guaranteed by Design
—
—
A
Current Monitoring Output
VIMON
Current Monitoring Output Voltage
—
—
—
—
4.5
—
V
μA/
A
GIMON
IMON to OUT Current Gain
IIMON / IOUT
10
Overvoltage Protection
—
—
—
—
—
—
—
—
—
—
IVLIM
VLIM Sourcing Current
VIN = 5V, RVLIM = 54.9kΩ
RVLIM = 54.9kΩ, VIN Rising
RVLIM = 240kΩ, VIN Rising
RVLIM = 54.9kΩ, VIN Falling
RVLIM = 240kΩ, VIN Falling
10
6
μA
VOVPRTH
Input Overvoltage Threshold, Rising
Input Overvoltage Threshold, Falling
24.5
5.5
24
V
VOVPFTH
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© Diodes Incorporated
DPS1135
Document number: DS40655 Rev. 1 - 2
DPS1135
Electrical Characteristics (continued) (@ TA = +25°C, VIN = 4.5V to 24V, CIN = COUT = 10μF, VEN = 3.3V, VFRS = 0V, CDV/DT
1nF, RVLIM = 240kΩ, RILIM = 27kΩ, unless otherwise specified.)
=
Symbol
Parameter
Conditions
Min
Typ.
Max
Unit
Reverse-Voltage Protection
VIN - VOUT Threshold Entering into
Reverse Protection
—
-30
—
VRVPFTH
VIN - VOUT Falling
mV
VIN - VOUT Threshold Exiting from
Reverse Protection
VRVPRTH
tRVPTD
VIN - VOUT Rising
—
—
—
0
2
—
—
Reverse Protection Response Time
μs
Fault Flag (FAULTB): Active-Low
VIN = 7V, RVLIM = 54.9kΩ, IFAULTB = 10mA
Sinking
RFAULTB
FAULTB Pull-Down Resistor
—
25
—
Ω
—
—
—
7
ILKGFAULTB
FAULTB Leakage Current
FAULTB Blanking Time
VIN = 5V, RVLIM = 54.9kΩ, VFAULTB = 5V
1
μA
tBLANKFAULTB
VIN = 5V, RVLIM = 54.9kΩ, VFAULTB = 5V
—
ms
Thermal Shutdown
—
—
+16
5
—
—
TSHDN
THYS
Thermal Shutdown Threshold
Thermal Shutdown Hysteresis
—
—
°C
+20
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© Diodes Incorporated
DPS1135
Document number: DS40655 Rev. 1 - 2
DPS1135
Performance Characteristics (@ TA = +25°C, CIN = COUT = 10μF, VEN = 3.3V, VFRS = 0V, CDV/DT = 1nF, RILIM = 27kΩ,
unless otherwise specified.)
Shutdown Current vs. Input Voltage
24
TA = 125°C
TA = 25°C
TA = -40°C
22
20
18
16
14
12
10
8
6
4
2
VEN = 0V
24
0
4
6
8
10
12
14
16
18
20
22
26
Input Voltage (V)
OUT Leakage Sinking Current vs. Output Voltage
EN Threshold Voltage vs. Ambient Temperature
40
35
30
25
20
15
10
5
1.0
0.9
0.8
0.7
0.6
0.5
TA = 125°C
TA = 25°C
TA = -40°C
VENH
VENL
VIN = 3.3V, VEN = 0V
0
4
6
8
10
12
14
16
18
20
22
24
26
-50
-30
-10
10
30
50
70
90
110
130
Output Voltage (V)
Ambient Temperature (°C)
IN DischargeResistance vs. Ambient Temperature
OUT Discharge Resistance vs. Ambient Temperature
200
190
180
170
160
150
140
130
120
110
100
90
200
190
180
170
160
150
140
130
120
110
100
90
VEN = 0V, VIN = 1V
VEN = 0V, VOUT = 1V
VDISC1 = 5V
VDISC2 = 5V
VDISC1 = 3.3V
VDISC2 = 3.3V
80
80
-50
-30
-10
10
30
50
70
90
110
130
-50
-30
-10
10
30
50
70
90
110
130
Ambient Temperature (°C)
Ambient Temperature (°C)
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© Diodes Incorporated
DPS1135
Document number: DS40655 Rev. 1 - 2
DPS1135
Performance Characteristics (continued) (@ TA = +25°C, CIN = COUT = 10μF, VEN = 3.3V, VFRS = 0V, CDV/DT = 1nF,
RILIM = 27kΩ, unless otherwise specified.)
ON Resistance vs. Input Voltage
45
IOUT = 1A
40
TA = 125°C
TA = 25°C
TA = -40°C
35
30
25
20
4
6
8
10
12
14
16
18
20
22
24
26
Input Voltage (V)
EN Turn ON with a 1.6Ω Load at 5V
VIN = 5V, RLOAD = 1.6Ω
EN Turn OFF with a 1.6Ω Load at 5V
VIN = 5V, RLOAD = 1.6Ω
VEN
VEN
2V/div
2V/div
VOUT
2V/div
VOUT
2V/div
IIN
2A/div
IIN
2A/div
500μs/div
500μs/div
EN Turn ON with a 7Ω Load at 20V
VIN = 20V, RLOAD = 6.7Ω
EN Turn OFF with a 7Ω Load at 20V
VIN = 20V, RLOAD = 6.7Ω
VEN
VEN
2V/div
2V/div
VOUT
10V/div
VOUT
10V/div
IIN
2A/div
IIN
2A/div
500μs/div
500μs/div
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© Diodes Incorporated
DPS1135
Document number: DS40655 Rev. 1 - 2
DPS1135
Performance Characteristics (continued) (@ TA = +25°C, CIN = COUT = 10μF, VEN = 3.3V, VFRS = 0V, CDV/DT = 1nF,
RILIM = 27kΩ, unless otherwise specified.)
OUT Always Short to Ground at 5V
OUT Always Short to Ground at 20V
VIN = 5V, OUT Port Short to Ground
VIN = 20V, OUT Port Short to Ground
VFAULTB
5V/div
VFAULTB
5V/div
VIN
5V/div
VIN
10V/div
VOUT
2V/div
VOUT
2V/div
IIN
2A/div
IIN
2A/div
50ms/div
50ms/div
Overcurrent Protection at 5V
Overcurrent Recovery at 5V
VIN = 5V, RLOAD = 100Ω to 1.2Ω
VIN = 5V, RLOAD = 1.2Ω to 100Ω
VOUT
VOUT
5V/div
5V/div
VFAULTB
5V/div
VFAULTB
5V/div
IOUT
2A/div
IOUT
2A/div
5ms/div
5ms/div
Input Overvoltage Protection and Recovery
Reverse-voltage Response
VIN = 5V to 7V then back to 5V, RVLIM = 56kΩ, RLOAD = 1KΩ
VIN = 5V, Supply 24V to OUT Port
VFAULTB
5V/div
IOUT
5A/div
VIN
2V/div
VIN
200mV/div
VOUT
2V/div
VOUT
10V/div
2ms/div
10μs/div
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© Diodes Incorporated
DPS1135
Document number: DS40655 Rev. 1 - 2
DPS1135
Application Information
General Description
The DPS1135 is a one-channel power switch designed to meet the input and output voltage/current requirement, which are common with many
hot-pluggable serial interfaces found in the computing and consumer electronics equipment. For example, DPS1135 is compatible to the
USB Power Delivery Specification Release 3.0, V1.0a and many popular USB Type-CTM applications.
Start-up Time
An external capacitor connected from the DV/DT pin to GND defines the slew rate of the output voltage at power-on:
dVOUT / dt = (IDV/DT / CDV/DT) × GDV/DT
Where:
•
•
•
•
dVOUT / dt is the desired output slew rate in V/ms
IDV/DT is in μA and is 1μA typical
CDV/DT is the ramp-up control setting capacitor in nF
GDV/DT is the gain of DV/DT to OUT and GDV/DT = 12
The total ramp time tDV/DT of VOUT increasing from 0 to VIN can be calculated using:
tDV/DT = 8.3 × 10-2 × VIN× CDV/DT
Where:
•
•
•
tDV/DT is the total ramp time in ms
VIN is in V
CDV/DT is in nF
Choosing a proper value for the capacitor CDV/DT ensures that the device is turned ON with the preset ramp-up imposed over the output voltage.
The in-rush current at power-up is limited by the regulated output voltage ramp or the limited current setting.
Start-up Time (ms)
COUT (μF)
RILIM (kΩ)
ILIM_MIN (A)
ILOAD_MAX (A) CDV/DT_MIN (nF)
VIN = 5V
0.21
VIN = 12V
0.51
VIN = 20V
0.85
10
10
30
30
43
82
18
30
43
82
3.10
3.10
2.09
1.04
3.10
3.10
2.09
1.04
5
3
2
1
5
3
2
1
0.51
0.51
0.51
0.51
3.6
0.21
0.51
0.85
10
0.21
0.51
0.85
10
0.21
0.51
0.85
100
100
100
100
1.50
3.60
6.00
3.6
1.50
3.60
6.00
3.6
1.50
3.60
6.00
3.6
1.50
3.60
6.00
Input Overvoltage Protection (OVP)
The voltage at the IN port is monitored continuously. Whenever voltage at the IN port is found to be larger than the VOVPRTH value, the built-in
overvoltage protection (OVP) fault-handling mechanism is triggered. The internal power MOSFET turns OFF to protect the downstream equipment
connected. The VOVPRTH value is determined by:
VOVPRTH = 0.1 × RVLIM + 0.5
Where:
•
•
•
VOVPRTH is in V
RVLIM is in kΩ
51kΩ ≤ RVLIM ≤ 270kΩ
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Application Information (continued)
Reverse-Voltage Protection (RVP)
The voltage difference, [VIN - VOUT], between the IN and OUT ports is monitored continuously. Once the voltage difference drops below the
VRVPFTH level, the device immediately turns OFF the internal power MOSFET to prevent the current flowing from the opposite direction. When the
reverse-voltage condition is no longer valid, i.e. [VIN - VOUT] becomes greater than the VRVPRTH level, the internal power MOSFET turns ON.
Overtemperature Protection (OTP)
During overload conditions, the output voltage drops with the limited current ILIM. It results in the increasing junction temperature TJ with the
increased power consumption on device. When TJ reaches to the thermal shutdown threshold TSHDN, the internal power MOSFET is turned OFF.
The internal MOSFET is turned ON again once the condition [TJ < (TSHDN - THYS)] occurs.
Overcurrent Protection (OCP)
The output current is monitored continuously. Whenever the output current IOUT is found to be larger than the ILIM value by over 2μs, the
embedded overcurrent protection (OCP) fault-handling mechanism is triggered. This trigger results in the output current clamping at the ILIM value
at hundreds of ms later, and the voltage dropping at OUT port. The ILIM value is set by RILIM
.
ILIM = 100 / RILIM
Where:
•
•
•
ILIM is in A
RILIM is in kΩ
18kΩ ≤ RILIM ≤ 200kΩ
ILIM (A)
Typ
0.55
1.05
1.50
2.00
2.50
3.00
3.50
4
R
ILIM (kΩ)
Min
0.50
0.90
1.35
1.80
2.25
2.76
3.22
3.68
4.6
Max
0.7
200
100
66.7
50
1.20
1.65
2.20
2.75
3.24
3.78
4.32
5.4
40
33.3
28.6
25
20
5
Short-Circuit Protection (SCP)
There are two behaviors to protect device under short-circuit conditions. One is fast-trip current detection. When the output current exceeds the
fast-trip threshold IFASTRIP, the device switches OFF the internal MOSFET.
IFASTRIP = 1.125 × ILIM + 1.8
Where:
•
IFASTRIP and ILIM is in A
Another is low output voltage detection. During heavy overload or short-circuit conditions, the output current is limited to ILIM, and the output
voltage drops quickly. When the output voltage drop is exceeded the capability of MOSFET, the power switch turns OFF. The device is operating
in auto-retry mode, and the cycle time is around 128ms.
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Application Information (continued)
Adjustable Current Monitoring Output (IMON)
A 100pF capacitor and a resistor RIMON connected in parallel between the IMON pin and GND generate an average current monitor output voltage
VIMON, which is proportional to the load current flowing through the device,
VIMON = 10-3 × GIMON × RIMON × IOUT
Where:
•
•
•
•
GIMON is the ratio of the IMON to the load current in μA/A and GIMON = 10
VIMON is in V
RIMON is in kΩ
IOUT is in A
The resistor RIMON must be chosen to ensure that the voltage at the IMON pin is less than 4.5V under the maximum load current IILIM
.
For example, if RIMON is selected as 50kΩ, there will be a 0.5V output on IMON pin at 1A load, and VIMON = 1.5V at 3A load. Connecting this IMON
pin to an ADC can help to monitor the current information of a system.
Fault Response
An external pull-up resistor is required. The device generates a warning flag whenever one of the following fault conditions becomes valid: input
overvoltage, reverse-voltage, overtemperature, short-circuit, overcurrent, ILIM pin short to ground. After a deglitch time-out of 7ms, the low-active
FAULTB signal is asserted. The FAULTB signal remains at low, and the internal power MOSFET remains OFF until the device exits from the
exception status.
Support of Fast Role Swap (FRS)
The DPS1135 is designed to support the Fast Role Swap (FRS) operation. This allows the system to change its role from being a power consumer
to being a power provider within the time limit defined in the USB Power Delivery Specification Release 3.0 V1.0a. Irrespective of the voltage level
at the EN pin, the relevant FRS control circuit inside the device is enabled at the rising edge of any positive pulse appearing at the FRS pin. When
the pulse width (tFRS_ON) is found to be larger than 600µs, the internal power MOSFET shall be turned ON within 60µs from the falling edge of the
pulse in the absence of the reverse-voltage condition. At the end of the 60µs, the voltage level at the OUT port shall be of 90% of the voltage level
at the IN port. Thereafter, while a subsequent rising edge at the EN pin shall always be ignored, the occurrence of a falling edge shall disable the
device. After the device shuts down, it will not resume proper operation until a rising edge appears at either the EN pin or the FRS pin.
EN
0V
tFRS_ON
FRS
600μs min.
0V
tDON_FRS
60μs max.
IN & OUT
0V
Power Switch ON
FRS Enabled
Exiting Reversed-
voltage Condition
FRS
Triggered
VOUT reaches 90% of VIN
Figure 1. FRS Control Sequence for Fast Role Swap, Power Switch ON at Falling Edge of FRS Signal After Exiting RVP Condition
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DPS1135
Application Information (continued)
EN
0V
tFRS_ON
FRS
600μs min.
0V
tDON_FRS
60μs max.
IN & OUT
0V
Power Switch ON
FRS
FRS Enabled
Triggered
Exiting Reversed-
voltage Condition
VOUT reaches 90% of VIN
Figure 2. FRS Control Sequence for Fast Role Swap, Power Switch ON When Exiting RVP Condition After FRS is Triggered (Falling Edge)
Discharge Function
To facilitate the various applications envisioned by the system designers, the input or output port can be discharged via two external controls:
DISC1 and DISC2. The internal discharge resistor at each port is approximately 100Ω. The discharge paths are OFF by default with an internal
1MΩ pull-down resistor between DISC1 (or DISC2) and GND. The settings are shown in the table below.
DISC1
DISC2
Description
0
0
1
1
0
1
0
1
Discharge Function Disabled
OUT Port is Discharged Until the pin DISC2 is Pulled Low
IN Port is Discharged Until the pin DISC1 is Pulled Low
Both IN and OUT ports are Discharged Simultaneously
Schottky Diode for Protection of Current Surge
When a cable is hot plugged in/out of the USB-C connector behind where the OUT port of the DPS1135 is connected, a large ground current can
be seen at the OUT port of the DPS1135. When the far end of a connected cable is short to ground, the OUT port of the DPS1135 could also see
a large ground current. With the Schottky diode, SBR3U40P1, populated as close as possible to the USB-C connector, no ground current can go
through the DPS1135 to cause false operation.
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DPS1135
Application Information (continued)
PCB Layout Consideration
1.
2.
3.
4.
Place the input/output capacitors CIN and COUT as close as possible to the IN and OUT pins.
The power traces, including the power ground, the VIN trace, and the VOUT trace, must be kept direct, short and wide.
Place the resistors and capacitors (RVLIM, RILIM, RIMON, CIMON, CDV/DT, and CVREG) near the device pins.
Connect the signal ground to the GND pin, and keep a single connection from GND pin to the power ground behind the input or output
capacitors.
5.
For better power dissipation, via holes are recommended to connect the exposed pad’s landing area to a large copper polygon on the other
side of the PCB. The copper polygons and exposed pad of SRC (common source nodes of internal power MOSFET) must not be
connected to any of the signal and power grounds on the PCB.
GND (Power)
SRC Copper Ploygon
Not connected to GND
CIN
COUT
DOUT
IN
IN
IN
1
2
3
4
5
6
17 OUT
16 OUT
15 OUT
14 VLIM
13 ILIM
VIN
VOUT
SRC
EN
FRS
GND
RVLIM
RILIM
12 DV/DT
CDV/DT
B
T
0
L
1
N
1
G
C
C
1
E
7
8
9
U
O
S
I
S
I
R
V
A
F
M
D
D
I
1
2
CVREG
RIMON CIMON
GND (Signal)
Figure 3. Suggested PCB Layout
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Document number: DS40655 Rev. 1 - 2
DPS1135
Ordering Information (Note 6)
DPS1135 X - X
Package
Packing
13: 13" Tape & Reel
FIA: V-QFN4040-17
13” Tape and Reel
Part Number
Marking
Reel Size (inches)
Tape Width (mm)
Quantity
Part Number Suffix
DPS1135FIA-13
DPS1135
13
12
4000/Tape & Reel
-13
Note:
6. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/.
Marking Information
Pin 1
Logo
Part No
YY: Year
WW: Week 01~52; 52
represents 52 and 53 week
DPS1135
Date Code
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DPS1135
Package Outline Dimensions
Please see http://www.diodes.com/package-outlines.html for the latest version.
V-QFN4040-17
A3
A1
A
Seating Plane
V-QFN4040-17
Dim Min Max Typ
D
( Pin #1 ID)
A
0.75 0.85 0.80
k( 3x
)
A1 0.00 0.05 0.02
A3
b
D
—
—
0.203
z1( 4x)
0.20 0.30 0.25
3.95 4.05 4.00
e
D2 2.775 2.975 2.875
3.95 4.05 4.00
E2 2.40 2.60 2.50
E2
E
E
e
k
L1
L
0.50 BSC
D2
—
—
—
—
0.35
0.10
L( 17x)
L1
0.35 0.45 0.40
z
z1
—
—
—
—
0.38
0.88
All Dimensions in mm
z( 2x
)
b( 17x)
Suggested Pad Layout
Please see http://www.diodes.com/package-outlines.html for the latest version.
V-QFN4040-17
X4
X3
X1( 2x)
C
Dimensions Value (in mm)
C
G
X
0.500
0.150
0.350
1.350
2.975
2.850
3.825
1.300
0.600
2.350
2.600
4.300
1.300
Y( 17x)
X1
X2
X3
X4
X5
Y
Y1
Y2
Y3
Y4
X2
C
Y4
Y2
Y3
Y1
X5
X( 11x)
G
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DPS1135
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2018, Diodes Incorporated
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