概述
规格参数
数据手册DSS3515M-7B 概述
15V LOW VCE(sat) PNP SURFACE MOUNT TRANSISTOR 15V低VCE （ sat）的PNP表面贴装晶体管 小信号双极晶体管
DSS3515M-7B 规格参数
| 是否无铅： | 不含铅 | 是否Rohs认证： | 符合 |
| 生命周期： | Active | 零件包装代码： | DFN |
| 包装说明： | CHIP CARRIER, R-PBCC-N3 | 针数： | 3 |
| Reach Compliance Code： | compliant | ECCN代码： | EAR99 |
| Factory Lead Time： | 15 weeks | 风险等级： | 1.7 |
| 外壳连接： | COLLECTOR | 最大集电极电流 (IC)： | 0.5 A |
| 集电极-发射极最大电压： | 15 V | 配置： | SINGLE |
| 最小直流电流增益 (hFE)： | 90 | JESD-30 代码： | R-PBCC-N3 |
| JESD-609代码： | e4 | 湿度敏感等级： | 1 |
| 元件数量： | 1 | 端子数量： | 3 |
| 最高工作温度： | 150 °C | 封装主体材料： | PLASTIC/EPOXY |
| 封装形状： | RECTANGULAR | 封装形式： | CHIP CARRIER |
| 峰值回流温度（摄氏度）： | 260 | 极性/信道类型： | PNP |
| 最大功率耗散 (Abs)： | 0.25 W | 认证状态： | Not Qualified |
| 子类别： | Other Transistors | 表面贴装： | YES |
| 端子面层： | Nickel/Palladium/Gold (Ni/Pd/Au) | 端子形式： | NO LEAD |
| 端子位置： | BOTTOM | 处于峰值回流温度下的最长时间： | 40 |
| 晶体管元件材料： | SILICON | 标称过渡频率 (fT)： | 340 MHz |
| Base Number Matches： | 1 |
DSS3515M-7B 数据手册
通过下载DSS3515M-7B数据手册来全面了解它。这个PDF文档包含了所有必要的细节，如产品概述、功能特性、引脚定义、引脚排列图等信息。
PDF下载DSS3515M
15V LOW VCE(sat) PNP SURFACE MOUNT TRANSISTOR
Features
Mechanical Data
•
•
Case: DFN1006-3
Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish ⎯ NiPdAu over Copper leadframe. Solderable
per MIL-STD-202, Method 208
•
•
•
•
•
•
Low Collector-Emitter Saturation Voltage, VCE(sat)
Ultra-Small Leadless Surface Mount Package
ESD: HBM 8kV, MM 400V
Complementary NPN Type Available (DSS2515M)
“Lead Free”, RoHS Compliant (Note 1)
Halogen and Antimony Free. "Green" Device (Note 2)
•
•
•
Weight: 0.0009 grams (Approximate)
DFN1006-3
C
B
B
C
E
E
Bottom View
Device Symbol
Top View
Device Schematic
Ordering Information (Note 3)
Product
DSS3515M-7
DSS3515M-7B
Marking
Reel size (inches)
Tape width (mm)
Quantity per reel
3,000
TB
TB
7
7
8
8
10,000
Notes:
1. No purposefully added lead.
2. Diodes Inc's "Green" policy can be found on our website at http://www.diodes.com
3. For packaging details, go to our website at http://www.diodes.com.
Marking Information
DSS3515M-7
DSS3515M-7B
TB = Product Type Marking Code
TB
Top View
Top View
Dot Denotes Collector Side
Bar Denotes Base and Emitter Side
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January 2011
© Diodes Incorporated
DSS3515M
Document number: DS31819 Rev. 3 - 2
DSS3515M
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Collector-Base Voltage
Symbol
VCBO
VCEO
VEBO
IC
Value
-15
Unit
V
Collector-Emitter Voltage
Emitter-Base Voltage
-15
V
-6
V
Collector Current - Continuous
Peak Pulse Collector Current
Peak Base Current
-500
-1
mA
A
ICM
-100
mA
IBM
Thermal Characteristics
Characteristic
Power Dissipation (Note 4) @ TA = 25°C
Thermal Resistance, Junction to Ambient (Note 4) @ TA = 25°C
Operating and Storage Temperature Range
Symbol
Value
250
Unit
mW
°C/W
°C
PD
500
Rθ
JA
-55 to +150
TJ, TSTG
Notes:
4. Device mounted on FR-4 PCB with minimum recommended pad layout.
1
D = 0.9
D = 0.7
D = 0.5
D = 0.3
0.1
R
(t) = r(t) * R
θJA
θJA
R
= 500°C/W
θJA
D = 0.1
P(pk)
T
D = 0.05
t
1
t
2
0.01
D = 0.02
- T = P * R (t)
J
A
θJA
Duty Cycle, D = t /t
1
2
D = 0.01
D = 0.005
D = Single Pulse
0.001
0.000001 0.00001 0.0001
0.001
0.01
0.1
1
10
100
1,000 10,000
t1, PULSE DURATION TIME (s)
Fig. 1 Transient Thermal Response
1,000
100
0.30
0.25
Single Pulse
(t) = r(t) * R
θJA
R
θ
JA
R
= 500°C/W
θJA
T
- T = P * R (t)
A θJA
J
0.20
0.15
0.10
10
1
R
= 500°C/W
JA
0.05
0
θ
0.1
1E-06
0
50
100
150
200
0.0001
t1, PULSE DURATION TIME (s)
Fig. 2 Single Pulse Maximum Power Dissipation
0.01
1
100
10,000
TA, AMBIENT TEMPERATURE (
Fig. 3 Power Dissipation vs. Ambient Temperature (Note 4)
°C)
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www.diodes.com
January 2011
© Diodes Incorporated
DSS3515M
Document number: DS31819 Rev. 3 - 2
DSS3515M
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 5)
Emitter-Base Breakdown Voltage
Symbol
Min
Typ
Max
Unit
Test Condition
IC = -100μA, IE = 0
IC = -10mA, IB = 0
IE = -100μA, IC = 0
VCB = -15V, IE = 0
-15
-15
-6
V
V
V
BVCBO
BVCEO
BV)EBO
⎯
⎯
⎯
⎯
⎯
⎯
-100
-50
nA
μA
nA
Collector Cutoff Current
ICBO
IEBO
⎯
⎯
⎯
⎯
V
CB = -15V, IE = 0, TA = 150°C
Emitter Cutoff Current
-100
VEB = -5V, IC = 0
ON CHARACTERISTICS (Note 5)
VCE = -2V, IC = -10mA
VCE = -2V, IC = -100mA
⎯
⎯
⎯
⎯
⎯
⎯
200
150
90
DC Current Gain
hFE
⎯
V
CE = -2V, IC = -500mA
C = -10mA, IB = -0.5mA
IC = -200mA, IB = -10mA
C = -500mA, IB = -50mA
I
⎯
⎯
⎯
⎯
⎯
⎯
-25
-150
-250
Collector-Emitter Saturation Voltage
mV
VCE(sat)
I
Collector-Emitter Saturation Resistance
Base-Emitter Saturation Voltage
Base-Emitter Turn On Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
500
-1.1
-0.9
mΩ
V
RCE(sat)
VBE(sat)
VBE(on)
⎯
⎯
⎯
⎯
⎯
⎯
IC = -500mA, IB = -50mA
IC = -500mA, IB = -50mA
VCE = -2V, IC = -100mA
V
10
pF
Cobo
fT
⎯
100
⎯
340
VCB = -10V, f = 1.0MHz
Current Gain-Bandwidth Product
MHz
⎯
VCE = -5V, IC = -100mA, f = 100MHz
Notes:
5. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤2%.
1.00
800
700
T
= 150°C
A
I
= -5mA
= -4mA
0.80
0.60
0.40
B
600
500
T
= 125°C
A
I
B
T
= 85°C
= 25°C
A
I
= -3mA
= -2mA
B
400
300
200
T
A
I
B
I
= -1mA
B
0.20
0
T
= -55°C
A
100
0
1
10
-IC, COLLECTOR CURRENT (mA)
Fig. 5 Typical DC Current Gain vs. Collector Current
100
1,000
0
1
2
3
4
5
-VCE, COLLECTOR-EMITTER VOLTAGE (V)
Fig. 4 Typical Collector Current
vs. Collector-Emitter Voltage
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January 2011
© Diodes Incorporated
DSS3515M
Document number: DS31819 Rev. 3 - 2
DSS3515M
1
1.0
0.8
I
/I = 10
B
C
I
/I = 10
B
C
T
= -55°C
= 25°C
A
0.6
0.1
T
A
T
= 150°C
A
T
= 85°C
T
= 125°C
A
A
T
= 85°C
A
0.4
0.2
T
= 125°C
A
T
= 25°C
A
T
= 150°C
A
T
= -55°C
A
0.01
1
10
100
1,000
0.1
1
10
100
1,000
-IC, COLLECTOR CURRENT (mA)
-IC, COLLECTOR CURRENT (mA)
Fig. 6 Typical Collector-Emitter Saturation Voltage
vs. Collector Current
Fig. 7 Typical Base-Emitter Saturation Voltage
vs. Collector Current
1.0
0.9
100
10
V
= -2V
CE
T
I
/I = 20
B
C
0.8
0.7
0.6
0.5
0.4
0.3
0.2
= -55°C
A
T
= 25°C
A
T
= 85°C
A
1
T
= 125°C
A
T
= -55°C
A
T
= 150°C
T
= 150°C
A
A
T
= 25°C
A
T
= 85°C
T
A
0.1
0
= 125°C
A
0.1
0.1
1
10
100
1,000
0.1
1
10
100
1,000
-IC, COLLECTOR CURRENT (mA)
-IC, COLLECTOR CURRENT (mA)
Fig. 9 Typical Collector-Emitter Saturation Resistance
vs. Collector Current
Fig. 8 Typical Base-Emitter Turn-On Voltage
vs. Collector Current
Package Outline Dimensions
A
DFN1006-3
Dim Min
Max Typ
0.53 0.50
0.05 0.03
0.20 0.15
0.55 0.50
A
A1
b1
b2
D
0.47
0
0.10
0.45
A1
D
0.95 1.075 1.00
0.55 0.675 0.60
E
b1
e
0.35
0.30 0.25
0.30 0.25
⎯
0.20
0.20
⎯
⎯
L1
L2
L3
e
b2
E
0.40
⎯
All Dimensions in mm
L2
L3
L1
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January 2011
© Diodes Incorporated
DSS3515M
Document number: DS31819 Rev. 3 - 2
DSS3515M
Suggested Pad Layout
C
Dimensions Value (in mm)
X1
G2
Z
G1
G2
X
1.1
0.3
0.2
0.7
0.25
0.4
0.7
X
X1
Y
G1
C
Y
Z
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2011, Diodes Incorporated
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January 2011
© Diodes Incorporated
DSS3515M
Document number: DS31819 Rev. 3 - 2
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