DZTA42 [DIODES]
NPN SURFACE MOUNT TRANSISTOR; NPN表面贴装晶体管
| 型号： | DZTA42 |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | NPN SURFACE MOUNT TRANSISTOR |
| 文件： | 总4页 (文件大小：234K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DZTA42
NPN SURFACE MOUNT TRANSISTOR
Features
•
•
•
•
•
•
Epitaxial Planar Die Construction
3
2
1
Complementary PNP Type Available (DZTA92)
Ideally Suited for Automated Assembly Processes
Ideal for Medium Power Switching or Amplification Applications
Lead Free By Design/RoHS Compliant (Note 1)
"Green" Device (Note 2)
4
SOT-223
Mechanical Data
COLLECTOR
3 E
2 C
2,4
•
•
Case: SOT-223
Case Material: Molded Plastic, "Green" Molding
Compound. UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminals: Finish - Matte Tin annealed over Copper Leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
Marking & Type Code Information: See Page 3
Ordering Information: See Page 3
Weight: 0.115 grams (approximate)
C 4
1
•
•
BASE
B
1
3
EMITTER
•
•
•
TOP VIEW
Schematic and Pin Configuration
Maximum Ratings
@TA = 25°C unless otherwise specified
Characteristic
Symbol
VCBO
VCEO
VEBO
IC
Value
300
300
6
Unit
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
V
V
Continuous Collector Current
500
mA
Thermal Characteristics
Characteristic
Symbol
Value
1
Unit
W
Power Dissipation at @TA = 25°C (Note 3)
Pd
125
Thermal Resistance, Junction to Ambient @TA = 25°C (Note 3)
Operating and Storage Temperature Range
°C/W
Rθ
JA
-55 to +150
Tj, TSTG
°C
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 4)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Symbol
Min
Typ
Max
Unit
Test Conditions
300
300
6
V
V
V
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
0.1
0.1
IC = 100μA, IE = 0
IC = 1mA, IB = 0
IE = 100μA, IC = 0
VCB = 200V, IE = 0
VEB = 6V, IC = 0
⎯
⎯
μA
μA
Emitter Cut-Off Current
IEBO
ON CHARACTERISTICS (Note 4)
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
0.5
0.9
⎯
⎯
⎯
V
V
VCE(SAT)
VBE(SAT)
⎯
⎯
25
40
40
⎯
⎯
⎯
⎯
⎯
IC = 20mA, IB = 2mA
IC = 20mA, IB = 2mA
IC = 1mA, VCE = 10V
IC = 10mA, VCE = 10V
IC = 30mA, VCE = 10V
DC Current Gain
hFE
⎯
SMALL SIGNAL CHARACTERISTICS
Transition Frequency
Output Capacitance
50
MHz
pF
fT
Cobo
⎯
⎯
⎯
3
I
C = 10mA, VCE = 20V, f = 100MHz
⎯
VCB = 20V, f = 1MHz
Notes:
1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB, 1” x 0.85” x 0.052”; pad layout as shown on page 4 or in Diodes Inc. suggested pad layout document AP02001, which
can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
4. Measured under pulsed conditions. Pulse Test: Pulse width = 300μs, Duty Cycle ≤ 2%
DS30582 Rev. 5 - 2
1 of 4
DZTA42
© Diodes Incorporated
www.diodes.com
R
= 125°C
JA
θ
0.5
0.4
0.3
0.2
0.1
0
0.01
0.1
1
10
100
1,000
IC, COLLECTOR CURRENT (mA)
Fig. 4 Collector-Emitter Saturation Voltage
vs. Collector Current
DS30582 Rev. 5 - 2
2 of 4
DZTA42
© Diodes Incorporated
www.diodes.com
Ordering Information (Note 5)
Packaging
Shipping
Device
SOT-223
2500/Tape & Reel
DZTA42-13
Notes: 5. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
(Top View)
K3M = Product Type Marking Code
YWW = Date Code Marking
Y = Last digit of year ex: 7 = 2007
WW = Week code 01 - 52
WW
Y
K3M
Package Outline Dimensions
SOT-223
Dim Min Max Typ
1.55 1.65 1.60
A
A1 0.010 0.15 0.05
b1 2.90 3.10 3.00
b2 0.60 0.80 0.70
C
D
E
0.20 0.30 0.25
6.45 6.55 6.50
3.45 3.55 3.50
E1 6.90 7.10 7.00
e
e1
L
—
—
—
—
4.60
2.30
0.55 0.75 0.65
0.84 0.94 0.89
Q
All Dimensions in mm
DS30582 Rev. 5 - 2
3 of 4
DZTA42
© Diodes Incorporated
www.diodes.com
Suggested Pad Layout: (Based on IPC-SM-782)
(Unit:mm)
IMPORTANT NOTICE
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product
described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall
assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website,
harmless against all damages.
LIFE SUPPORT
Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written
approval of the President of Diodes Incorporated.
DS30582 Rev. 5 - 2
4 of 4
DZTA42
© Diodes Incorporated
www.diodes.com
相关型号：
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DZTA42Q-13
Small Signal Bipolar Transistor, 0.5A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon,
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