EMF21-7 [DIODES]
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon, GREEN, ULTRA SMALL, PLASTIC PACKAGE-6;
| 型号： | EMF21-7 |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon, GREEN, ULTRA SMALL, PLASTIC PACKAGE-6 光电二极管 晶体管 |
| 文件： | 总5页 (文件大小：144K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
EMF21
COMPLEX TRANSISTOR ARRAY
Features
•
•
Epitaxial Planar Die Construction
One PNP Bipolar Transistor and One NPN Pre-Biased
Transistor
•
•
•
Ultra-Small Surface Mount Package
Lead Free By Design/RoHS Compliant (Note 1)
"Green" Device (Note 2)
SOT-563
Mechanical Data
•
•
Case: SOT-563
Case Material: Molded Plastic, “Green” Molding
Compound. UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminal Connections: See Diagram
Terminals: Finish – Matte Tin Annealed Over Copper
Leadframe. Solderable per MIL-STD-202, Method 208
Marking Information: See Page 4
Ordering Information: See Page 4
Weight: 0.003 grams (approximate)
(3)
(2) (1)
Q
6
1
5
2
4
3
Q
1
2
•
•
•
R1
R2
(4)
Schematic and Pin Configuration
(5)
(6)
TOP VIEW
•
•
•
Maximum Ratings, Total Device @TA = 25°C unless otherwise specified
Characteristic
Power Dissipation (Note 3)
Symbol
PD
Value
300
Unit
mW
°C/W
°C
Thermal Resistance, Junction to Ambient Air (Note 3)
Operating and Storage Temperature Range
417
Rθ
JA
-55 to +150
Tj, TSTG
Maximum Ratings, PNP Transistor, Q1 @TA = 25°C unless otherwise specified
Characteristic
Symbol
VCBO
VCEO
VEBO
IC
Value
Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
-15
V
-12
-6
V
V
Continuous Collector Current
Peak Pulsed Collector Current
-500
-1.0
mA
A
ICP
Maximum Ratings, Pre-Biased NPN Transistor, Q2 @TA = 25°C unless otherwise specified
Characteristic
Symbol
VCC
VIN
Value
50
Unit
V
Supply Voltage
Input Voltage
-10 to +40
100
V
Collector Current
Output Current
mA
mA
IC
50
IO
Notes:
1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at
http://www.diodes.com/datasheets/ap02001.pdf.
DS31201 Rev. 4 - 2
1 of 5
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EMF21
© Diodes Incorporated
Electrical Characteristics, PNP Transistor, Q1 @TA = 25°C unless otherwise specified
Characteristic (Note 4)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
Min
-15
-12
-6
Typ
⎯
⎯
⎯
⎯
⎯
⎯
-100
280
5
Max
⎯
⎯
Unit
V
Test Condition
C = -10μA, IE = 0
C = -1.0mA, IB = 0
I
I
I
V
V
⎯
E = -10μA, IC = 0
VCB = -15V, IE = 0
-100
-100
680
-250
⎯
nA
nA
⎯
mV
MHz
pF
⎯
⎯
270
Collector Cutoff Current
IEBO
V
V
EB = -6V, IC = 0
DC Current Gain
hFE
CE = -2.0V, IC = -10mA
Collector-Emitter Saturation Voltage
Gain-Bandwidth Product
VCE(SAT)
fT
⎯
⎯
⎯
IC = -200mA, IB = -10mA
V
V
CE = -2.0V, IE = 10mA, f = 100MHz
CB = -10V, IE = 0, f = 1MHz
Collector Output Capacitance
Cobo
⎯
Electrical Characteristics, Pre-Biased NPN Transistor, Q2 @TA = 25°C unless otherwise specified
Characteristic
Symbol
VI(off)
VI(on)
VO(on)
II
Min
⎯
3
Typ
⎯
⎯
Max
0.5
⎯
0.3
0.88
0.5
⎯
Unit
V
Test Condition
CC = 5V, IO = 100μA
O = 0.3V, IO = 10mA
V
V
Input Voltage
V
Output Voltage
Input Current
0.1
V
⎯
⎯
⎯
30
⎯
7
IO/ II = 10mA/0.5 mA
VI = 5V
mA
μA
⎯
MHz
kΩ
⎯
⎯
⎯
⎯
250
10
1
Output Current
DC Current Gain
IO(off)
GI
V
V
V
CC = 50V, VI = 0V
O = 5V, IO = 5mA
Gain-Bandwidth Product (Note 5)
Input Resistance
fT
⎯
13
CE = 10V, IE = -5mA, f = 100MHz
R1
⎯
⎯
Resistance Ratio
0.8
1.2
R2/R1
Notes:
4. Short duration pulse test used to minimize self-heating effect.
5. Characteristics of the transistor. For reference only.
1,000
900
1,200
V
= -2V
CE
1,000
800
I
I
= -5mA
= -4mA
800
B
B
T
T
= 150°C
A
A
700
= 85°C
= 25°C
600
500
I
I
= -3mA
= -2mA
B
B
600
400
T
T
A
A
400
300
I
= -1mA
B
= -55°C
200
200
0
100
0
0
1
2
3
4
5
1
10
100
1,000
-VCE, COLLECTOR-EMITTER VOLTAGE (V)
-IC, COLLECTOR CURRENT (mA)
Fig. 2 Typical DC Current Gain
vs. Collector Current (Q1, PNP)
Fig. 1 Typical Collector Current
vs. Collector-Emitter Voltage (Q1, PNP)
DS31201 Rev. 4 - 2
2 of 5
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EMF21
© Diodes Incorporated
1
1.2
1.0
V
= -2V
CE
I
/I = 20
B
C
0.8
0.6
0.4
T
= -55°C
A
0.1
T
T
= 25°C
= 85°C
A
T
= 150°C
A
A
T
= 85°C
A
T
= 25°C
A
T
= 150°C
0.2
0
A
T
= -55°C
A
0.01
0.1
1
10
100
1,000
0.1
1
10
100
1,000
-IC, COLLECTOR CURRENT (mA)
-IC, COLLECTOR CURRENT (mA)
Fig. 3 Typical Collector-Emitter Saturation Voltage
vs. Collector Current (Q1, PNP)
Fig. 4 Typical Base-Emitter Turn-On Voltage
vs. Collector Current (Q1, PNP)
60
1.2
1.0
I
/I = 20
B
C
f = 1MHz
50
40
0.8
0.6
0.4
T
= -55°C
A
30
20
C
T
T
= 25°C
= 85°C
obo
A
A
T
= 150°C
A
0.2
0
10
0
C
ibo
0.1
1
10
100
1,000
0.01
0.1
VR, REVERSE VOLTAGE (V)
Fig. 6 Typical Capacitance Characteristics (Q1, PNP)
1
10
100
-IC, COLLECTOR CURRENT (mA)
Fig. 5 Typical Base-Emitter Saturation Voltage
vs. Collector Current (Q1, PNP)
500
400
1,000
100
V
= 5V
O
300
T
= 150°C
A
T
= 85°C
A
T
= 25°C
A
200
100
0
T
= -55°C
A
V
= -2V
10
CE
f = 100MHz
1
0.1
0
20
40
60
80
100
1
10
IO, OUTPUT CURRENT (mA)
Fig. 8 Typical DC Current Gain
vs. Output Current (Q2, NPN PBT)
100
IC, COLLECTOR CURRENT (mA)
Fig. 7 Typical Gain-Bandwidth Product
vs. Emitter Current (Q1, PNP)
DS31201 Rev. 4 - 2
3 of 5
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EMF21
© Diodes Incorporated
1
10
I
/I = 20
I
O
V
= 5V
CC
T
= 150°C
A
T
= -55°C
= 25°C
A
0.1
1
T
= 85°C
T
A
A
T
= 85°C
A
A
T
= 25°C
A
T
= -55°C
A
T
= 150°C
0.1
0.01
0.01
10
0.1
1
10
1
10
100
IO, OUTPUT CURRENT (mA)
Fig. 9 Typical Output Voltage
vs. Output Current (Q2, NPN PBT)
IO, OUTPUT CURRENT (mA)
Fig. 10 Typical Input Off Voltage
vs. Output Current (Q2, NPN PBT)
5
V
= 0.3V
O
f = 1MHz
4
3
2
T
= -55°C
= 25°C
A
1
T
T
A
= 85°C
A
T
= 150°C
A
1
0
0.1
0.01
0.01
0.1
1
10
100
0.1
IO, OUTPUT CURRENT (mA)
Fig. 11 Typical Input On Voltage
vs. Output Current (Q2, NPN PBT)
1
10
100
VR, REVERSE VOLTAGE (V)
Fig. 12 Typical Output Capacitance
Characteristics (Q2, NPN PBT)
Ordering Information (Note 6)
Packaging
Shipping
Device
SOT-563
3000/Tape & Reel
EMF21-7
Notes: 6. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
B12 = Product Type Marking Code
YM = Date Code Marking
Y = Year ex: U = 2007
M = Month ex: 9 = September
B12
YM
Date Code Key
Year
2007
2008
2009
2010
2011
2012
Code
U
V
W
X
Y
Z
Month
Code
Jan
1
Feb
2
Mar
3
Apr
4
May
5
Jun
6
Jul
7
Aug
8
Sep
9
Oct
O
Nov
N
Dec
D
DS31201 Rev. 4 - 2
4 of 5
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EMF21
© Diodes Incorporated
Package Outline Dimensions
SOT-563
Min Max
A
Dim
A
Typ
0.15 0.30 0.25
1.10 1.25 1.20
1.55 1.70 1.60
B
C
B
C
D
0.50
-
-
D
G
H
0.90 1.10 1.00
1.50 1.70 1.60
0.56 0.60 0.60
0.10 0.30 0.20
0.10 0.18 0.11
G
H
K
M
K
L
M
L
All Dimensions in mm
IMPORTANT NOTICE
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product
described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall
assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website,
harmless against all damages.
LIFE SUPPORT
Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written
approval of the President of Diodes Incorporated.
DS31201 Rev. 4 - 2
5 of 5
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EMF21
© Diodes Incorporated
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