ES3DB-7 [DIODES]
Rectifier Diode, 1 Phase, 1 Element, 3A, 200V V(RRM), Silicon, PLASTIC, SMB, 2 PIN;
| 型号： | ES3DB-7 |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | Rectifier Diode, 1 Phase, 1 Element, 3A, 200V V(RRM), Silicon, PLASTIC, SMB, 2 PIN 功效 光电二极管 |
| 文件： | 总2页 (文件大小：86K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ES3A/B - ES3D/B
3.0A SURFACE MOUNT SUPER-FAST RECTIFIER
SPICE MODELS: ES3A ES3B ES3C
ES3D ES3AB ES3BB ES3CB ES3DB
Features
·
·
·
Glass Passivated Die Construction
Super-Fast Recovery Time For High Efficiency
Low Forward Voltage Drop and High Current
Capability
SMB
Min
SMC
Min
B
·
·
·
Surge Overload Rating to 100A Peak
Ideally Suited for Automated Assembly
Plastic Material: UL Flammability
Classification Rating 94V-0
Dim
A
Max
3.94
4.57
2.21
0.31
5.59
0.20
1.52
2.62
Max
6.22
7.11
3.18
0.31
8.13
0.20
1.52
2.62
3.30
4.06
1.96
0.15
5.00
0.10
0.76
2.00
5.59
6.60
2.75
0.15
7.75
0.10
0.76
2.00
A
J
C
D
B
C
D
Mechanical Data
·
·
E
Case: Molded Plastic
Terminals: Solder Plated Terminal - Solderable
per MIL-STD-202, Method 208
Polarity: Cathode Band or Cathode Notch
SMB Weight: 0.093 grams (approx.)
SMC Weight: 0.21 grams (approx.)
Mounting Position: Any
G
H
G
H
J
·
·
·
·
·
E
All Dimensions in mm
AB, BB, CB, DB Suffix Designates SMB Package
A, B, C, D, Suffix Designates SMC Package
Marking: Type Number
@ TA = 25°C unless otherwise specified
Maximum Ratings and Electrical Characteristics
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Symbol
ES3A/B
50
ES3B/B
100
ES3C/B
150
ES3D/B
200
Unit
VRRM
VRWM
VR
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
VR(RMS)
IO
RMS Reverse Voltage
35
70
105
140
V
A
Average Rectified Output Current
@ TT = 100°C
3.0
100
0.9
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave Superimposed on Rated Load
(JEDEC Method)
IFSM
A
Forward Voltage
@ IF = 3.0A
VFM
IRM
V
10
500
Peak Reverse Current
at Rated DC Blocking Voltage
@ TA 25°C
=
mA
@ TA = 125°C
trr
Cj
Reverse Recovery Time (Note 3)
25
45
15
ns
pF
Typical Junction Capacitance (Note 2)
RqJT
Tj, TSTG
Typical Thermal Resistance, Junction to Terminal (Note 1)
Operating and Storage Temperature Range
K/W
°C
-65 to +150
Notes:
1. Unit mounted on PC board with 5.0 mm2 (0.013 mm thick) copper pads as heat sink.
2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
3. Measured with IF = 0.5A, IR = 1.0A, Irr = 0.25A. See Figure 5.
DS14003 Rev. E1-2
1 of 2
ES3A/B - ES3D/B
www.diodes.com
ã Diodes Incorporated
8.0
6.0
4.0
2.0
10
1.0
0.1
0.01
0
0.4
0.8
1.2
1.6
100
25
50
75
125
150
175
TT, TERMINAL TEMPERATURE (°C)
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Typical Forward Characteristics
Fig. 1 Forward Current Derating Curve
1000
120
100
80
Single Half-Sine-Wave
(JEDEC Method)
Tj = 125°C
100
60
40
10
Tj = 25°C
20
0
1.0
0
40
80
120
1
10
100
NUMBER OF CYCLES AT 60Hz
Fig. 3 Surge Current Derating Curve
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
Fig. 4 Typical Reverse Characteristics
trr
+0.5A
Device
Under
Test
(-)
0A
(+)
Pulse
Generator
(Note 2)
50V DC
Approx
-0.25A
(-)
(+)
Oscilloscope
(Note 1)
-1.0A
Set time base for 50/100 ns/cm
Fig. 5 Reverse Recovery Time Characteristic and Test Circuit
DS14003 Rev. E1-2
2 of 2
ES3A/B - ES3D/B
www.diodes.com
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