FMMT38ATA [DIODES]
Small Signal Bipolar Transistor, 0.3A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, SOT-23, 3 PIN;
| 型号： | FMMT38ATA |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | Small Signal Bipolar Transistor, 0.3A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, SOT-23, 3 PIN 晶体 晶体管 达林顿晶体管 局域网 |
| 文件： | 总2页 (文件大小：78K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
FMMT38A /B Not Recommended for
New Design Please Use FMMT38C
FMMT38A
FMMT38B
FMMT38C
SOT23 NPN SILICON PLANAR MEDIUM
POWER DARLINGTON TRANSISTORS
ISSUE 3 – AUGUST 1996
FEATURES
*
*
60 Volt VCEO
Gain of 10K at IC=0.5 Amp
E
C
PARTMARKING DETAILS –
FMMT38A – 4J
FMMT38B – 5J
FMMT38C – 7J
B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
ICM
VALUE
UNIT
V
Collector-Base Voltage
80
60
Collector-Emitter Voltage
Emitter-Base Voltage
V
10
V
Peak Pulse Current
800
mA
mA
mW
°C
Continuous Collector Current
Power Dissipation at Tamb=25°C
Operating and Storage Temperature Range
IC
300
Ptot
330
Tj:Tstg
-55 to +150
ELECTRICAL CHARACTERISTICS (at T
= 25°C).
MAX.
V
amb
PARAMETER
SYMBOL
MIN.
UNIT CONDITIONS.
IC=10 A, IE=0
Collector-Base
Breakdown Voltage
V(BR)CBO
80
Collector-Emitter
VCEO(sus) 60
V(BR)EBO 10
ICBO
V
V
IC=10mA, IB=0
IE=10 A, IC=0
VCB=60V, IE=0
VEB=8V, IC=0
Sustaining Voltage
Emitter-Base
Breakdown Voltage
Collector Cut-Off
Current
100
nA
Emitter Cut-Off Current IEBO
100
nA
V
Collector-Emitter
Saturation Voltage
VCE(sat)
1.25
IC=800mA, IB=8mA*
Base-Emitter
Turn-on Voltage
VBE(on)
1.8
V
IC=800mA, VCE=5V*
Static
FMMT38A hFE
500
IC=100mA, VCE=5V*
IC=500mA, VCE=5V*
Forward
Current
Transfer
Ratio
1000
FMMT38B
FMMT38C
2000
4000
IC=100mA, VCE=5V*
IC=500mA, VCE=5V*
5000
10000
IC=100mA, VCE=5V*
IC=500mA, VCE=5V*
*Measured under pulsed conditions. Pulse width=300 s. Duty cycle 2%
Spice parameter data is available upon request for this device
3 - 100
FMMT38A /B Not Recommended for
New Design Please Use FMMT38C
FMMT38A
FMMT38B
FMMT38C
TYPICAL CHARACTERISTICS
VCE=5V
IC/IB=100
1.0
0.8
1.6
+100°C
1.4
1.2
-55°C
1.0
+25°C
+25°C
0.8
0.6
0.6
0.4
0.2
+100°C
0.4
+175°C
-55°C
0.2
0
0.001
0.01
10
0.1
1
0.001
0.01
0.1
1
10
C
I
Collector Current (Amps)
-
C
Collector Current (Amps)
I -
CE(sat)
V
C
v I
FE
h
C
v I
VCE=5V
IC/IB=100
2.0
2.0
1.5
-55°C
-55°C
+25°C
1.5
1.0
0.5
+25°C
+100°C
1.0
0.5
+100°C
+175°C
+175°C
0.001
0.01
0.1
1
10
0.001
0.01
0.1
1
10
C
I
Collector Current (Amps)
C
I -
Collector Current (Amps)
-
VBE(sat) v IC
BE(on)
C
v I
V
1
D=1 (D.C.)
150
100
50
100m
DC
D=0.5
D=0.2
1s
100ms
10ms
1ms
10m
1m
100us
D=0.1
D=0.05
Single Pulse
0
100m
1
10
100
0.0001 0.001
0.01
0.1
1
10
100
Pulse Width (seconds)
VCE - Collector Emitter Voltage (V)
Maximum transient thermal impedance
Safe Operating Area
3 - 101
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