FMMT417TA [DIODES]
SOT23 NPN SILICON PLANAR AVALANCHE TRANSISTOR; SOT23 NPN硅平面晶体管雪崩
| 型号： | FMMT417TA |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | SOT23 NPN SILICON PLANAR AVALANCHE TRANSISTOR |
| 文件： | 总2页 (文件大小：97K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SOT23 NPN SILICON PLANAR
AVALANCHE TRANSISTOR
FMMT415
FMMT417
ISSUE 4 - OCTOBER 1995
✪
FEATURES
*
*
Specifically designed for Avalanche mode operation
60A Peak Avalanche Current (Pulse width=20ns)
E
C
APPLICATIONS
*
*
*
Laser LED drivers
B
Fast edge generation
High speed pulse generators
PARTMARKING DETAIL
FMMT415 415
FMMT417 417
SOT23
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
IC
FMMT415 FMMT417
UNIT
V
Collector-Base Voltage
260
100
320
100
Collector-Emitter Voltage
V
Emitter-Base Voltage
6
V
Continuous Collector Current
Peak Collector Current (Pulse Width=20ns)
Power Dissipation
500
60
mA
A
ICM
Ptot
330
mW
°C
Operating and Storage Temperature Range
ELECTRICAL CHARACTERISTICS (at T
Tj:Tstg
-55 to +150
= 25°C unless otherwise stated).
amb
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown
Voltage
FMMT415 V(BR)CES
260
V
IC=1mA
Tamb= -55 to +150°C
FMMT417
320
100
V
V
IC=1mA
Collector-Emitter Breakdown
Voltage
VCEO(sus)
IC=100µA
Emitter-Base Breakdown Voltage V(BR)EBO
6
V
IE=10µA
Collector Cut-Off Current
ICBO
0.1
10
VCB=180V
VCB=180V,
Tamb=100°C
µA
µA
Emitter Cut-Off Current
IEBO
0.1
0.5
VEB=4V
µA
Collector-Emitter Saturation
Voltage
VCE(sat)
V
IC=10mA, IB=1mA*
Base-Emitter
Saturation Voltage
VBE(sat)
ISB
hFE
fT
0.9
V
IC=10mA, IB=1mA*
Current in Second Breakdown
(Pulsed)
15
25
A
A
VC=200V, CCE=620pF
VC=250V, CCE=620pF
Static Forward Current Transfer
Ratio
25
IC=10mA, VCE=10V*
Transition Frequency
40
MHz IC=10mA, VCE=20V
f=20MHz
Collector-Base Capacitance
Ccb
8
pF
VCB=20V, IE=0
f=100MHz
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
3 - 104
FMMT415
FMMT417
TYPICAL CHARACTERISTICS
40
180
160
140
120
1. >4x10 Operations Without Failure
2. 10 Operations To Failure
3. 10 Operations To Failure
30
20
10
V
V
= 250V
= 200V
100
80
3.
2.
60
40
20
0
1.
0
0
20 40 60 80 100 120 140 160 180
-60 -40 -20
0
20 40 60 80 100 120 140 160 180
Temperature (°C)
Pulse Width (ns)
Maximum Avalanche Current
v Pulse Width
I
USB
v Temperature
for the specified conditions
100
80
60
40
20
0
220
200
180
160
140
120
100
V
=10V
Risetime of Base
Drive Current = 5mA/ns
175°C
25°C
I
=50mA
-55°C
I
I
=100mA
=200mA
100µA
1mA
10mA
100mA
1A
100p
1n
10n
100n
Collector Current
Collector-Emitter Capacitance (F)
Minimum starting voltage
as a function of capacitance
hFE v IC
180
160
150
175
170
I
=60mA
I
I
=100mA
=200mA
165
160
140
120
C = 620pF
155
150
145
C=620pF
100
1
10
-60 -40 -20
0
20 40 60 80 100 120 140 160 180
Risetime of Base Drive (mA/ns)
Temperature (°C)
Minimum starting voltage
as a function of drive current
Minimum starting voltage
as a function of temperature
3 - 105
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