FMMT489 [DIODES]
SOT23 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR; SOT23 NPN硅平面中功率晶体管
| 型号： | FMMT489 |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | SOT23 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR |
| 文件： | 总1页 (文件大小：54K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SOT23 NPN SILICON PLANAR
MEDIUM POWER TRANSISTOR
FMMT489
ISSUE3 - OCTOBER 1995
✪
FEATURES
*
Very low equivalent on-resistance; RCE(sat) 175mΩ at 1A
E
C
COMPLEMENTARY TYPE
PARTMARKING DETAIL
FMMT589
489
B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
IC
VALUE
UNIT
V
Collector-Base Voltage
50
Collector-Emitter Voltage
30
V
Emitter-Base Voltage
5
V
Continuous Collector Current
Peak Pulse Current
1
4
A
ICM
A
Base Current
IB
200
mA
mW
°C
Power Dissipation at Tamb=25°C
Operating and Storage Temperature Range
ELECTRICAL CHARACTERISTICS (at T
Ptot
500
Tj:Tstg
= 25°C).
-55 to +150
amb
PARAMETER
SYMBOL MIN.
MAX.
UNIT
CONDITIONS.
Breakdown Voltages
V(BR)CBO
VCEO(sus)
V(BR)EBO
ICBO
50
30
5
V
IC=100µA
IC=10mA*
IE=100µA
VCB=30V
VCES=30V
VEB=4V
V
V
Collector Cut-Off Current
Emitter Cut-Off Current
100
100
100
nA
nA
nA
ICES
IEBO
Collector-Emitter
Saturation Voltage
VCE(sat)
0.3
0.6
V
V
IC=1A, IB=100mA*
IC=2A, IB=200mA*
Base-Emitter
Saturation Voltage
VBE(sat)
VBE(on)
hFE
1.1
V
IC=1A, IB=100mA*
Base-Emitter
Turn On Voltage
1.0
V
IC=1A, VCE=2V*
Static Forward Current
Transfer Ratio
100
100
60
IC=1mA, VCE=2V*
IC=1A, VCE=2V*
IC=2A, VCE=2V*
IC=4A, VCE=2V*
300
10
20
Transition Frequency
fT
150
MHz
pF
IC=50mA, VCE=10V
f=100MHz
Collector-Base
Breakdown Voltage
Cobo
VCB=10V, f=1MHz
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
For typical characteristics graphs see FMMT449 datasheet
3 - 114
相关型号：
FMMT491-TP
Small Signal Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, ROHS COMPLIANT, PLASTIC, PACKAGE-3
MCC
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