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FMMT723-7 [DIODES]

Transistor;
FMMT723-7
型号： FMMT723-7
厂家： DIODES INCORPORATED    DIODES INCORPORATED
描述：

Transistor
文件： 总4页 (文件大小：455K)
中文：  中文翻译
下载：  下载PDF数据表文档文件
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SuperSOT  
FMMT717 FMMT718  
FMMT720 FMMT722  
FMMT723  
SOT23 PNP SILICON POWER  
(SWITCHING) TRANSISTORS  
ISSUE 3 JUNE 1996  
FEATURES  
* 625mW POWER DISSIPATION  
*
*
*
*
*
IC CONT 2.5A  
E
C
IC Up To 10A Peak Pulse Current  
Excellent hfe Characteristics Up To 10A (pulsed)  
Extremely Low Saturation Voltage E.g. 10mV Typ.  
Exhibits extremely low equivalent on-resistance; RCE(sat)  
B
DEVICE TYPE  
FMMT717  
FMMT718  
FMMT720  
FMMT722  
FMMT723  
COMPLEMENT  
FMMT617  
FMMT618  
FMMT619  
–
PARTMARKING  
RCE(sat)  
717  
718  
720  
722  
723  
72mΩ at 2.5A  
97mΩ at 1.5A  
163mΩ at 1.5A  
-
-
FMMT624  
ABSOLUTE MAXIMUM RATINGS  
FMMT FMMT FMMT FMMT FMMT  
PARAMETER  
SYMBOL  
717  
-12  
-12  
-5  
718  
-20  
-20  
-5  
720  
722  
-70  
-70  
-5  
723  
-100  
-100  
-5  
UNIT  
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Peak Pulse Current**  
Continuous Collector Current  
Base Current  
VCBO  
VCEO  
VEBO  
ICM  
IC  
-40  
-40  
V
-5  
V
-10  
-2.5  
-6  
-4  
-3  
-2.5  
-1  
A
-1.5  
-1.5  
-1.5  
A
IB  
-500  
625  
-55 to +150  
mA  
mW  
°C  
Power Dissipation at Tamb=25°C* Ptot  
Operating and Storage  
Temperature Range  
Tj:Tstg  
*Maximum power dissipation is calculated assuming that the device is mounted on a ceramic  
substrate measuring 15x15x0.6mm  
**Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%  
Spice parameter data is available upon request for these devices  
3 - 159  
FMMT722  
FMMT723  
ELECTRICAL CHARACTERISTICS (at T  
amb  
= 25°C unless otherwise stated).  
FMMT722  
FMMT723  
PARAMETER  
SYMBOL  
V
UNIT CONDITIONS.  
MIN. TYP. MAX. MIN. TYP. MAX.  
Collector-Base  
Breakdown Voltage  
-70  
-70  
-5  
-150  
-125  
-8.8  
-100 -200  
V
V
V
I =-100µA  
I =-10mA*  
I =-100µA  
Collector-Emitter  
Breakdown Voltage  
V
V
I
-100 -160  
Emitter-Base  
Breakdown Voltage  
-5  
-8.8  
Collector Cut-Off  
Current  
-100  
-100  
-100  
-50  
nA  
-100 nA  
V
V
=-60V  
=-80V  
Emitter Cut-Off  
Current  
I
-100 nA  
V
=-4V  
Collector Emitter  
Cut-Off Current  
I
nA  
-100 nA  
V
V
=-60V  
=-80V  
Collector-Emitter  
Saturation Voltage  
V
-35  
-50  
-80  
mV  
mV  
I =-0.1A, I =-10mA*  
I =-0.5A, I =-20mA*  
I =-0.5A, I =-50mA*  
I =-1A, I =-100mA*  
I =-1A, I =-150mA*  
I =-1.5A, I =-200mA*  
-135 -200  
-140 -220  
-175 -260  
-125 -200 mV  
mV  
-210 -330 mV  
mV  
Base-Emitter  
Saturation Voltage  
V
V
h
-0.89 -1.0  
V
I =-1A, I =-150mA*  
I =-1.5A, I =-200mA*  
-0.94 -1.05  
Base-Emitter  
Turn-On Voltage  
-0.71 -1.0  
V
I =-1A, V =-10V*  
I =-1.5A, V =-5V*  
-0.78 -1.0  
470  
Static Forward  
Current Transfer  
Ratio  
300  
300  
I =-10mA, V =-5V*  
I =-10mA, V =-10V*  
I =-0.1A, V =-5V*  
I =-0.1A, V =-10V*  
I =-0.5A, V =-10V*  
I =-1A, V =-5V*  
300  
475  
450  
300  
250  
450  
375  
175  
40  
275  
60  
250  
30  
I =-1A, V =-10V*  
I =-1.5A, V =-5V*  
I =-1.5A, V =-10V*  
I =-3A, V =-5V*  
10  
Transition  
Frequency  
f
150  
200  
150  
200  
MHz I =-50mA, V =-10V  
f=100MHz  
Output Capacitance  
Turn-On Time  
C
t
20  
13  
20  
pF  
ns  
ns  
V
=-10V, f=1MHz  
14  
50  
V
I
=-50V, I =-0.5A  
=I =-50mA  
40  
Turn-Off Time  
t
700  
760  
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%  
3 - 165  
FMMT723  
TYPICAL CHARACTERISTICS  
0.6  
0.5  
0.4  
0.3  
0.2  
0.1  
0.0  
0.6  
0.5  
0.4  
0.3  
0.2  
0.1  
0.0  
1mA  
10mA  
100mA  
1A  
10A  
1mA  
10mA  
100mA  
1A  
10A  
10A  
100  
Collector Current  
Collector Current  
VCE(SAT) vs IC  
VCE(SAT) vs IC  
1.0  
1.4  
0.8  
0.6  
0.4  
0.2  
1.2  
1.0  
0.8  
0.6  
0.4  
450  
225  
0.2  
0.0  
0.0  
1mA  
1mA  
10mA  
100mA  
1A  
10A  
10mA  
100mA  
1A  
Collector Current  
Collector Current  
VBE(SAT) vs IC  
hFE vs IC  
SINGLE PULSE TEST  
T
= 25 deg C  
10  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0.0  
1.0  
0.1  
µ
0.01  
1mA  
10mA  
100mA  
1A  
10A  
0.1  
1
10  
VCE (VOLTS)  
Collector Current  
Safe Operating Area  
VBE(ON) vs IC  
3 - 167  
FMMT617 FMMT624  
FMMT618 FMMT625  
FMMT619  
FMMT717 FMMT722  
FMMT718 FMMT723  
FMMT720  
SuperSOT Series  
THERMAL CHARACTERISTICS AND DERATING INFORMATION  
DERATING CURVE  
MAXIMUM TRANSIENT THERMAL RESISTANCE  
* Reference above figures, Devices were mounted on a 15mmx15mm ceramic substrate  
3 - 158  

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