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FMMTA64 [DIODES]

SOT23 PNP SILICON PLANAR DARLINGTON TRANSISTOR; SOT23封装PNP硅平面达林顿晶体管
FMMTA64
型号： FMMTA64
厂家： DIODES INCORPORATED    DIODES INCORPORATED
描述：

SOT23 PNP SILICON PLANAR DARLINGTON TRANSISTOR
SOT23封装PNP硅平面达林顿晶体管

晶体 晶体管 达林顿晶体管 局域网
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SOT23 PNP SILICON PLANAR  
DARLINGTON TRANSISTOR  
ISSUE 3 – MARCH 2001  
FMMTA64  
✪
PARTMARKING DETAIL –  
FMMTA64 - Z2V  
E
C
COMPLEMENTARY TYPES – FMMTA64 - FMMTA14  
B
SOT23  
ABSOLUTE MAXIMUM RATINGS.  
PARAMETER  
SYMBOL  
VALUE  
UNIT  
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
VCBO  
VCEO  
VEBO  
ICM  
-30  
-30  
V
-10  
V
Peak Pulse Current  
-800  
mA  
mA  
mA  
mW  
°C  
Continuous Collector Current  
Peak Base Current  
IC  
-500  
IBM  
-200  
Power Dissipation at Tamb=25°C  
Operating and Storage Temperature Range  
Ptot  
330  
Tj:Tstg  
-55 to +150  
ELECTRICAL CHARACTERISTICS (at T  
= 25°C).  
amb  
PARAMETER  
SYMBOL  
FMMTA64  
UNIT  
CONDITIONS.  
MIN.  
MAX.  
Collector-Base Breakdown  
Voltage  
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
ICBO  
-30  
-30  
-10  
V
IC=-10µA, IE=0  
Collector-Emitter Breakdown  
Voltage  
V
IC=-10mA, IB=0*  
Emitter-Base Breakdown  
Voltage  
V
IE=-10µA, IC=0  
Collector Cut-Off  
Current  
-0.1  
-0.1  
VCB=-30V, IE=0  
µA  
µA  
Emitter Cut-Off Current  
IEBO  
hFE  
VCE=-10V  
Static Forward Current  
Transfer Ratio  
10K  
20K  
IC=-10mA, VCE=5V*  
IC=-100mA, VCE=5V*  
Collector-Emitter Saturation  
Voltage  
VCE(sat)  
VBE(sat)  
fT  
-1.5  
-2.0  
V
IC=-100mA, IB=-0.1mA*  
Base-Emitter  
Saturation Voltage  
V
IC=-100mA, IB=-0.1mA*  
Transition  
Frequency  
125  
MHz  
IC=-50mA, VCE=-5V  
f=20MHz  
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%  
For typical characteristics graphs see FZTA64 datasheet.  
TBA  

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