FZT603TC [DIODES]
2A, 80V, NPN, Si, POWER TRANSISTOR, SOT-223, 4 PIN;
| 型号： | FZT603TC |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | 2A, 80V, NPN, Si, POWER TRANSISTOR, SOT-223, 4 PIN 晶体 晶体管 达林顿晶体管 开关 光电二极管 局域网 |
| 文件： | 总3页 (文件大小：125K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SOT223 NPN SILICON PLANAR MEDIUM
POWER DARLINGTON TRANSISTOR
ISSUE 3 NOVEMBER 1995
FZT603
FEATURES
*
*
*
2A continuous current
Useful hFE up to 6A
Fast Switching
C
E
PARTMARKING DETAIL DEVICE TYPE IN FULL
C
B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
ICM
VALUE
UNIT
V
Collector-Base Voltage
100
80
10
6
Collector-Emitter Voltage
Emitter-Base Voltage
V
V
Peak Pulse Current
A
Continuous Collector Current
Power Dissipation
IC
2
A
Ptot
2
W
Operating and Storage Temperature Range
Tj:Tstg
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at T
= 25°C unless otherwise stated).
amb
PARAMETER
SYMBOL
V(BR)CBO
MIN. TYP.
MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
100
240
110
16
V
V
V
IC=100µA
IC=10mA*
IE=100µA
Collector-Emitter
Breakdown Voltage
V(BR)CEO
V(BR)EBO
ICBO
80
Emitter-Base Breakdown
Voltage
10
Collector Cut-Off Current
0.01
10
V
CB=80V
µA
µA
VCB=80V, T =100°C
amb
Emitter Cut-Off Current
Collector Cut-Off Current
IEBO
0.1
10
VEB=8V
µA
µA
ICES
VCES=80V
Collector-Emitter
Saturation Voltage
VCE(sat)
0.79
0.80
0.88
0.99
0.86
0.88
0.90
1.00
1.13
V
V
V
V
V
IC=0.25A, IB=0.25mA*
IC=0.4A, IB=0.4mA*
IC=1A, IB=1mA*
IC=2A, IB=20mA*
IC=2A, IB=20mA
Tj=150°C
FZT603
ELECTRICAL CHARACTERISTICS (Continued)
PARAMETER
SYMBOL
VBE(sat)
MIN. TYP.
1.7
MAX. UNIT CONDITIONS.
Base-Emitter
Saturation Voltage
1.95
1.75
100k
V
V
IC=2A, IB=20mA*
IC=2A, VCE=5V*
Base-Emitter Turn-On Voltage VBE(on)
1.5
Static Forward
Current Transfer Ratio
hFE
3k
5k
3k
2k
14k
15k
14k
10k
2k
IC=50mA, VCE=5V*
IC=500mA, VCE=5V*
IC=1A, VCE=5V*
IC=2A, VCE=5V*
IC=5A, VCE=5V*
IC=6A, VCE=5V*
750
Transition Frequency
fT
150
MHz
IC=100mA, VCE=10V
f=20MHz
Output Capacitance
Output Capacitance
Switching Times
Cibo
Cobo
ton
90
pF
pF
µs
µs
VEB=500mV, f=1MHz
VCB=10V, f=1MHz
15
0.5
1.6
IC=0.5A, VCE=10V
IB1=IB2=0.5mA
toff
*Measured under pulsed conditions. Pulse width=300ms. Duty cycle ≤2%
Spice parameter data is available upon request for this device
FZT603
TYPICAL CHARACTERISTICS
I
- Collector Current (Amps)
I
- Collector Current (Amps)
hFE v IC
VCE(sat) v IC
I
- Collector Current (Amps)
I
- Collector Current (Amps)
VBE(sat) v IC
VBE(on) v IC
Single Pulse Test
µ
V
- Collector Voltage (Volts)
Safe Operating Area
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