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FZT855 [DIODES]

SOT223 NPN SILICON PLANAR; SOT223 NPN硅平面
FZT855
元器件型号： FZT855
生产厂家： DIODES INCORPORATED    DIODES INCORPORATED
描述和应用：

SOT223 NPN SILICON PLANAR
SOT223 NPN硅平面

晶体 晶体管 功率双极晶体管 开关 光电二极管 局域网
PDF文件： 总3页 (文件大小：168K)
下载文档：  下载PDF数据表文档文件
型号参数：FZT855参数
 查看货源

FZT855TA

 150V NPN MEDIUM POWER TRANSISTOR IN SOT223

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62 DIODES

FZT855TC

 Power Bipolar Transistor, 5A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin,

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0 ZETEX

FZT857

 SOT223 NPN SILICON PLANAR HIGH CURRENT

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43 DIODES

FZT857

 Up to 3.5 Amps continuous collector current, up to 5 Amp peak, VCEO = 300V

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38 TYSEMI

FZT857

 NPN Silicon Planar High Current Transistor

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93 KEXIN

FZT857

 NPN SILICON PLANAR HIGH CURRENT (HIGH PERFORMANCE)TRANSISTOR

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183 ZETEX

FZT857

 SOT223 NPN SILICON PLANAR HIGH CURRENT (HIGH PERFORMANCE)TRANSISTOR

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104 ZETEX

FZT857_03

 SOT223 NPN SILICON PLANAR HIGH CURRENT (HIGH PERFORMANCE)TRANSISTOR

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31 ZETEX

FZT857QTA

 300V NPN MEDIUM POWER TRANSISTOR IN SOT223

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45 DIODES

FZT857TA

 300V NPN MEDIUM POWER TRANSISTOR IN SOT223

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55 DIODES

FZT857TA

 Power Bipolar Transistor, 3.5A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin,

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1 DIODES

FZT857TC

 Power Bipolar Transistor, 3.5A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin

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1 DIODES

FZT869

 Extremely low equivalent on-resistance; RCE(sat)44mÙ at 5A, Excellent gain charateristics specified upto 20 Amp

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22 TYSEMI

FZT869

 SOT223 NPN SILICON PLANAR HIGH CURRENT

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31 DIODES

FZT869

 NPN Silicon Planar High Current (High Performance) Transistor

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67 KEXIN
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