GBJ10005 [DIODES]
10A GLASS PASSIVATED BRIDGE RECTIFIER; 10A玻璃钝化整流桥
| 型号： | GBJ10005 |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | 10A GLASS PASSIVATED BRIDGE RECTIFIER |
| 文件： | 总2页 (文件大小：68K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
GBJ10005 - GBJ1010
10A GLASS PASSIVATED BRIDGE RECTIFIER
Features
·
·
·
·
·
·
Glass Passivated Die Construction
High Case Dielectric Strength of 1500VRMS
Low Reverse Leakage Current
Surge Overload Rating to 170A Peak
Ideal for Printed Circuit Board Applications
Plastic Material - UL Flammability
Classification 94V-0
UL Listed Under Recognized Component
Index, File Number E94661
GBJ
Dim
A
B
C
D
E
Min
29.70
19.70
17.00
3.80
7.30
9.80
2.00
0.90
2.30
Max
30.30
20.30
18.00
4.20
L
A
M
K
7.70
·
G
H
I
10.20
2.40
B
D
S
N
_
Mechanical Data
1.10
J
P
J
2.70
·
·
Case: Molded Plastic
Terminals: Plated Leads, Solderable per
MIL-STD-202, Method 208
H
I
C
K
L
3.0 X 45°
R
4.40
3.40
3.10
2.50
0.60
10.80
4.80
3.80
3.40
2.90
0.80
11.20
·
·
·
·
·
Polarity: Molded on Body
M
N
P
Mounting: Through Hole for #6 Screw
Mounting Torque: 5.0 in-lbs Maximum
Weight: 6.6 grams (approx.)
Marking: Type Number
G
E
E
R
S
All Dimensions in mm
@ TA = 25°C unless otherwise specified
Maximum Ratings and Electrical Characteristics
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
GBJ
GBJ
GBJ
1002
GBJ
1004
GBJ
1006
GBJ
1008
GBJ
1010
Characteristic
Symbol
Unit
10005 1001
VRRM
VRWM
VR
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
50
35
100
70
200
140
400
600
420
800
560
1000
700
V
VR(RMS)
IO
RMS Reverse Voltage
280
10
V
A
Average Forward Rectified Output Current
@ TC= 110°C
Non-Repetitive Peak Forward Surge Current, 8.3 ms single
half-sine-wave superimposed on rated load
(JEDEC method)
IFSM
170
A
Forward Voltage per element
@ IF = 5.0A
VFM
IR
1.05
V
10
500
Peak Reverse Current
at Rated DC Blocking Voltage
@TC 25°C
=
mA
@ TC = 125°C
I2t Rating for Fusing (t < 8.3ms) (Note 1)
I2t
Cj
120
55
A2s
pF
Typical Junction Capacitance per Element (Note 2)
Typical Thermal Resistance, Junction to Case (Note 3)
Operating and Storage Temperature Range
RqJC
Tj, TSTG
1.4
°C/W
°C
-65 to +150
Notes:
1. Non-repetitive, for t > 1.0ms and < 8.3ms.
2. Measured at 1.0 MHz and applied reverse voltage of 4.0V DC.
3. Thermal resistance from junction to case per element. Unit mounted on 150 x 150 x 1.6mm copper plate heat sink.
DS21218 Rev. D-2
1 of 2
GBJ10005-GBJ1010
12
10
1.0
10
8
with heatsink
TJ = 25°C
6
4
2
0.1
without heatsink
Resistive or
Inductive load
Pulse width = 300µs
0
0.01
25
50
75
100
125
150
0
0.4
0.8
1.2
1.6 1.8
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Typical Forward Characteristics (per element)
TC, CASE TEMPERATURE (°C)
Fig. 1 Forward Current Derating Curve
180
160
100
Tj = 25°C
f = 1MHz
Single half-sine-wave
(JEDEC method)
TJ = 150°C
120
80
10
40
0
1
1
100
10
NUMBER OF CYCLES AT 60 Hz
Fig. 3 Maximum Non-Repetitive Surge Current
1
10
100
VR, REVERSE VOLTAGE (V)
Fig. 4 Typical Junction Capacitance
1000
TJ = 150°C
TJ = 125°C
100
TJ = 100°C
10
1.0
TJ = 25°C
0.1
0
20
40
60
80
100
120
140
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
Fig. 5 Typical Reverse Characteristics
DS21218 Rev. D-2
2 of 2
GBJ10005-GBJ1010
相关型号：
GBJ10005-TP
Bridge Rectifier Diode, 1 Phase, 10A, 50V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC, GBJ, 4 PIN
MCC
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