GBJ1502 [DIODES]
15A GLASS PASSIVATED BRIDGE RECTIFIER; 15A玻璃钝化整流桥
| 型号： | GBJ1502 |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | 15A GLASS PASSIVATED BRIDGE RECTIFIER |
| 文件： | 总2页 (文件大小：65K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
GBJ15005 - GBJ1510
15A GLASS PASSIVATED BRIDGE RECTIFIER
Features
·
·
·
·
·
·
Glass Passivated Die Construction
High Case Dielectric Strength of 1500VRMS
Low Reverse Leakage Current
Surge Overload Rating to 240A Peak
Ideal for Printed Circuit Board Applications
Plastic Material - UL Flammability
Classification 94V-0
UL Listed Under Recognized Component
Index, File Number E94661
GBJ
Dim
A
B
C
D
E
Min
29.70
19.70
17.00
3.80
7.30
9.80
2.00
0.90
2.30
Max
30.30
20.30
18.00
4.20
L
A
M
K
7.70
·
G
H
I
10.20
2.40
B
D
S
N
_
Mechanical Data
1.10
J
P
J
2.70
H
I
·
·
Case: Molded Plastic
Terminals: Plated Leads, Solderable per
MIL-STD-202, Method 208
C
K
L
3.0 X 45°
R
4.40
3.40
3.10
2.50
0.60
10.80
4.80
3.80
3.40
2.90
0.80
11.20
·
·
·
·
·
Polarity: Molded on Body
M
N
P
Mounting: Through Hole for #6 Screw
Mounting Torque: 5.0 in-lbs Maximum
Weight: 6.6 grams (approx)
G
E
E
R
S
Marking: Type Number
All Dimensions in mm
@ TA = 25°C unless otherwise specified
Maximum Ratings and Electrical Characteristics
Single phase, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
GBJ
GBJ
GBJ
1502
GBJ
1504
GBJ
1506
GBJ
1508
GBJ
1510
Characteristic
Symbol
Unit
15005 1501
VRRM
VRWM
VR
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
50
35
100
70
200
140
400
600
420
800
560
1000
700
V
VR(RMS)
RMS Reverse Voltage
280
15
V
A
Average Forward Rectified Output Current @ TC = 100°C
IO
Non-Repetitive Peak Forward Surge Current, 8.3 ms single
half-sine-wave superimposed on rated load
(JEDEC method)
IFSM
240
A
Forward Voltage (per element)
@ IF = 7.5A DC
VFM
IR
1.05
V
Peak Reverse Current
at Rated DC Blocking Voltage
@ TC 25°C
=
10
500
µA
@ TC = 125°C
I2t Rating for Fusing (t < 8.3ms) (Note 1)
I2t
Cj
240
60
A2s
pF
Typical Junction Capacitance per Element (Note 2)
Typical Thermal Resistance, Junction to Case (Note 3)
Operating and Storage Temperature Range
RqJC
Tj, TSTG
0.8
°C/W
°C
-65 to +150
Notes:
1. Non-repetitive, for t > 1ms and < 8.3 ms.
2. Measured at 1.0 MHz and applied reverse voltage of 4.0V DC.
3. Thermal resistance from junction to case per element. Unit mounted on 300 x 300 x 1.6mm copper plate heat sink.
DS21219 Rev. D-2
1 of 2
GBJ15005-GBJ1510
15
10
100
10
Resistive or
inductive load
Tj = 25°C
With heatsink
Pulse width: 300µs
1.0
0.1
5.0
Without heatsink
0
0.01
40
120
0
0.4
1.2
1.6
2.0
0
160
0.8
80
TC, CASE TEMPERATURE (°C)
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Typical Forward Characteristics
Fig. 1 Forward Current Derating Curve
250
200
100
Single Half-Sine Wave
(JEDEC Method)
10
100
Tj = 25°C
Tj = 25°C
f = 1 MHz
0
1.0
1
10
100
1.0
10
100
VR, REVERSE VOLTAGE (V)
Fig. 4 Typical Junction Capacitance
NUMBER OF CYCLES AT 60 Hz
Fig. 3 Maximum Non-Repetitive Surge Current
1000
Tj = 125°C
Tj = 100°C
100
10
Tj = 50°C
Tj = 25°C
40
1.0
0.1
0
20
60
80
100
120
PERCENT OF PEAK REVERSE VOLTAGE (%)
Fig. 5 Typical Reverse Characteristics
DS21219 Rev. D-2
2 of 2
GBJ15005-GBJ1510
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