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GBJ2010

更新时间：2024-09-18 02:21:38
品牌：DIODES
描述：20A GLASS PASSIVATED BRIDGE RECTIFIER

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GBJ2010 概述

20A GLASS PASSIVATED BRIDGE RECTIFIER 20A玻璃钝化整流桥 桥式整流器 桥式整流二极管

GBJ2010 规格参数

是否Rohs认证： 不符合生命周期：Obsolete
包装说明：PLASTIC, GBJ, 4 PIN针数：4
Reach Compliance Code：not_compliantHTS代码：8541.10.00.80
风险等级：5.19其他特性：UL RECOGNIZED
最小击穿电压：1000 V外壳连接：ISOLATED
配置：BRIDGE, 4 ELEMENTS二极管元件材料：SILICON
二极管类型：BRIDGE RECTIFIER DIODE最大正向电压 (VF)：1.05 V
JESD-30 代码：R-PSFM-T4JESD-609代码：e0
最大非重复峰值正向电流：240 A元件数量：4
相数：1端子数量：4
最高工作温度：150 °C最大输出电流：20 A
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：FLANGE MOUNT峰值回流温度（摄氏度）：235
认证状态：Not Qualified最大重复峰值反向电压：1000 V
子类别：Bridge Rectifier Diodes表面贴装：NO
端子面层：Tin/Lead (Sn85Pb15)端子形式：THROUGH-HOLE
端子位置：SINGLE处于峰值回流温度下的最长时间：10
Base Number Matches：1

GBJ2010 数据手册

通过下载GBJ2010数据手册来全面了解它。这个PDF文档包含了所有必要的细节，如产品概述、功能特性、引脚定义、引脚排列图等信息。

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GBJ20005 - GBJ2010  
20A GLASS PASSIVATED BRIDGE RECTIFIER  
Features  
·
·
·
·
·
·
Glass Passivated Die Construction  
High Case Dielectric Strength of 1500V  
GBJ  
RMS  
Dim  
A
B
C
D
E
Min  
29.70  
19.70  
17.00  
3.80  
7.30  
9.80  
2.00  
0.90  
2.30  
Max  
30.30  
20.30  
18.00  
4.20  
Low Reverse Leakage Current  
Surge Overload Rating to 240A Peak  
Ideal for Printed Circuit Board Applications  
L
Plastic Material - UL Flammability  
Classification 94V-0  
A
M
K
7.70  
·
UL Listed Under Recognized Component  
Index, File Number E94661  
G
H
I
10.20  
2.40  
B
D
S
N
_
1.10  
J
Mechanical Data  
P
J
2.70  
H
I
K
L
3.0 X 45°  
C
·
·
Case: Molded Plastic  
R
4.40  
3.40  
3.10  
2.50  
0.60  
10.80  
4.80  
3.80  
3.40  
2.90  
0.80  
11.20  
Terminals: Plated Leads, Solderable per  
MIL-STD-202, Method 208  
M
N
P
·
·
·
·
·
Polarity: Molded on Body  
Mounting: Through Hole for #6 Screw  
Mounting Torque: 5.0 in-lbs Maximum  
Weight: 6.6 grams (approx)  
G
E
E
R
S
Marking: Type Number  
All Dimensions in mm  
Maximum Ratings and Electrical Characteristics @ T = 25°C unless otherwise specified  
A
Single phase, 60Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
GBJ GBJ  
20005 2001  
GBJ  
2002  
GBJ  
2004  
GBJ  
2006  
GBJ  
2008  
GBJ  
2010  
Characteristic  
Symbol  
Unit  
VRRM  
VRWM  
VR  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
50  
35  
100  
70  
200  
140  
400  
600  
420  
800  
560  
1000  
700  
V
VR(RMS)  
RMS Reverse Voltage  
280  
20  
V
A
Average Forward Rectified Output Current @ TC = 110°C  
IO  
Non-Repetitive Peak Forward Surge Current, 8.3 ms single  
half-sine-wave superimposed on rated load  
(JEDEC method)  
IFSM  
240  
A
Forward Voltage per element  
@ IF = 10A  
VFM  
IR  
1.05  
V
Peak Reverse Current  
at Rated DC Blocking Voltage  
@ TA = 25°C  
@ TC = 125°C  
10  
500  
µA  
I2t Rating for Fusing (t < 8.3 ms) (Note 1)  
I2t  
Cj  
240  
60  
A2s  
pF  
Typical Junction Capacitance per Element (Note 2)  
Typical Thermal Resistance Junction to Case (Note 3)  
Operating and Storage Temperature Range  
RqJC  
Tj, TSTG  
0.8  
°C/W  
°C  
-65 to +150  
Notes:  
1. Non-repetitive, for t > 1ms and < 8.3 ms.  
2. Measured at 1.0 MHz and applied reverse voltage of 4.0V DC.  
3. Thermal resistance from junction to case per element. Unit mounted on 300 x 300 x 1.6mm aluminum plate heat sink.  
DS21220 Rev. D-2  
1 of 2  
GBJ20005-GBJ2010  
25  
20  
100  
With heatsink  
10  
1.0  
15  
10  
5
Without heatsink  
0.1  
Tj = 25°C  
Resistive or  
Inductive load  
Pulse width = 300µs  
0
25  
75  
50  
100  
125  
150  
0.01  
0
0.4  
0.8  
1.2  
1.6  
2.0  
VF, INSTANTANEOUS FORWARD VOLTAGE (V)  
Fig. 2 Typical Forward Characteristics (per element)  
TC, CASE TEMPERATURE (°C)  
Fig. 1 Forward Current Derating Curve  
250  
100  
10  
1
Tj = 25°C  
f = 1MHz  
Tj = 25°C  
Single half-sine-wave  
(JEDEC method)  
200  
150  
100  
50  
0
1
100  
10  
1
10  
100  
VR, REVERSE VOLTAGE (V)  
Fig. 4 Typical Junction Capacitance  
NUMBER OF CYCLES AT 60 Hz  
Fig. 3 Maximum Non-Repetitive Surge Current  
1000  
100  
Tj = 125°C  
Tj = 100°C  
10  
Tj = 50°C  
1.0  
Tj = 25°C  
0.1  
0
20  
40  
60  
80  
100  
120  
140  
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)  
Fig. 5 Typical Reverse Characteristics  
DS21220 Rev. D-2  
2 of 2  
GBJ20005-GBJ2010  

GBJ2010 替代型号

型号 制造商 描述 替代类型 文档
GBJ2010-F DIODES 20A GLASS PASSIVATED BRIDGE RECTIFIER 类似代替
GBJ2010-BP MCC Bridge Rectifier Diode, 1 Phase, 20A, 1000V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC, GBJ, 类似代替

GBJ2010 相关器件

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GBJ2010(LS) DIODES 20A GLASS PASSIVATED BRIDGE RECTIFIER 获取价格
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GBJ2010-F DIODES 20A GLASS PASSIVATED BRIDGE RECTIFIER 获取价格
GBJ2010A DYELEC SINGLE PHASE 20AMP GLASS PASSIVATED BRIDGE RECTIFIER 获取价格
GBJ2010A YANGJIE Bridge Rectifiers 获取价格
GBJ2010G DYELEC SINGLE PHASE 20AMP GLASS PASSIVATED BRIDGE RECTIFIER 获取价格
GBJ2010S MCC 获取价格
GBJ2010T DYELEC SINGLE PHASE 20AMP GLASS PASSIVATED BRIDGE RECTIFIER 获取价格
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