GBJ2504 [DIODES]
25A GLASS PASSIVATED BRIDGE RECTIFIER; 25A玻璃钝化整流桥
| 型号： | GBJ2504 |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | 25A GLASS PASSIVATED BRIDGE RECTIFIER |
| 文件： | 总2页 (文件大小：57K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
GBJ25005 - GBJ2510
25A GLASS PASSIVATED BRIDGE RECTIFIER
Features
·
·
·
·
·
·
Glass Passivated Die Construction
High Case Dielectric Strength of 1500V
GBJ
RMS
Dim
A
B
C
D
E
Min
29.70
19.70
17.00
3.80
7.30
9.80
2.00
0.90
2.30
Max
30.30
20.30
18.00
4.20
Low Reverse Leakage Current
Surge Overload Rating to 350A Peak
Ideal for Printed Circuit Board Applications
L
Plastic Material - UL Flammability
Classification 94V-0
A
M
K
·
UL Listed Under Recognized Component
Index, File Number E94661
7.70
B
D
G
H
I
10.20
2.40
S
N
_
J
1.10
Mechanical Data
P
J
2.70
H
I
C
·
·
Case: Molded Plastic
K
L
3.0 X 45°
R
Terminals: Plated Leads, Solderable per
MIL-STD-202, Method 208
4.40
3.40
3.10
2.50
0.60
10.80
4.80
3.80
3.40
2.90
0.80
11.20
M
N
P
·
·
·
·
·
Polarity: Molded on Body
Mounting: Through Hole for #6 Screw
Mounting Torque: 5.0 in-lbs Maximum
Weight: 6.6 grams (approx)
G
E
E
R
S
Marking: Type Number
All Dimensions in mm
Maximum Ratings and Electrical Characteristics@ T = 25°C unless otherwise specified
A
Single phase, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
GBJ GBJ
25005 2501
GBJ
2502
GBJ
2504
GBJ
2506
GBJ
2508
GBJ
2510
Characteristic
Symbol
Unit
VRRM
VRWM
VR
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
50
35
100
70
200
140
400
600
420
800
560
1000
700
V
VR(RMS)
IO
RMS Reverse Voltage
280
25
V
A
Average Forward Rectified Output Current
(Note 1)
@ TC = 100°C
Non-Repetitive Peak Forward Surge Current 8.3 ms
single half sine-wave superimposed on rated load
(JEDEC Method)
IFSM
350
A
Forward Voltage (per element)
@ IF = 12.5A
VFM
IR
1.05
V
Peak Reverse Current
at Rated DC Blocking Voltage
@TC = 25°C
@ TC = 125°C
10
500
µA
I2t Rating for Fusing (t < 8.3ms) (Note 1)
I2t
Cj
510
85
A2s
pF
Typical Junction Capacitance (per element) (Note 2)
Typical Thermal Resistance Junction to Case (Note 3)
Operating and Storage Temperature Range
RqJC
Tj, TSTG
0.6
°C/W
°C
-65 to +150
Notes:
1. Non-repetitive, for t > 1ms and < 8.3 ms.
2. Measured at 1.0 MHz and applied reverse voltage of 4.0V DC.
3. Thermal resistance from junction to case per element. Unit mounted on 220 x 220 x 1.6mm aluminum plate heat sink.
DS21221 Rev. D-2
1 of 2
GBJ25005-GBJ2510
30
100
10
Tj = 25°C
with heatsink
25
20
15
1.0
10
5
0.1
without heatsink
Resistive or
Inductive load
0
Pulse width = 300µs
0.01
25
50
75
100
125
150
0
0.4
0.8
1.2
1.6
2.0
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Typical Forward Characteristics (per element)
TC, CASE TEMPERATURE (°C)
Fig. 1 Forward Current Derating Curve
1000
Single half-sine-wave
(JEDEC method)
TJ = 25°C
f = 1MHz
400
Tj = 25°C
300
200
100
10
100
0
1
1
100
10
1.0
10
100
VR, REVERSE VOLTAGE (V)
NUMBER OF CYCLES AT 60 Hz
Fig. 3 Maximum Non-Repetitive Surge Current
Fig. 4 Typical Junction Capacitance
1000
Tj = 150°C
Tj = 125°C
100
Tj = 100°C
10
1.0
Tj = 25°C
0.1
0
20
40
60
80
100
120
140
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
Fig. 5 Typical Reverse Characteristics
DS21221 Rev. D-2
2 of 2
GBJ25005-GBJ2510
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