GBU602 [DIODES]

6.0A GLASS PASSIVATED BRIDGE RECTIFIER; 6.0A玻璃钝化整流桥
GBU602
型号: GBU602
厂家: DIODES INCORPORATED    DIODES INCORPORATED
描述:

6.0A GLASS PASSIVATED BRIDGE RECTIFIER
6.0A玻璃钝化整流桥

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中文:  中文翻译
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GBU6005 - GBU610  
6.0A GLASS PASSIVATED BRIDGE RECTIFIER  
Features  
·
·
·
·
·
·
Glass Passivated Die Construction  
High Case Dielectric Strength of 1500VRMS  
Low Reverse Leakage Current  
GBU  
Surge Overload Rating to 175A Peak  
Ideal for Printed Circuit Board Applications  
DimMin  
Max  
21.8  
A
B
C
D
E
G
H
J
22.3  
4.1  
A
B
K
Plastic Material: UL Flammability  
Classification Rating 94V-0  
M
3.5  
7.4  
7.9  
C
·
UL Listed Under Recognized Component  
Index, File Number E94661  
1.65  
2.25  
1.02  
4.83  
17.5  
2.16  
2.75  
1.27  
5.33  
18.0  
L
J
D
+
~ ~  
Mechanical Data  
-
E
·
·
Case: Molded Plastic  
F
Terminals: Plated Leads Solderable per  
MIL-STD-202, Method 208  
N
K
L
3.2 X 45°  
G
18.3  
3.30  
0.46  
0.76  
18.8  
3.56  
0.56  
1.0  
·
·
·
·
·
Polarity: Marked on Body  
M
N
P
Mounting: Through Hole for #6 Screw  
Mounting Torque: 5.0 Inch-pounds Maximum  
Marking: Date Code and Type Number  
Weight: 6.6 grams (approx.)  
P
H
All Dimensions in mm  
@ TA = 25°C unless otherwise specified  
Maximum Ratings and Electrical Characteristics  
Single phase, 60Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
GBU  
6005  
GBU  
601  
GBU  
602  
GBU  
604  
GBU  
606  
GBU  
608  
GBU  
610  
Characteristic  
Symbol  
Unit  
VRRM  
VRWM  
VR  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
50  
100  
70  
200  
140  
400  
600  
420  
800  
560  
1000  
700  
V
VR(RMS)  
IO  
RMS Reverse Voltage  
35  
280  
6.0  
V
A
Average Rectified Output Current (Note 1) @ TC = 100°C  
Non-Repetitive Peak Forward Surge Current 8.3ms  
single half sine-wave superimposed on rated load  
(JEDEC Method)  
IFSM  
175  
1.0  
A
Forward Voltage (per element)  
@ IF = 3.0A  
VFM  
IR  
V
Peak Reverse Current  
at Rated DC Blocking Voltage  
@TC = 25°C  
@ TC = 125°C  
5.0  
500  
mA  
I2t Rating for Fusing (t < 8.3ms) (Note 2)  
I2t  
CJ  
127  
100  
A2s  
pF  
Typical Junction Capacitance per Element (Note 3)  
Typical Thermal Resistance Junction to Case (Note 1)  
Operating and Storage Temperature Range  
RqJC  
Tj, TSTG  
2.2  
°C/W  
°C  
-55 to +150  
Notes:  
1. Unit mounted on 50mm x 50mm x 1.6mm copper plate heatsink.  
2. Non-repetitive, for t > 1.0ms and < 8.3ms.  
3. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.  
DS21226 Rev. D-2  
1 of 2  
GBU6005-GBU610  
6
5
4
100  
With heatsink  
T = 25°C  
j
10  
3
Without heatsink  
2
1
0
1.0  
0.1  
Pulse width = 300µs  
Resistive or  
Inductive load  
0
25  
50  
75  
100  
125  
150  
0.0 0.2  
0.6  
1.0  
1.4  
1.8  
TC, CASE TEMPERATURE (°C)  
Fig. 1 Forward Current Derating Curve  
VF, INSTANTANEOUS FORWARD VOLTAGE (V)  
Fig. 2 Typical Forward Characteristics  
180  
160  
100  
10  
1
Tj = 25°C  
f = 1.0MHz  
Single half-sine-wave  
(JEDEC method)  
Tj = 25°C  
120  
80  
40  
0
1
100  
10  
1
10  
100  
VR, REVERSE VOLTAGE (V)  
NUMBER OF CYCLES AT 60 Hz  
Fig. 3 Maximum Non-Repetitive Surge Current  
Fig. 4 Typical Junction Capacitance  
DS21226 Rev. D-2  
2 of 2  
GBU6005-GBU610  

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