GBU801 [DIODES]
8.0A GLASS PASSIVATED BRIDGE RECTIFIER; 8.0A玻璃钝化整流桥
| 型号： | GBU801 |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | 8.0A GLASS PASSIVATED BRIDGE RECTIFIER |
| 文件： | 总2页 (文件大小：70K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
GBU8005 - GBU810
8.0A GLASS PASSIVATED BRIDGE RECTIFIER
Features
·
·
·
·
·
·
Glass Passivated Die Construction
High Case Dielectric Strength of 1500VRMS
Low Reverse Leakage Current
GBU
Surge Overload Rating to 200A Peak
Ideal for Printed Circuit Board Applications
DimMin
Max
21.8
A
B
C
D
E
G
H
J
22.3
4.1
A
B
K
Plastic Material: UL Flammability
Classification Rating 94V-0
M
3.5
7.4
7.9
C
·
UL Listed Under Recognized Component
Index, File Number E94661
1.65
2.25
1.02
4.83
17.5
2.16
2.75
1.27
5.33
18.0
L
J
D
+
~ ~
-
Mechanical Data
E
F
·
·
Case: Molded Plastic
Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
N
K
L
3.2 X 45°
G
18.3
3.30
0.46
0.76
18.8
3.56
0.56
1.0
·
·
·
·
·
Polarity: Marked on Body
M
N
P
P
Mounting: Through Hole for #6 Screw
Mounting Torque: 5.0 Inch-pounds Maximum
Marking: Date Code and Type Number
Weight: 6.6 grams (approx.)
H
All Dimensions in mm
@ TA = 25°C unless otherwise specified
Maximum Ratings and Electrical Characteristics
Single phase, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
GBU
8005
GBU
801
GBU
802
GBU
804
GBU
806
GBU
808
GBU
810
Characteristic
Symbol
Unit
VRRM
VRWM
VR
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
50
100
70
200
140
400
600
420
800
560
1000
700
V
VR(RMS)
IO
RMS Reverse Voltage
35
280
8.0
V
A
Average Rectified Output Current (Note 1) @ TC = 100°C
Non-Repetitive Peak Forward Surge Current 8.3ms
single half sine-wave superimposed on rated load
(JEDEC Method)
IFSM
200
1.0
A
Forward Voltage (per element)
@ IF = 4.0A
VFM
IR
V
Peak Reverse Current
at Rated DC Blocking Voltage
@TC = 25°C
@ TC = 125°C
5.0
500
mA
I2t Rating for Fusing (t < 8.3ms) (Note 2)
I2t
CJ
166
130
A2s
pF
Typical Junction Capacitance per Element (Note 3)
Typical Thermal Resistance Junction to Case (Note 1)
Operating and Storage Temperature Range
RqJC
Tj, TSTG
2.2
°C/W
°C
-55 to +150
Notes:
1. United mounted on 50 x 50 x 1.6mm copper plate heatsink.
2. Non-repetitive, for t > 1.0ms and < 8.3ms.
3. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
DS21227 Rev. D-2
1 of 2
GBU8005-GBU810
10
8
100
Resistive or
Inductive Load
With heatsink
T = 25°C
j
10
6
4
1.0
0.1
Without heatsink
2
0
Pulse width = 300µs
0.0 0.2
0.6
1.0
0
50
100
150
1.4
1.8
TC, CASE TEMPERATURE (°C)
Fig. 1 Forward Current Derating Curve
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Typical Forward Characteristics
250
200
1000
100
10
Tj = 25°C
f = 1.0MHz
Single Half-Sine Wave
(JEDEC Method)
100
Tj = 25°C
0
1
10
100
0.1
1.0
10
100
VR, REVERSE VOLTAGE (V)
NUMBER OF CYCLES AT 60 Hz
Fig. 3 Maximum Non-Repetitive Surge Current
Fig. 4 Typical Junction Capacitance
DS21227 Rev. D-2
2 of 2
GBU8005-GBU810
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