LL46 [DIODES]
SURFACE MOUNT SCHOTTKY BARRIER DIODE; 表面贴装肖特基二极管
| 型号： | LL46 |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | SURFACE MOUNT SCHOTTKY BARRIER DIODE |
| 文件： | 总1页 (文件大小：53K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
LL46
SURFACE MOUNT SCHOTTKY BARRIER DIODE
Features
·
·
·
High Reverse Breakdown Voltage
Low Turn-On Voltage
Guard Ring Construction for Transient
Protection
C
B
A
Mechanical Data
MiniMELF
·
Case: MiniMELF, Glass
·
Terminals: Solderable per MIL-STD-202,
Dim
A
Min
3.30
1.30
0.28
Max
3.70
1.60
0.50
Method 208
·
·
·
Marking: Cathode Band Only
Polarity: Cathode Band
Weight: 0.05 grams (approx.)
B
C
All Dimensions in mm
@ TA = 25°C unless otherwise specified
Maximum Ratings
Characteristic
Symbol
LL46
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
V
100
IFM
IO
mA
mA
mA
mA
mW
K/W
°C
Forward Continuous Current (Note 1)
Average Rectified Output Current (Note 1)
Repetitive Peak Forward Current (Note 1)
150
75
IFRM
IFSM
Pd
@ t £ 1.0s
350
Non-Repetitive Peak Forward Surge Current @ t = 10ms
Power Dissipation (Note 1)
750
200
RqJA
Tj, TSTG
Thermal Resistance, Junction to Ambient Air (Note 1)
Operating and Storage Temperature Range
500
-55 to +125
@ TA = 25°C unless otherwise specified
Electrical Characteristics
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
IRS = 10mA (pulses)
VR = 1.5V
V(BR)R
Reverse Breakdown Voltage
100
¾
¾
V
0.5
5.0
0.8
7.5
2.0
15
V
V
V
V
V
V
V
R = 1.5V, Tj = 60°C
R = 10V
R = 10V, Tj = 60°C
R = 50V
R = 50V, Tj = 60°C
R = 75V
R = 75V, Tj = 60°C
IR
Reverse Leakage Current (Note 2)
¾
¾
mA
5.0
20
IF = 0.1mA
IF = 10mA
IF = 250mA
0.25
0.45
1.00
VF
Cj
Forward Voltage Drop (Note 2)
Junction Capacitance
¾
¾
¾
V
VR = 0V, f = 1.0MHz
10
6.0
¾
pF
V
R = 1.0V, f = 1.0MHz
Notes:
1. Valid provided that electrodes are kept at ambient temperature.
2. t < 300ms, Duty Cycle < 2%.
DS30074 Rev. A-2
1 of 1
LL46
相关型号：
LL46-13
Rectifier Diode, Schottky, 1 Element, 0.075A, 100V V(RRM), Silicon, GLASS, MINIMELF-2
DIODES
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