MBR10100CT [DIODES]
10A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER; 10A高压肖特基整流器
| 型号： | MBR10100CT |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | 10A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER |
| 文件： | 总2页 (文件大小：67K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MBR1070CT - MBR10100CT
10A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER
Features
·
·
Schottky Barrier Chip
Guard Ring Die Construction for
Transient Protection
TO-220AB
·
·
·
Low Power Loss, High Efficiency
High Surge Capability
High Current Capability and Low Forward
Voltage Drop
For Use in Low Voltage, High Frequency
Inverters, Free Wheeling, and Polarity
Protection Applications
Plastic Material: UL Flammability
Classification Rating 94V-0
L
Dim
A
B
C
D
E
Min
14.22
9.65
2.54
5.84
¾
Max
15.88
10.67
3.43
B
M
C
D
E
·
·
K
A
6.86
6.35
1
2
3
G
H
J
12.70
2.29
0.51
14.73
2.79
G
J
N
1.14
Mechanical Data
·
·
K
L
3.53Æ 4.09Æ
Case: Molded Plastic
Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
Polarity: As Marked on Body
Weight: 2.24 grams (approx)
Mounting Position: Any
3.56
1.14
0.30
2.03
4.83
1.40
0.64
2.92
H H
P
M
N
P
Pin 1
Pin 2
Pin 3
·
·
·
·
Case
All Dimensions in mm
Marking: Type Number
@ TA = 25°C unless otherwise specified
Maximum Ratings and Electrical Characteristics
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
MBR
1070CT
MBR
1080CT
MBR
1090CT
MBR
10100CT
Characteristic
Symbol
Unit
VRRM
VRWM
VR
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
70
49
80
56
90
63
100
70
V
VR(RMS)
IO
RMS Reverse Voltage
V
A
Average Rectified Output Current
(Note 1)
10
@ TC = 100°C
Non-Repetitive Peak Forward Surge Current
8.3ms single half sine-wave superimposed on rated load
(JEDEC Method)
IFSM
120
A
Forward Voltage Drop
@ IF = 5.0A, TC
@ IF = 5.0A, TC
@ IF = 10A, TC
@ IF = 10A, TC
=
=
=
=
125°C
25°C
125°C
25°C
0.75
0.85
0.85
0.95
VFM
V
Peak Reverse Current
at Rated DC Blocking Voltage
@ TC
=
25°C
0.1
50
IRM
mA
@ TC = 125°C
Cj
Typical Junction Capacitance (Note 2)
300
3.0
pF
K/W
V/ms
°C
RqJC
Typical Thermal Resistance Junction to Case (Note 1)
Voltage Rate of Change
dV/dt
Tj, TSTG
10,000
Operating and Storage Temperature Range
-65 to +150
Notes:
1. Thermal resistance junction to case mounted on heatsink.
2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
DS30028 Rev. A-2
1 of 2
MBR1070CT-MBR10100CT
10
100
8
6
10
1.0
0.1
4
2
0
Tj - 25°C
IF Pulse Width = 300µs
2% Duty Cycle
0
0.2
0.4
0.6
0.8
1.0
0
50
100
150
TC, CASE TEMPERATURE (°C)
Fig. 1 Forward Current Derating Curve
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Typical Forward Characteristics
300
250
200
150
4000
Tj = 25°C
f = 1.0MHz
1000
100
50
0
100
0.1
1.0
10
100
1
10
100
VR, REVERSE VOLTAGE (V)
NUMBER OF CYCLES AT 60Hz
Fig. 3 Max Non-Repetitive Surge Current
Fig. 4 Typical Junction Capacitance
DS30028 Rev. A-2
2 of 2
MBR1070CT-MBR10100CT
相关型号：
MBR10100CT-G
Rectifier Diode, Schottky, 1 Phase, 2 Element, 5A, Silicon, TO-220AB, GREEN, PLASTIC PACKAGE-3
SENSITRON
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