MBR1030 [DIODES]
10A SCHOTTKY BARRIER RECTIFIER; 10A肖特基整流器
| 型号： | MBR1030 |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | 10A SCHOTTKY BARRIER RECTIFIER |
| 文件： | 总2页 (文件大小：58K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MBR1030 - MBR1060
10A SCHOTTKY BARRIER RECTIFIER
Features
·
·
Schottky Barrier Chip
Guard Ring Die Construction for
Transient Protection
TO-220AC
·
·
·
Low Power Loss, High Efficiency
High Surge Capability
L
Dim
A
B
C
D
E
Min
14.22
9.65
2.54
5.84
¾
Max
15.88
10.67
3.43
B
M
High Current Capability and Low Forward
Voltage Drop
C
D
E
·
·
For Use in Low Voltage, High Frequency
Inverters, Free Wheeling, and Polarity
Protection Application
K
6.86
A
6.35
Plastic Material: UL Flammability
Classification Rating 94V-0
Pin 1
Pin 2
G
J
12.70
0.51
14.73
1.14
K
L
3.53Æ 4.09Æ
G
Mechanical Data
J
N
3.56
1.14
0.30
2.03
4.83
4.83
1.40
0.64
2.92
5.33
M
N
P
·
·
Case: Molded Plastic
R
Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
P
+
Pin 1 +
Pin 2 -
·
·
·
·
Polarity: See Diagram
R
Case
Weight: 2.24 grams (approx.)
Mounting Position: Any
Marking: Type Number
All Dimensions in mm
@ TA = 25°C unless otherwise specified
Maximum Ratings and Electrical Characteristics
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
MBR
1030
MBR
1035
MBR
1040
MBR
1045
MBR
1050
MBR
1060
Characteristic
Symbol
Unit
VRRM
VRWM
VR
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
30
21
35
40
28
45
50
35
60
42
V
VR(RMS)
IO
RMS Reverse Voltage
24.5
31.5
V
A
Average Rectified Output Current
(Note 1)
10
@TC = 125°C
Non-Repetitive Peak Forward Surge Current 8.3ms
single half sine-wave superimposed on rated load
(JEDEC Method)
IFSM
150
A
Forward Voltage Drop
@IF = 10A, TC = 25°C
@IF = 10A, TC = 125°C
0.84
0.57
0.95
0.70
VFM
IRM
V
Peak Reverse Current
at Rated DC Blocking Voltage
@TC = 25°C
@TC = 125°C
0.1
15
0.1
25
mA
Cj
Typical Junction Capacitance (Note 2)
400
2.5
pF
°C/W
V/ms
°C
RqJc
Typical Thermal Resistance Junction to Case (Note 1)
Voltage Rate of Change (RatedVR)
dV/dt
Tj, TSTG
1000
Operating and Storage Temperature Range
-65 to +150
Notes:
1. Thermal resistance junction to case mounted on heatsink.
2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
DS23009 Rev. G-2
1 of 2
MBR1030-MBR1060
50
10
10
MBR1030 - MBR1045
8
6
MBR1050 / MBR1060
4
1.0
0.1
2
0
Tj = 25°C
Pulse width = 300µs
2% duty cycle
0
50
100
150
0.2
0.4
0.6
0.8
1.0
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Typical Forward Characteristics
TC, CASE TEMPERATURE (°C)
Fig. 1 Forward Current Derating Curve
300
250
200
150
1000
Tj = 25°C
f = 1.0MHz
100
50
0
100
0.1
1.0
10
100
1
10
100
VR, REVERSE VOLTAGE (V)
NUMBER OF CYCLES AT 60Hz
Fig. 3 Max Non-Repetitive Surge Current
Fig. 4 Typical Junction Capacitance
10
1.0
0.1
Tj = 125°C
Tj = 75°C
Tj = 25°C
0.01
0.001
0
40
60
80
100
120 140
20
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
Fig. 5 Typical Reverse Characteristics
DS23009 Rev. G-2
2 of 2
MBR1030-MBR1060
相关型号：
MBR1030-BP-HF
Rectifier Diode, Schottky, 1 Phase, 1 Element, 10A, 30V V(RRM), Silicon, TO-220AC,
MCC
MBR1030CT
肖特基势垒二极管Schottky Barrier Diodes，高结温低漏电流肖特基势垒二极管High Tjm Low IRRM Schottky Barrier Diodes，Tj = -65°C ~ 175°C, Tjm = 175°C。
SIRECTIFIER
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