MBR1640 [DIODES]
16A SCHOTTKY BARRIER RECTIFIER; 16A肖特基整流器
| 型号： | MBR1640 |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | 16A SCHOTTKY BARRIER RECTIFIER |
| 文件： | 总3页 (文件大小：76K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MBR1630 - MBR1660
16A SCHOTTKY BARRIER RECTIFIER
Features
·
·
Schottky Barrier Chip
Guard Ring Die Construction for
Transient Protection
TO-220AC
·
·
·
·
Low Power Loss, High Efficiency
Dim
A
B
C
D
E
Min
14.48
10.00
2.54
5.90
2.80
12.70
0.69
3.54
4.07
1.15
0.30
2.04
4.83
Max
15.75
10.40
3.43
6.40
3.93
14.27
0.93
3.78
4.82
1.39
0.50
2.79
5.33
L
High Surge Capability
B
M
High Current Capability and Low Forward Voltage Drop
For Use in Low Voltage, High Frequency Inverters, Free
Wheeling, and Polarity Protection Applications
C
D
E
K
·
Lead Free Finish, RoHS Compliant (Note 3)
A
Pin 1
Pin 2
G
J
Mechanical Data
·
·
Case: TO-220AC
K
L
G
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
J
N
M
N
P
·
·
Moisture Sensitivity: Level 1 per J-STD-020C
R
Terminals: Finish – Bright Tin. Solderable per
MIL-STD-202, Method 208
P
Pin 1
Pin 2
·
·
·
Polarity: See Diagram
Case
R
Marking: Type Number
Weight: 2.24 grams (approx.)
All Dimensions in mm
@ TA = 25°C unless otherwise specified
Maximum Ratings and Electrical Characteristics
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
MBR
1630
MBR
1635
MBR
1640
MBR
1645
MBR
1650
MBR
1660
Characteristic
Symbol
Unit
VRRM
VRWM
VR
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
30
21
35
40
28
45
50
35
60
42
V
VR(RMS)
IO
RMS Reverse Voltage
24.5
31.5
V
A
Average Rectified Output Current
(Note 1)
16
@ TC = 125°C
Non-Repetitive Peak Forward Surge Current 8.3ms
single half sine-wave superimposed on rated load
(JEDEC Method)
IFSM
150
A
Forward Voltage Drop
@ IF =16A, TC = 25°C
@IF =16A, TC = 125°C
0.63
0.57
0.75
0.65
VFM
IRM
V
Peak Reverse Current
at Rated DC Blocking Voltage
@TC 25°C
=
0.2
40
1.0
50
mA
@ TC = 125°C
CT
RqJc
Typical Total Capacitance (Note 2)
450
pF
°C/W
V/ms
°C
Typical Thermal Resistance Junction to Case (Note 1)
Voltage Rate of Change (Rated VR)
1.5
3
dV/dt
Tj, TSTG
1000
10,000
Operating and Storage Temperature Range
-65 to +150
Notes:
1.Thermal resistance junction to case mounted on heatsink.
2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
3. RoHS revision 13.2.2003. Glass and High Temperature Solder Exemptions Applied, see EU Directive Annex Notes 5 and 7.
DS23011 Rev. 8 - 2
1 of 3
MBR1630-MBR1660
www.diodes.com
ã Diodes Incorporated
50
10
20
16
12
MBR1630 - MBR1645
MBR1650 / MBR1660
8
1.0
0.1
4
0
0.2
0.4
0.6
0.8
1.0
0
50
100
150
TC, CASE TEMPERATURE (°C)
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Typical Forward Voltage Characteristics
Fig. 1 Forward Current Derating Curve
4000
300
Tj = 25°C
f = 1.0MHz
250
200
150
1000
100
50
0
100
0.1
1.0
10
100
1
10
100
VR, REVERSE VOLTAGE (V)
NUMBER OF CYCLES AT 60Hz
Fig. 3 Max Non-Repetitive Surge Current
Fig. 4 Typical Total Capacitance
100
10
Tj = 125°C
Tj = 75°C
1.0
0.1
Tj = 25°C
0.01
0
20
40
60
80
100
120 140
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
Fig. 5 Typical Reverse Characteristics
DS23011 Rev. 8 - 2
2 of 3
MBR1630-MBR1660
www.diodes.com
Ordering Information (Note 4)
Device
Packaging
Shipping
MBR16xx*
TO-220AC
50/Tube
* xx = Device type, e.g. MBR1645
Notes:
4. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
DS23011 Rev. 8 - 2
3 of 3
www.diodes.com
MBR1630-MBR1660
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