MBR2045CT [DIODES]
20A SCHOTTKY BARRIER RECTIFIER; 20A肖特基整流器
| 型号： | MBR2045CT |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | 20A SCHOTTKY BARRIER RECTIFIER |
| 文件： | 总2页 (文件大小：69K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MBR2030CT - MBR2060CT
20A SCHOTTKY BARRIER RECTIFIER
Features
·
·
Schottky Barrier Chip
Guard Ring Die Construction for
Transient Protection
TO-220AB
·
·
·
Low Power Loss, High Efficiency
High Surge Capability
High Current Capability and Low Forward
Voltage Drop
For Use in Low Voltage, High Frequency
Inverters, Free Wheeling, and Polarity
Protection Applications
Plastic Material: UL Flammability
Classification Rating 94V-0
L
Dim
A
B
C
D
E
Min
14.22
9.65
2.54
5.84
¾
Max
15.88
10.67
3.43
B
M
C
D
E
·
·
K
A
6.86
6.35
1
2
3
G
H
J
12.70
2.29
0.51
14.73
2.79
G
1.14
J
N
Mechanical Data
K
L
3.53Æ 4.09Æ
·
·
Case: Molded Plastic
Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
Polarity: As Marked on Body
Marking: Type Number
Weight: 2.24 grams (approx)
Mounting Position: Any
3.56
1.14
0.30
2.03
4.83
1.40
0.64
2.92
H
H
P
M
N
P
Pin 1 +
Pin 2 -
Pin 3 +
+
·
·
·
·
Case
All Dimensions in mm
@ TA = 25°C unless otherwise specified
Maximum Ratings and Electrical Characteristics
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
MBR
MBR
MBR
MBR
MBR
MBR
Characteristic
Symbol
Unit
2030CT 2035CT 2040CT 2045CT 2050CT 2060CT
VRRM
VRWM
VR
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
30
21
35
40
28
45
50
35
60
42
V
VR(RMS)
IO
RMS Reverse Voltage
24.5
31.5
V
A
Average Rectified Output Current
@ TC = 125°C
20
(Note 1)
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on rated load
(JEDEC Method)
IFSM
150
A
Forward Voltage Drop (Note 3) @ IF = 20A, TC
= 25°C
0.84
0.72
0.57
0.95
0.85
0.70
VFM
@ IF = 20A, TC = 125°C
@ IF = 10A, TC = 125°C
V
Peak Reverse Current
at Rated DC Blocking Voltage
@ TC = 25°C
@ TC = 125°C
0.1
15
IRM
mA
Cj
Typical Junction Capacitance
(Note 2)
650
2.0
pF
°C/W
V/ms
°C
RqJc
Typical Thermal Resistance Junction to Case
Voltage Rate of Change (Rated VR)
(Note 1)
dV/dt
Tj, TSTG
1000
10,000
Operating and Storage Temperature Range
-65 to +150
Notes:
1. Thermal resistance junction to case mounted on heatsink.
2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
3. Pulse width £300 ms, duty cycle £2%.
DS23016 Rev. G-2
1 of 2
MBR2030CT-MBR2060CT
20
16
12
50
10
MBR 2030CT - MBR 2045CT
MBR 2050CT - MBR 2060CT
8
4
1.0
Tj = 25°C
Pulse width = 300µs
2% duty cycle
0
0.1
0
50
100
150
0.2
0.4
0.6
0.8
1.0
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Typical Forward Characteristics
TC, CASE TEMPERATURE (°C)
Fig. 1 Forward Current Derating Curve
300
250
200
150
4000
1000
100
50
0
100
0.1
1.0
10
100
100
1
10
VR, REVERSE VOLTAGE (V)
NUMBER OF CYCLES AT 60Hz
Fig. 3 Max Non-Repetitive Surge Current
Fig. 4 Typical Junction Capacitance
100
TC = 125°C
10
1.0
TC = 75°C
0.1
TC = 25°C
0.01
0
20
40
60
80
100
120 140
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
Fig. 5 Typical Reverse Characteristics
DS23016 Rev. G-2
2 of 2
MBR2030CT - MBR2060CT
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